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Suraj Patil Phones & Addresses

  • Dallas, TX
  • Burleson, TX
  • Champaign, IL
  • Lubbock, TX

Work

Company: T.y. b.sc.i.t

Education

School / High School: Mumbai University- Mumbai, Maharashtra Feb 2010 Specialities: H. S. C.

Resumes

Resumes

Suraj Patil Photo 1

R And D Mechanical Engineer, Dbt

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Location:
Dallas, TX
Industry:
Oil & Energy
Work:
Harbison Fischer Dover Artificial Lifts Jun 2017 - May 2018
Product Engineer, Research and Development

Harbison-Fischer Jun 2017 - May 2018
Product Engineer , Research and Development

Texas Tech University Jul 2015 - Sep 2015
Graduate Research Assistant

Texas Tech University Aug 2012 - May 2014
Graduate Student

Premier Engineering Works Sep 2010 - Oct 2011
Manufacturing Engineer
Education:
Texas Tech University 2012 - 2013
Master of Science, Masters, Petroleum Engineering
Visvesvaraya Technological University 2006 - 2010
Bachelors, Mechanical Engineering
Skills:
Matlab
Production Engineering
Autocad
Mechanical Engineering
Petrel
Gas
Reservoir Engineering
Eclipse
Saphir
Pvtsim
Energy
Ansys
Fekete
Cmg
Fracpro
Techlog
Pressure Transient Analysis
Fracture
Solidworks
Reservoir Simulation
Eor
Microsoft Office
Petroleum Engineering
Drilling
C
C++
Fortran
Languages:
English
Hindi
Kannada
Marathi
Suraj Patil Photo 2

Project Manager

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Location:
Dallas, TX
Work:

Project Manager
Education:
Chatrapati Sahuji Maharaj Kanpur University, Kanpur
Suraj Patil Photo 3

Td Process Integration And Device

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Work:
Samsung Foundry
Td Process Integration and Device
Suraj Patil Photo 4

Suraj Patil

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Suraj Patil Photo 5

Suraj Patil

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Suraj Patil Photo 6

Agrooverseer

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Work:

Agrooverseer
Suraj Patil Photo 7

Suraj Patil

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Suraj Patil Photo 8

Suraj Patil

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Publications

Us Patents

Method And Apparatus For Fabricating Piezoresistive Polysilicon By Low-Temperature Metal Induced Crystallization

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US Patent:
20100102403, Apr 29, 2010
Filed:
Aug 14, 2009
Appl. No.:
12/541907
Inventors:
Suraj K. Patil - Arlington TX, US
Donald Philip Butler - Colleyville TX, US
Assignee:
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM - Austin TX
International Classification:
H01L 29/84
H01L 21/28
H01L 21/30
US Classification:
257415, 438 50, 438 53, 257E29324, 257E21158, 257E21211
Abstract:
The present invention provides a method and apparatus for fabricating piezoresistive polysilicon on a substrate by low-temperature metal induced crystallization by: (1) providing the substrate having a passivation layer; (2) performing, at or near room temperature in a chamber without breaking a vacuum or near-vacuum within the chamber, the steps of: (a) creating a metal layer on the passivation layer, and (b) creating an amorphous silicon layer on the metal layer, wherein the metal layer and the amorphous silicon layer have approximately the same thickness; (3) annealing the substrate, the passivation layer, the metal layer and the amorphous silicon layer at a temperature equal to or less than 600 C. and a period of time equal to or less than three hours to form a doped polysilicon layer below a residual metal layer; and (4) removing the residual metal layer to expose the doped polysilicon layer.
Suraj M Patil from Dallas, TX, age ~37 Get Report