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Tedd Stickel Phones & Addresses

  • 258 Barrett Dr, Doylestown, PA 18901 (215) 345-7159
  • Chalfont, PA
  • Lansdale, PA
  • Cranbury, NJ
  • 258 Barrett Dr, Doylestown, PA 18901 (215) 519-1812

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Publications

Us Patents

Cmos Input Buffer Receiver Circuit With Ultra Stable Switchpoint

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US Patent:
47630213, Aug 9, 1988
Filed:
Jul 6, 1987
Appl. No.:
7/069736
Inventors:
Tedd K. Stickel - Chalfont PA
Assignee:
Unisys Corporation - Blue Bell PA
International Classification:
H03K 17094
US Classification:
307475
Abstract:
A CMOS buffer receiver is provided for converting TTL or CMOS input voltage signals to CMOS signals so as to drive CMOS loads on VSLI chips. The buffer receiver comprises a reference voltage generator coupled to a compensation network having an output signal which varies with process, temperature and voltage supply. The compensated output signal is coupled to the gates of any number of current source load transistors of a plurality of series connected transistor pairs which comprise individual stabilized input converters all of which have their switchpoint located in the middle of their characteristic curves so that their switchpoints are immune to process, temperature and supply voltage variations.

Gallium Arsenide To Emitter Coupled Logic Level Converter

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US Patent:
44108150, Oct 18, 1983
Filed:
Sep 24, 1981
Appl. No.:
6/305320
Inventors:
Stephen A. Ransom - Huntington Valley PA
Tedd K. Stickel - Chalfont PA
Joseph B. Tomei - Chalfont PA
Assignee:
Sperry Corporation - New York NY
International Classification:
H03K 19092
US Classification:
307475
Abstract:
A high speed gallium arsenide (GaAs) integrated circuit is provided which converts GaAs input or source signals to voltage levels for directly driving emitter coupled logic (ECL) circuits. The high speed GaAs level converter comprises a level shifting network at the input, two stages of differential amplification and a novel source follower output stage.

High Performance Mesfet Transistor For Vlsi Implementation

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US Patent:
44940165, Jan 15, 1985
Filed:
Jul 26, 1982
Appl. No.:
6/401484
Inventors:
Stephen A. Ransom - Huntingdon Valley PA
Tedd K. Stickel - Chalfont PA
Assignee:
Sperry Corporation - New York NY
International Classification:
H03K 19017
H03K 19094
H03K 1920
US Classification:
307450
Abstract:
A gallium arsenide buffer amplifier for use in a very large scale integrated circuits is provided. The transistor device in the buffer amplifier has a uniform depth N+ source, gate and drain region and the N+ dopant concentration is made very high which effectively reduces the resistance of the transistor device and permits the area of the device to be reduced by more than one order of magnitude while maintaining high current and power levels.

High Density Gallium Arsenide Source Driven Logic Circuit

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US Patent:
45903930, May 20, 1986
Filed:
Jun 13, 1983
Appl. No.:
6/503944
Inventors:
Stephen A. Ransom - Huntingdon Valley PA
Tedd K. Stickel - Chalfont PA
Assignee:
Sperry Corporation - Blue Bell PA
International Classification:
H03K 1921
H03K 19094
US Classification:
307471
Abstract:
A novel high speed gallium arsenide depletion mode field effect transistor logic circuit is provided. One logic input is connected to the source electrode of the switching transistor and draws current when a low level input voltage is provided. Other logic inputs are connected to the gate electrode of the switching transistor and supplies current when a high or low level input voltage is provided. The novel logic output from the source electrode of the switching transistor is a complex OR function which may be employed for a logic family having fewer stages of logic than prior art gallium arsenide circuits.

Constant Current Source Stabilized Semiconductor Oscillator

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US Patent:
42086396, Jun 17, 1980
Filed:
Jun 16, 1978
Appl. No.:
5/916224
Inventors:
Tedd Stickel - Chalfont PA
Assignee:
Solid State Scientific Inc. - Montgomeryville PA
International Classification:
H03B 536
US Classification:
331116FE
Abstract:
A crystal controlled oscillator has a substantially stable frequency in an environment of wide power supply potential changes. A first CMOS device of a pair is coupled to a crystal network and operates as a substantially small signal linear amplifier. A second CMOS device of the pair forms a constant current source for the first device by means of a plurality of diodes coupled in series circuit between two terminals of the second device to produce a substantially constant biasing potential for the second device only when the potential of the power supply exceeds the value of the diode drop potentials. In this manner, the voltage across the oscillator is relatively independent of power supply voltage changes to provide frequency stability over those changes.

High Speed Dynamic Flip-Flop System

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US Patent:
41048601, Aug 8, 1978
Filed:
Dec 27, 1976
Appl. No.:
5/754428
Inventors:
Tedd Stickel - Chalfont PA
Assignee:
Solid State Scientific Inc. - Montgomeryville PA
International Classification:
G04C 300
H03K 2330
H03K 3353
US Classification:
58 23R
Abstract:
A high speed dynamic CMOS flip-flop system having a master and a slave section each of which have a different total propagation delay. Asymmetrical clock signals are applied to the master and slave sections with one cycle portion of each clock signal turning on the master section and the other cycle turning on the slave section. Each cycle portion has a time duration substantially equal to the total propagation delay of its respective master and slave section. In this manner, the duty cycle of the clock signal cycle is matched to the ratio of the propagation delays of the master and slave sections.

High-Gain Stabilized Converter

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US Patent:
43933157, Jul 12, 1983
Filed:
May 18, 1981
Appl. No.:
6/264898
Inventors:
Tedd K. Stickel - Chalfont PA
Stephen A. Ransom - Huntingdon Valley PA
Assignee:
Sperry Corporation - New York NY
International Classification:
H03K 500
H03K 19092
US Classification:
307264
Abstract:
This invention provides a novel high-gain stabilized converter circuit which is adapted to convert emitter coupled logic (ECL) signals for use in gallium arsenide (Ga As) circuits. The novel converter is adapted to be made in gallium arsenide logic on the same chip as the logic circuitry which it is driving. The converter includes a novel differential amplifier having a level shifting network at the active input and a second level shifting network at the reference input to provide a stabilized high-gain circuit which is compensated for variations in temperature and process deviations.

High Speed-Low Power Gallium Arsenide Basic Logic Circuit

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US Patent:
44044801, Sep 13, 1983
Filed:
Feb 1, 1982
Appl. No.:
6/344585
Inventors:
Stephen A. Ransom - Huntingdon Valley PA
Tedd K. Stickel - Chalfont PA
Assignee:
Sperry Corporation - New York NY
International Classification:
H03K 19094
H03K 19017
H03K 1920
US Classification:
307475
Abstract:
The present invention provides a high-speed low-power gallium arsenide basic logic circuit which is capable of being driven by either emitter coupled logic or gallium arsenide logic level signals to provide combinational logic gating such as OR-AND, OR-NAND, OR-AND-OR and OR-AND-NOR capable of driving directly either emitter coupled logic or gallium arsenide logic circuits. The combinational logic gating is basically accomplished by diode logic which performs other functions and which requires less area on an integrated circuit chip than active switching transistors.
Tedd K Stickel from Doylestown, PA, age ~76 Get Report