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Arun Majumdar

from Palo Alto, CA
Deceased
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Related to:
Windyjoy S Majumdar, 62
Connected to:
Amit Majumdar, 54Amitabha Majumdar, 47Amith K Majumdar, 51Arun Majumdar, 61Atreyi Majumdar, 41Bipasha Majumdar, 48Debabrata Majumdar, 43Debraj Majumdar, 48Gautam Majumdar, 76Kingshuk Majumdar, 56

Arun Majumdar Phones & Addresses

  • Palo Alto, CA
  • Alexandria, VA

Resumes

Resumes

Arun Majumdar Photo 1

Technical Leadership

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Location:
Palo Alto, CA
Industry:
Information Technology And Services
Work:
Sdlt
Chief Technology Officer and Chairman
Creative Destruction Lab
Technical Leadership
Sdlt.ai & Kyndi.com
Founder, Chariman and Chief Technology Officer Sdlt.ai and Also Founder and Chairman, Kyndi Inc
Sdlt Kyndi & Creative Destruction Lab
Founder, Chief Technology Officer and Chairman Sdlt and Kyndi, Technical Leadership Creative Destruction Lab
Kyndi
Founder
Education:
Mcgill University 1983 - 1986
Bachelors, Bachelor of Science, Biochemistry, Computer Science, Film, Communications Dawson College 1982 - 1983
Associates, Applied Science Loyola High School, Montreal, Canada 1979 - 1982
Skills:
Algorithms
Software Development
Software Engineering
Distributed Systems
Big Data
Artificial Intelligence
Soa
Business Intelligence
Enterprise Architecture
Integration
Uml
Analytics
Software Design
Enterprise Software
Service Oriented Architecture
Agile Methodologies
System Architecture
Cloud Computing
Databases
Perl
Architectures
Web Services
Unified Modeling Language
Saas
Architecture
Requirements Analysis
Scrum
Solution Architecture
Software Solution Architecture
Logic Programming
Oop
Web Applications
Linguistic Validation
Software Project Management
Intelligent Systems
Cuda
Interests:
Internet and Agent Technologies
Children
Cyber
Design
Economic Empowerment
Environment
Education
Algorithms
Science and Technology
Architecture
Arts and Culture
Health
Languages:
English
French
Arun Majumdar Photo 2

Application Architect At Freddie Mac

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Position:
Application Architect at Freddie Mac
Location:
Washington D.C. Metro Area
Industry:
Financial Services
Work:
Freddie Mac
Application Architect
Education:
Bengal Engineering and Science University, Shibpur 1989 - 1992
MCA, Computer Science

Business Records

Name / Title
Company / Classification
Phones & Addresses
Arun Majumdar
Associate Laboratory Director, Energy And Environm
Berkeley Lawrence Laboratory
Business Services at Non-Commercial Site · General Government
1 Cyclotron Rd, Berkeley, CA 94720
Arun Majumdar
Associate Laboratory Director, Energy And Environm
United States Dept of Energy
Administrative General Economic Programs · Research Laboratory
1 Cyclotron Rd, Berkeley, CA 94720
(510) 486-7600, (510) 486-4000
Arun Majumdar
Vivomind Research, LLC
Custom Computer Programing
600 E Jefferson St, Rockville, MD 20852
Arun Majumdar
President
KALINEX, INC
151 Ardith Dr, Orinda, CA 94563
Arun Majumdar
Capil LLC
Licensing or Intellectual Property
Dept Of Mechanical Engineering, Uc DEPT OF MECHANICAL ENGINEERING, UCB, Berkeley, CA 94720

Publications

Amazon

Advanced Free Space Optics (Fso): A Systems Approach (Springer Series In Optical Sciences)

Advanced Free Space Optics (FSO): A Systems Approach (Springer Series in Optical Sciences)

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This title provides a comprehensive, unified tutorial covering the most recent advances in the emerging technology of free-space optics (FSO), a field in which interest and attention continue to grow along with the number of new challenges. This book is intended as an all-inclusive source to serve t...
Author

Arun K. Majumdar

Binding

Hardcover

Pages

397

Publisher

Springer

ISBN #

1493909177

EAN Code

9781493909179

ISBN #

4

Advanced Free Space Optics (Fso): A Systems Approach (Springer Series In Optical Sciences)

Advanced Free Space Optics (FSO): A Systems Approach (Springer Series in Optical Sciences)

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This title provides a comprehensive, unified tutorial covering the most recent advances in the emerging technology of free-space optics (FSO), a field in which interest and attention continue to grow along with the number of new challenges. This book is intended as an all-inclusive source to serve t...
Author

Arun K. Majumdar

Binding

Paperback

Pages

397

Publisher

Springer

ISBN #

1493952749

EAN Code

9781493952748

ISBN #

3

Advanced Free Space Optics (Fso): A Systems Approach (Springer Series In Optical Sciences) By Arun K. Majumdar (2014-09-11)

Advanced Free Space Optics (FSO): A Systems Approach (Springer Series in Optical Sciences) by Arun K. Majumdar (2014-09-11)

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Author

Arun K. Majumdar

Binding

Hardcover

Publisher

Springer

ISBN #

10

Poverty, Development And Exchange Relations: A Study Of Two Birbhum Villages

Poverty, Development and Exchange Relations: A Study of Two Birbhum Villages

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Author

Arun Majumdar

Binding

Hardcover

Pages

141

Publisher

Stosius Inc/Advent Books Division

ISBN #

8170271088

EAN Code

9788170271086

ISBN #

9

Free-Space Laser Communications: Volume X: 2-3 August 2010, San Diego, California, United States

Free-space Laser Communications: Volume X: 2-3 August 2010, San Diego, California, United States

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Author

Arun Majumdar

Binding

Paperback

Pages

318

Publisher

SPIE Press

ISBN #

0819483109

EAN Code

9780819483102

ISBN #

7

Free-Space And Atmospheric Laser Communications Xi: 24-25 August 2011, San Diego, California, United States

Free-space and Atmospheric Laser Communications XI: 24-25 August 2011, San Diego, California, United States

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Author

Arun Majumdar

Binding

Paperback

Pages

248

Publisher

SPIE Press

ISBN #

0819487724

EAN Code

9780819487728

ISBN #

6

Introduction To Database Management Systems By Arun Majumdar (2001-05-24)

Introduction To Database Management Systems by Arun Majumdar (2001-05-24)

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Author

Arun Majumdar

Binding

Paperback

Publisher

Mcgraw Hill Education (India) Private Limited

ISBN #

5

Free-Space Laser Communications: Principles And Advances (Optical And Fiber Communications Reports)

Free-Space Laser Communications: Principles and Advances (Optical and Fiber Communications Reports)

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This is a comprehensive tutorial on the emerging technology of free-space laser communications (FSLC). The book offers an all-inclusive source of information on the basics of FSLC, and a review of state-of-the-art technologies. Coverage includes atmospheric effects for laser propagation and FSLC sys...
Binding

Hardcover

Pages

418

Publisher

Springer

ISBN #

0387286527

EAN Code

9780387286525

ISBN #

2

Us Patents

Nanowires, Nanostructures And Devices Fabricated Therefrom

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US Patent:
6882051, Apr 19, 2005
Filed:
Mar 29, 2002
Appl. No.:
10/112578
Inventors:
Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L023/48
US Classification:
257746, 257741, 257734
Abstract:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods Of Fabricating Nanostructures And Nanowires And Devices Fabricated Therefrom

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US Patent:
6996147, Feb 7, 2006
Filed:
Mar 29, 2002
Appl. No.:
10/112698
Inventors:
Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01S 5/00
US Classification:
372 43, 372 45, 438 22, 438 45
Abstract:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Sacrificial Template Method Of Fabricating A Nanotube

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US Patent:
7211143, May 1, 2007
Filed:
Dec 8, 2003
Appl. No.:
10/731745
Inventors:
Peidong Yang - Berkeley CA, US
Rongrui He - Berkeley CA, US
Joshua Goldberger - Berkeley CA, US
Rong Fan - El Cerrito CA, US
Yi-Ying Wu - Albany CA, US
Deyu Li - Albany CA, US
Arun Majumdar - Orinda CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C30B 23/00
C30B 25/00
C30B 28/12
US Classification:
117 84, 117 87, 117 88, 117106, 117920, 977734, 977742, 977762, 977855
Abstract:
Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar “epitaxial-casting” approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors.

Composite Sensor Membrane

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US Patent:
7344678, Mar 18, 2008
Filed:
Apr 21, 2003
Appl. No.:
10/420661
Inventors:
Arun Majumdar - Orinda CA, US
Srinath Satyanarayana - Berkeley CA, US
Min Yue - Albany CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
B32B 5/02
US Classification:
422 8201, 422 681, 422 8205, 422 98, 20440301, 204412
Abstract:
A sensor may include a membrane to deflect in response to a change in surface stress, where a layer on the membrane is to couple one or more probe molecules with the membrane. The membrane may deflect when a target molecule reacts with one or more probe molecules.

Fluidic Nanotubes And Devices

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US Patent:
7355216, Apr 8, 2008
Filed:
Apr 8, 2004
Appl. No.:
10/822148
Inventors:
Peidong Yang - Berkeley CA, US
Rongrui He - El Cerrito CA, US
Joshua Goldberger - Berkeley CA, US
Rong Fan - El Cerrito CA, US
Yiying Wu - Albany CA, US
Deyu Li - Albany CA, US
Arun Majumdar - Orinda CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C30B 23/00
US Classification:
257200
Abstract:
Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Methods Of Fabricating Nanostructures And Nanowires And Devices Fabricated Therefrom

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US Patent:
7569847, Aug 4, 2009
Filed:
Jan 20, 2005
Appl. No.:
11/040664
Inventors:
Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 23/29
US Classification:
257 14, 257 12, 257 19, 257200, 257616, 257653, 257 93, 257E29003, 257E2907, 977762, 977763, 977764, 977765
Abstract:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods Of Fabricating Nanostructures And Nanowires And Devices Fabricated Therefrom

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US Patent:
7569941, Aug 4, 2009
Filed:
Dec 22, 2006
Appl. No.:
11/645241
Inventors:
Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 29/201
US Classification:
257798, 257 12, 257 14, 257183, 257616, 257E2907, 257E29245, 977762, 977763, 977765
Abstract:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Methods Of Fabricating Nanostructures And Nanowires And Devices Fabricated Therefrom

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US Patent:
7834264, Nov 16, 2010
Filed:
Dec 22, 2006
Appl. No.:
11/645236
Inventors:
Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 35/00
H01L 35/02
H01L 35/12
US Classification:
136230, 136203, 136205, 1362361
Abstract:
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Wikipedia References

Arun Majumdar Photo 3

Arun Majumdar

Work:
Position:

President • Engineer

Education:
Studied at:

University of California, Berkeley • Indian Institute of Technology Bombay

Specialty:

Director

Academic degree:

Professor

Area of science:

Strategy • Materials science

Skills & Activities:
Achieved status:

Indian emigrant

Isbn (Books And Publications)

Free-Space Laser Communications: Principles And Advances

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Author

Arun Majumdar

ISBN #

0387286527

Poverty, Development and Exchange Relations: A Study of Two Birbhum Villages

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Author

Arun Majumdar

ISBN #

8170271088

Free-Space Laser Communications VI: 15-17 August, 2006, San Diego, California, USA

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Author

Arun K. Majumdar

ISBN #

0819463833

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Arun Majumdar from Palo Alto, CADeceased Get Report