Thomas J Kloffenstein

7153690, Dec 26, 2006

Oct 23, 2002

10/278449

Russell Stevens - Austin TX, US
Thomas Kloffenstein - Morgan Hill CA, US
Todd Aycock - Austin TX, US
Joseph W. Evans - Oak Park IL, US
Richard Bhella - Gilbert AZ, US

Advanced Technology Materials, Inc. - Danbury CT

G01N 35/02
G01N 31/16
G01N 27/02
G01N 21/00

436 51, 436 50, 422 62, 422 75, 422 76, 422 77

A multicomponent fluid composition monitoring and compositional control system, in which a component analysis is effected by titration or other analytical procedure, for one or more components of interest, and a computational means then is employed to determine and responsively adjust the relative amount or proportion of the one or more components in the multicomponent fluid composition, to maintain a predetermined compositional character of the multicomponent fluid composition. The system is usefully employed in semiconductor manufacturing photoresist and post-etch residue removal, in which the cleaning medium is a semi-aqueous solvent composition, and water is the monitored and responsively adjusted component.

7214537, May 8, 2007

Oct 4, 2002

10/264408

Russell Stevens - Austin TX, US
Thomas Kloffenstein - Morgan Hill CA, US
Todd Aycock - Austin TX, US
Joseph W. Evans - Oak Park IL, US

Advanced Technology Materials, Inc. - Danbury CT

G01N 33/18
G01N 31/16

436 42, 436 51, 436 52, 422 62, 422 75

A multicomponent fluid composition monitoring and compositional control system, in which a component analysis is effected by titration or other analytical procedure, for one or more components of interest, and a computational means then is employed to determine and responsively adjust the relative amount or proportion of the one or more components in the multicomponent fluid composition, to maintain a predetermined compositional character of the multicomponent fluid composition. The system is usefully employed in semiconductor manufacturing photoresist and post-etch residue removal, in which the cleaning medium is a semi-aqueous solvent composition, and water is the monitored and responsively adjusted component.

7534752, May 19, 2009

Sep 17, 2001

09/954284

William A. Wojtczak - Austin TX, US
Ma. Fatima Seijo - Hayward CA, US
Thomas J. Kloffenstein - Morgan Hill CA, US

Advanced Technology Materials, Inc. - Danbury CT

C11D 7/32

510175, 510176

A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively remove inorganic compound residue from a semiconductor wafer. Preferably, the chelating agent is selected from the group consisting of 2,4-Pentanedione, Malonic acid, Oxalic acid, p-Toluenesulfonic acid, and Trifluoroacetic acid; and the polar solvent is selected from the group consisting of Water, Ethylene glycol, N-Methylpyrrolidone (NMP), Gamma butyrolactone (BLO), Cyclohexylpyrrolidone (CHP), Sulfolane, 1,4-Butanediol, and Butyl carbitol.

20060211129, Sep 21, 2006

May 22, 2006

11/438453

Russell Stevens - Austin TX, US
Thomas Kloffenstein - Morgan Hill CA, US
Todd Aycock - Austin TX, US
Joseph Evans - Oak Park IL, US

G01N 24/00

436173000

A multicomponent fluid composition monitoring and compositional control system, in which a component analysis is effected by titration or other analytical procedure, for one or more components of interest, and a computational means then is employed to determine and responsively adjust the relative amount or proportion of the one or more components in the multicomponent fluid composition, to maintain a predetermined compositional character of the multicomponent fluid composition. The system is usefully employed in semiconductor manufacturing photoresist and post-etch residue removal, in which the cleaning medium is a semi-aqueous solvent composition, and water is the monitored and responsively adjusted component.

42646464, Apr 28, 1981

Mar 12, 1979

6/019820

David D. Thornburg - Los Altos CA
Thomas J. Kloffenstein - Sunnyvale CA

Xerox Corporation - Stamford CT

C23C 302

427 98

The method of selectively depositing a metal pattern on the surface of a laminar film comprising a dielectric substrate having a co-extensive metallic layer and a ceramic overlayer. A desired metallic pattern may be formed on the surface of the film by applying a releaseable mask in those regions of the film surface where plating of the surface is not desired, catalyzing the unmasked regions of the film surface, removing the mask from the film surface and thereafter immersing the film in an electroless plating bath whereby only the catalyzed regions are plated with the electroless metal of the bath. The preferred film has gold intermediate layer upon which electroless nickel or copper pattern plating is accomplished.

63231689, Nov 27, 2001

Jul 3, 1996

8/675500

Thomas J. Kloffenstein - Union City CA
Daniel N. Fine - Fremont CA

Advanced Technology Materials, Inc. - Danbury CT

C11D 320

510175

A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: chelating agent 1-15% water 25-99% polar organic solvent 0-60% In the preferred embodiment the chelating agent is catechol (1,2-dihydroxybenzene) and the polar organic solvent is gamma butyrolactone (BLO).