20040053439, Mar 18, 2004
Thomas Schafbauer - Wappinger Falls NY, US
Klaus Schruefer - Munich, DE
Odin Prigge - Wappinger Falls NY, US
Reinhard Mahnkopf - Wappinger Falls NY, US
Walter Neumueller - Poughkeepsie NY, US
Infineon Technologies North America Corp. - San Jose CA
A method of fabricating a semiconductor connective region of a first conductivity type through a semiconductor layer of a second conductivity type which at least partly separates a bulk portion of semiconductor body (substrate) of the first conductivity type from a semiconductor well of the first conductivity type includes a step of implanting ions into a portion of the layer to convert the conductivity of the implanted portion to the first conductivity type. This electrically connects the well to the bulk portion of the body. Any biasing potential applied to the bulk portion of the body is thus applied to the well. This eliminates any need to form a contact in the well for biasing the well and thus allows the well to be reduced in size.