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Wayne Te Kennan

from Palo Alto, CA
Age ~67
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Also known as:
Wayne R Kennan, Wayne K Kennan
Phone and address:
1402 Greenwood Ave, Palo Alto, CA 94301
(650) 325-2421
Related to:
Geoffrey L SmithArthur K Smith, 95Amber Austin, 26Todd SmithKim Smith, 55Kristin Austin, 29Amber Austin
Connected to:
Andrew A Kennan, 51Lee O Kennan, 42Rodney P Kennan, 59Roseann Kennan, 78Ainsley Kennard, 40Andrea Kennard, 48Ashlyn M Kennard, 37Caroline K Kennard, 30Corby L Kennard, 54Eileen W Kennard, 85

Wayne Kennan Phones & Addresses

  • 1402 Greenwood Ave, Palo Alto, CA 94301 (650) 325-2421 (415) 325-2421
  • 1405 Greenwood Ave, Palo Alto, CA 94301 (650) 325-2421
  • Kensington, CA
  • Los Altos, CA
  • 1402 Greenwood Ave, Palo Alto, CA 94301

Work

Company: Macom Sep 2010 Position: Fellow of technology

Education

Degree: Master of Science, Masters School / High School: Stanford University 1980 to 1983 Specialities: Electrical Engineering

Interests

Roadbike Cycling and Downhill Skiing

Industries

Consumer Electronics

Resumes

Resumes

Wayne Kennan Photo 1

Fellow Of Technology

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Location:
Palo Alto, CA
Industry:
Consumer Electronics
Work:
Macom
Fellow of Technology
Acco Semiconductor Jul 2009 - Sep 2010
Director of System Engineering
Rfmd Jul 2000 - Mar 2009
Senior Engineering Manager
Eudyna 1989 - 2000
Senior Director, Microwave Laboratory
Microwave Technology 1987 - 1989
Manager, Gaas Mmic Engineering
Education:
Stanford University 1980 - 1983
Master of Science, Masters, Electrical Engineering Cornell University 1974 - 1978
Bachelors, Bachelor of Science, Electrical Engineering
Interests:
Roadbike Cycling and Downhill Skiing

Publications

Us Patents

Doherty Amplifier Configuration For A Collector Controlled Power Amplifier

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US Patent:
7336127, Feb 26, 2008
Filed:
Jun 10, 2005
Appl. No.:
11/149682
Inventors:
Wayne Kennan - Palo Alto CA, US
Assignee:
RF Micro Devices, Inc. - Greensboro NC
International Classification:
H03F 3/68
US Classification:
330124R, 330127, 330295
Abstract:
An efficient power amplifier circuitry for a mobile terminal or similar wireless communication device is provided. The power amplifier circuitry includes an output stage configured as a collector controlled Doherty amplifier, wherein the collector controlled Doherty amplifier increases the efficiency of the power amplifier at backoff power levels. The output stage includes main and peaking amplifiers connected in parallel and operating 90 degrees out-of-phase. The main amplifier is controlled using a first variable supply voltage, and the peaking amplifier is controlled using a second variable supply voltage. The first and second variable supply voltages are provided such that the main amplifier is active and the peaking amplifier is inactive for output power levels less than a predetermined backoff from a maximum output power level, and both the main amplifier and peaking amplifiers are active and operating in concert for output power levels greater than the predetermined backoff.

Amplification Device Having Compensation For A Local Thermal Memory Effect

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US Patent:
20120235750, Sep 20, 2012
Filed:
Mar 16, 2011
Appl. No.:
13/049215
Inventors:
Marcus Granger-Jones - Scotts Valley CA, US
Wayne Kennan - Palo Alto CA, US
Assignee:
RF MICRO DEVICES, INC. - Greensboro NC
International Classification:
H03F 3/04
US Classification:
330296
Abstract:
In one embodiment, an amplification device has a temperature differential sensing circuit that reduces a local thermal memory effect. The amplification device may include an amplification circuit and biasing circuitry. The amplification device is operable to receive an input signal and generate and amplified output signal. The biasing circuitry generates a biasing signal that sets the quiescent operating level of the amplified output signal. The temperature differential sensing circuit provides a bias level adjustment signal that adjusts the biasing signal to maintain the quiescent operating level of the amplified output signal at a desired level.

High Efficiency Multiple Power Level Amplifier Circuit

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US Patent:
56614349, Aug 26, 1997
Filed:
May 12, 1995
Appl. No.:
8/439820
Inventors:
R. Steven Brozovich - San Jose CA
Wayne Kennan - Palo Alto CA
Assignee:
Fujitsu Compound Semiconductor, Inc. - San Jose CA
International Classification:
H03F 114
US Classification:
330 51
Abstract:
A high efficiency multiple power level amplifier circuit for reducing power consumption during low power operations. A plurality of power amplifier stages are cascaded to provide multiple levels of amplification. At least one power amplification stage includes a signal switching network to allow one or any combination of power amplifiers to be switched out when lower power operations are desired. The switched out power amplifiers are biased such that substantially no current is drawn from the power source.

Mmic Downconverter For A Direct Broadcast Satellite Low Noise Block Downconverter

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US Patent:
56493126, Jul 15, 1997
Filed:
Nov 14, 1994
Appl. No.:
8/337842
Inventors:
Wayne Kennan - Palo Alto CA
Assignee:
Fujitsu Limited - Kawasaki
International Classification:
H04B 128
US Classification:
455333
Abstract:
A monolithic microwave integrated circuit (MMIC) downconverter for a direct broadcast satellite low noise block downconverter is comprised of a mixer that produces sum and difference frequency signals from an oscillator signal and a radio frequency (RF) signal. An intermediate frequency (IF) signal is obtained by selecting the difference signal of the sum and difference frequency signals using a low pass filter. An active load and amplifier circuit coupled to the low pass filter both provides a DC bias voltage to the mixer that is substantially insensitive to DC current and amplifies the IF signal from the low pass filter. The combined active load and amplifier circuit conserves DC power and reduces the MMiC circuit size, thus reducing the Gallium Arsenide area and therefore, the component cost.

Single Balanced Frequency Downconverter For Direct Broadcast Satellite Transmissions And Hybrid Ring Signal Combiner

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US Patent:
59038276, May 11, 1999
Filed:
Dec 20, 1995
Appl. No.:
8/575719
Inventors:
Wayne Kennan - Palo Alto CA
Edmar Camargo - San Jose CA
Assignee:
Fujitsu Compound Semiconductor, Inc. - San Jose CA
International Classification:
H04B1/26
US Classification:
455326
Abstract:
A monolithic microwave integrated circuit (MMIC) semiconductor chip, for use with a hybrid coupler, in a frequency downconverter. The chip has a first input lead for receiving a first combined input signal from the coupler, a second input lead for receiving a second combined input signal from the coupler, and an output lead. Each input signal is a microwave signal combined with a further frequency signal, and one of the microwave and further frequency signals of the first combined signal is out of phase with one of the microwave and further frequency signals of the second combined signal. A single balanced mixer has a first single ended mixer for converting the first combined signal to a first intermediate frequency signal and a second single ended mixer for converting the second combined signal to a second intermediate frequency signal. An amplifier is coupled to the first and second mixers for forming an amplified unbalanced intermediate frequency (IF) signal at the output lead representative of the first and second intermediate frequency signals.

Distributed Amplifier Using Dual-Gate Gaas Fet's

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US Patent:
45958815, Jun 17, 1986
Filed:
May 29, 1985
Appl. No.:
6/738865
Inventors:
Wayne Kennan - Palo Alto CA
Assignee:
Avantek, Inc. - Santa Clara CA
International Classification:
H03F 360
US Classification:
330 54
Abstract:
A 2-18 gigahertz monolithic distributed amplifier using dual-gate gallium arsenide field effect transistors for maximum gain over the design bandwidth.
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Wayne Te Kennan from Palo Alto, CA, age ~67 Get Report