Arun Majumdar

6882051, Apr 19, 2005

Mar 29, 2002

10/112578

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

The Regents of the University of California - Oakland CA

H01L023/48

257746, 257741, 257734

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

6996147, Feb 7, 2006

Mar 29, 2002

10/112698

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

The Regents of the University of California - Oakland CA

H01S 5/00

372 43, 372 45, 438 22, 438 45

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

7211143, May 1, 2007

Dec 8, 2003

10/731745

Peidong Yang - Berkeley CA, US
Rongrui He - Berkeley CA, US
Joshua Goldberger - Berkeley CA, US
Rong Fan - El Cerrito CA, US
Yi-Ying Wu - Albany CA, US
Deyu Li - Albany CA, US
Arun Majumdar - Orinda CA, US

The Regents of the University of California - Oakland CA

C30B 23/00
C30B 25/00
C30B 28/12

117 84, 117 87, 117 88, 117106, 117920, 977734, 977742, 977762, 977855

Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar “epitaxial-casting” approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors.

7344678, Mar 18, 2008

Apr 21, 2003

10/420661

Arun Majumdar - Orinda CA, US
Srinath Satyanarayana - Berkeley CA, US
Min Yue - Albany CA, US

The Regents of the University of California - Oakland CA

B32B 5/02

422 8201, 422 681, 422 8205, 422 98, 20440301, 204412

A sensor may include a membrane to deflect in response to a change in surface stress, where a layer on the membrane is to couple one or more probe molecules with the membrane. The membrane may deflect when a target molecule reacts with one or more probe molecules.

7355216, Apr 8, 2008

Apr 8, 2004

10/822148

Peidong Yang - Berkeley CA, US
Rongrui He - El Cerrito CA, US
Joshua Goldberger - Berkeley CA, US
Rong Fan - El Cerrito CA, US
Yiying Wu - Albany CA, US
Deyu Li - Albany CA, US
Arun Majumdar - Orinda CA, US

The Regents of the University of California - Oakland CA

C30B 23/00

257200

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

7569847, Aug 4, 2009

Jan 20, 2005

11/040664

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

The Regents of the University of California - Oakland CA

H01L 23/29

257 14, 257 12, 257 19, 257200, 257616, 257653, 257 93, 257E29003, 257E2907, 977762, 977763, 977764, 977765

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

7569941, Aug 4, 2009

Dec 22, 2006

11/645241

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

The Regents of the University of California - Oakland CA

H01L 29/201

257798, 257 12, 257 14, 257183, 257616, 257E2907, 257E29245, 977762, 977763, 977765

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

7834264, Nov 16, 2010

Dec 22, 2006

11/645236

Arun Majumdar - Orinda CA, US
Ali Shakouri - Santa Cruz CA, US
Timothy D. Sands - Moraga CA, US
Peidong Yang - Berkeley CA, US
Samuel S. Mao - Berkeley CA, US
Richard E. Russo - Walnut Creek CA, US
Henning Feick - Kensington CA, US
Eicke R. Weber - Oakland CA, US
Hannes Kind - Schaffhausen, CH
Michael Huang - Los Angeles CA, US
Haoquan Yan - Albany CA, US
Yiying Wu - Albany CA, US
Rong Fan - El Cerrito CA, US

The Regents of the University of California - Oakland CA

H01L 35/00
H01L 35/02
H01L 35/12

136230, 136203, 136205, 1362361

One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).