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William Wojtczak Phones & Addresses

  • 6803 Rio Bravo Ln, Austin, TX 78737 (512) 394-9394
  • Bryan, TX
  • Fresno, CA
  • Albuquerque, NM
  • San Jose, CA
  • Clovis, CA
  • Santa Clara, CA
  • College Station, TX
  • Mesa, AZ
  • 6803 Rio Bravo Ln, Austin, TX 78737

Work

Position: Service Occupations

Education

Degree: Bachelor's degree or higher

Publications

Us Patents

Formulations Including A 1,3-Dicarbonyl Compound Chelating Agent And Copper Corrosion Inhibiting Agents For Stripping Residues From Semiconductor Substrates Containing Copper Structures

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US Patent:
6344432, Feb 5, 2002
Filed:
Dec 8, 2000
Appl. No.:
09/732370
Inventors:
William A. Wojtczak - Santa Clara CA
Ma. Fatima Seijo - Hayward CA
David Bernhard - Dallas TX
Long Nguyen - San Jose CA
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C11D 904
US Classification:
510175, 510177, 510178, 134 11, 134 12, 134 13, 134 2
Abstract:
A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Aqueous Cleaning Composition Containing Copper-Specific Corrosion Inhibitor For Cleaning Inorganic Residues On Semiconductor Substrate

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US Patent:
7605113, Oct 20, 2009
Filed:
May 24, 2005
Appl. No.:
11/135892
Inventors:
William A. Wojtczak - Austin TX,
Ma. Fatima Seijo - Hayward CA,
David Bernhard - Newtown CT,
Long Nguyen - San Jose CA,
Assignee:
Advanced Technology Materials Inc. - Danbury CT
International Classification:
H01L 21/306
US Classification:
510175, 134 13, 510176
Abstract:
A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0. 1-40% wt. nitrogenous component, e. g. , a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Boric Acid Containing Compositions For Stripping Residues From Semiconductor Substrates

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US Patent:
6306807, Oct 23, 2001
Filed:
May 17, 1999
Appl. No.:
9/312933
Inventors:
William A. Wojtczak - San Jose CA
George Guan - San Jose CA
Long Nguyen - Milpitas CA
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C11D 708
C11D 732
US Classification:
510175
Abstract:
The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid 2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional) 0-5% Chelating agent (optional) 0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).

Aqueous Ammonium Fluoride And Amine Containing Compositions For Cleaning Inorganic Residues On Semiconductor Substrates

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US Patent:
6224785, May 1, 2001
Filed:
Aug 29, 1997
Appl. No.:
8/924021
Inventors:
William A. Wojtczak - San Jose CA
George Guan - San Jose CA
Daniel N. Fine - Peabody MA
Stephen A. Fine - Peabody MA
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C09K 1300
C09K 1306
C09K 1308
US Classification:
252 791
Abstract:
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: Ammonium fluoride and/or a derivative thereof; 1-21% an organic amine or mixture of two amines; 20-55% water; 23-50% a metal chelating agent or mixture of chelating agents. 0-21%.

Selective Silicon Oxide Etchant Formulation Including Fluoride Salt, Chelating Agent, And Glycol Solvent

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US Patent:
6280651, Aug 28, 2001
Filed:
Dec 16, 1998
Appl. No.:
9/215655
Inventors:
William A. Wojtczak - San Jose CA
Long Nguyen - Milpitas CA
Stephen A. Fine - Peabody MA
Assignee:
Advanced Technology Materials, Inc. - Danbury CT
International Classification:
C09K 1300
C09K 1308
C09K 1306
H01L 21302
H01L 21461
US Classification:
252 791
Abstract:
The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0. 1-10%; preferably 0. 2-2. 8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1. 65-7%; preferably 2. 25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.

Novel Passivation Composition And Process

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US Patent:
2013012, May 16, 2013
Filed:
Oct 22, 2012
Appl. No.:
13/657367
Inventors:
Fujifilm Electronic Materials U.S.A., Inc. - North Kingstown RI,
William A. Wojtczak - Austin TX,
Bing Du - Gilbert AZ,
Tomonori Takahashi - Mesa AZ,
Assignee:
Fujifilm Electronic Materials U.S.A., Inc. - North Kingstown RI
International Classification:
C23F 1/44
H01L 21/02
US Classification:
438663, 148 22
Abstract:
This disclosure relates to a passivation composition containing at least one sulfonic acid, at least one compound containing a nitrate or nitrosyl ion, and water. The passivation composition is substantially free of a halide ion.

Cleaning Formulation For Removing Residues On Surfaces

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US Patent:
2012004, Mar 1, 2012
Filed:
Mar 9, 2010
Appl. No.:
13/254944
Inventors:
Bing Du - Gilbert AZ,
William A. Wojtczak - Austin TX,
Stanley A. Ficner - Mesa AZ,
Assignee:
FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. - North Kingstown RI
International Classification:
C23G 1/02
C11D 7/60
US Classification:
134 3, 510175
Abstract:
This disclosure relates to compositions that can be used to remove residues from a semiconductor substrate.

Chemical Mechanical Polishing Compositions For Metal And Associated Materials And Method Of Using Same

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US Patent:
2006016, Jul 20, 2006
Filed:
Mar 22, 2006
Appl. No.:
11/386307
Inventors:
Ying Ma - Weatherford TX,
William Wojtczak - Austin TX,
Cary Regulski - Sugar Hill GA,
Thomas Baum - New Fairfield CT,
David Bernhard - NewTown CT,
Deepak Verma - Scottsdale AZ,
International Classification:
B24B 7/30
US Classification:
451041000
Abstract:
A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
William A Wojtczak from Austin, TX, age ~54 Get Report