William A. Wojtczak - Santa Clara CA
Ma. Fatima Seijo - Hayward CA
David Bernhard - Dallas TX
Long Nguyen - San Jose CA
Advanced Technology Materials, Inc. - Danbury CT
510175, 510177, 510178, 134 11, 134 12, 134 13, 134 2
A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.