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Sreehari Nimmala

from Acworth, GA
Age ~65

Sreehari Nimmala Phones & Addresses

  • 617 Oakside Pl, Acworth, GA 30102
  • 9901 N Oracle Rd #8106, Tucson, AZ 85704 (770) 577-9595
  • 2538 Mystic Mountain Dr, Tucson, AZ 85742 (520) 498-0564 (520) 906-4521
  • 9901 Oracle Rd, Oro Valley, AZ 85737 (520) 297-9138 (520) 498-0464
  • Marietta, GA
  • Sahuarita, AZ
  • 2385 River Place Xing, Douglasville, GA 30135 (770) 577-9595 (770) 287-1948
  • Houston, TX
  • Dunwoody, GA

Resumes

Resumes

Sreehari Nimmala Photo 1

Lead Development Chemist At Climax Engineered Materials

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Position:
Lead Development Chemist at Climax Engineered Materials
Location:
Tucson, Arizona Area
Industry:
Chemicals
Work:
Climax Engineered Materials
Lead Development Chemist
Sreehari Nimmala Photo 2

Research Scientist At Nimmala's Consulting, Inc.

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Position:
Research Scientist at Nimmala's Consulting, Inc.
Location:
Greater Atlanta Area
Industry:
Chemicals
Work:
Nimmala's Consulting, Inc.
Research Scientist
Education:
Georgia State University 1991 - 1995

Publications

Us Patents

Polishing Slurries And Methods For Chemical Mechanical Polishing

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US Patent:
7553430, Jun 30, 2009
Filed:
Sep 29, 2006
Appl. No.:
11/540297
Inventors:
Sunil Chandra - Oro Valley AZ, US
Sreehari Nimmala - Oro Valley AZ, US
Suryadevara Vijayakumar Babu - Potsdam NY, US
Udaya B. Patri - Potsdam NY, US
Sharath Hedge - Potsdam NY, US
Youngki Hong - Potsdam NY, US
Assignee:
Climax Engineered Materials, LLC - Phoenix AZ
International Classification:
C09K 13/00
US Classification:
252 791, 252 792, 252 793, 252 794, 252 62, 216 41, 216 57, 216 88, 438691, 438692, 438687
Abstract:
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoOdissolved in an oxidizing agent, and particles of MoOdissolved in an oxidizing agent.

Polishing Slurries And Methods For Chemical Mechanical Polishing

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US Patent:
20050211953, Sep 29, 2005
Filed:
Jan 11, 2005
Appl. No.:
11/032717
Inventors:
Sunil Jha - Oro Valley AZ, US
Sreehari Nimmala - Oro Valley AZ, US
Sharath Hegde - Potsdam NY, US
Youngki Hong - Potsdam NY, US
Udaya Patri - Potsdam NY, US
International Classification:
C09K013/00
C23F001/00
US Classification:
252079100, 252079500, 216088000, 216100000
Abstract:
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoOdissolved in an oxidizing agent, and particles of MoOdissolved in an oxidizing agent.

Polishing Slurries And Methods For Chemical Mechanical Polishing

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US Patent:
20070043230, Feb 22, 2007
Filed:
Sep 26, 2006
Appl. No.:
11/527429
Inventors:
Sunil Jha - Oro Valley AZ, US
Sreehari Nimmala - Oro Valley AZ, US
Sharath Hegde - Potsdam NY, US
Youngki Hong - Potsdam NY, US
Udaya Patri - Potsdam NY, US
International Classification:
C07F 11/00
US Classification:
556057000
Abstract:
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoOdissolved in an oxidizing agent, and particles of MoOdissolved in an oxidizing agent.

Polishing Slurries For Chemical-Mechanical Polishing

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US Patent:
20090224200, Sep 10, 2009
Filed:
May 20, 2009
Appl. No.:
12/469193
Inventors:
Sunil Chandra Jha - Oro Valley AZ, US
Sreehari Nimmala - Oro Valley AZ, US
Sharath Hedge - Potsdam NY, US
Youngki Hong - Potsdam NY, US
Suryadevara Vijayakumar Babu - Potsdam NY, US
Udaya B. Patri - Potsdam NY, US
Assignee:
Climax Engineered Materials, LLC - Phoenix AZ
International Classification:
C09K 13/00
C09K 13/04
US Classification:
252 792, 252 791
Abstract:
The aqueous slurries according to the present invention include soluble salts of molybdenum dissolved in an oxidizing agent and deionized water. Other aqueous polishing slurries include dissolved and undissolved nanoparticles of MoOin a solution of deionized water and an oxidizing agent.
Sreehari Nimmala from Acworth, GA, age ~65 Get Report