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Stacey C Wakeham

from Bloomington, MN
Age ~51

Stacey Wakeham Phones & Addresses

  • 8225 Pennsylvania Rd, Minneapolis, MN 55438 (952) 888-1470
  • Bloomington, MN
  • Somerville, MA

Work

Company: Seagate technology Dec 1, 2001 Position: Engineer

Education

School / High School: Massachusetts Institute of Technology 1995 to 2001 Specialities: Chemistry

Industries

Computer Hardware

Resumes

Resumes

Stacey Wakeham Photo 1

Engineer

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Location:
Minneapolis, MN
Industry:
Computer Hardware
Work:
Seagate Technology
Engineer
Education:
Massachusetts Institute of Technology 1995 - 2001

Publications

Us Patents

Magnetic Device Definition With Uniform Biasing Control

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US Patent:
8318030, Nov 27, 2012
Filed:
Jul 13, 2009
Appl. No.:
12/502180
Inventors:
Xilin Peng - Bloomington MN, US
Stacey C. Wakeham - Bloomington MN, US
Yifan Zhang - Eden Prairie MN, US
Zhongyan Wang - San Ramon CA, US
Konstantin R. Nikolaev - Edina MN, US
Mark Henry Ostrowski - Lakeville MN, US
Yonghua Chen - Edina MN, US
Juren Ding - Eden Prairie MN, US
Assignee:
Seagate Technology LLC - Cupertino CA
International Classification:
B44C 1/22
US Classification:
216 22, 216 67, 216 72, 216 75
Abstract:
A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.

Etch-Stop Layers For Patterning Block Structures For Reducing Thermal Protrusion

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US Patent:
20060102956, May 18, 2006
Filed:
Nov 18, 2004
Appl. No.:
10/991569
Inventors:
Mallika Kamarajugadda - Eden Prairie MN, US
Michael Kautzky - Eagan MN, US
Stacey Wakeham - Bloomington MN, US
David Seets - Shorewood MN, US
Arun Natarajan - Eagan MN, US
Assignee:
Seagate Technology LLC - Scotts Valley CA
International Classification:
H01L 23/62
US Classification:
257359000
Abstract:
The present invention provides a thin-film structure that includes an etch-stop layer having a first side and a second side, a patterned compensation layer for dissipating thermal energy, and an etch-vulnerable layer, where the etch-stop layer substantially impedes etching. The patterned compensation layer is adjacent the first side of the etch-stop layer, and the etch-vulnerable layer is adjacent the second side of the etch-stop layer.

Stack With Wide Seed Layer

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US Patent:
20130288076, Oct 31, 2013
Filed:
Apr 30, 2012
Appl. No.:
13/460058
Inventors:
Eric Walter Singleton - Maple Plain MN, US
Jae-Young Yi - Prior Lake MN, US
Konstantin Nikolaev - Bloomington MN, US
Victor Boris Sapozhnikov - Minnetonka MN, US
Stacey Christine Wakeham - Bloomington MN, US
Shaun Eric McKinlay - Eden Prairie MN, US
Assignee:
SEAGATE TECHNOLOGY LLC - Cupertino CO
International Classification:
G11B 5/39
US Classification:
4288111, 4288112
Abstract:
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.

Thin Data Reader Cap

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US Patent:
20180308515, Oct 25, 2018
Filed:
Jun 28, 2018
Appl. No.:
16/021731
Inventors:
- Cupertino CA, US
ZhiGuo Ge - Edina MN, US
Shaun E. McKinlay - Eden Prairie MN, US
Jae-Young Yi - Prior Lake MN, US
Stacey C. Wakeham - Bloomington MN, US
International Classification:
G11B 5/39
C23F 1/00
Abstract:
A data reader may have a magnetoresistive stack with a magnetically free layer decoupled from a first shield by a cap. The cap can have one or more sub-layers respectively configured with a thickness of 4 nm or less as measured parallel to a longitudinal axis of the magnetoresistive stack on an air bearing surface.

Thin Data Reader Cap

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US Patent:
20170221506, Aug 3, 2017
Filed:
Feb 2, 2016
Appl. No.:
15/013158
Inventors:
- Cupertino CA, US
ZhiGuo Ge - Edina MN, US
Shaun E. McKinlay - Eden Prairie MN, US
Jae-Young Yi - Prior Lake MN, US
Stacey C. Wakeham - Bloomington MN, US
International Classification:
G11B 5/39
C23F 1/00
Abstract:
A data reader may have a magnetoresistive stack with a magnetically free layer decoupled from a first shield by a cap. The cap can have one or more sub-layers respectively configured with a thickness of 4 nm or less as measured parallel to a longitudinal axis of the magnetoresistive stack on an air bearing surface.

Stack With Wide Seed Layer

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US Patent:
20140356648, Dec 4, 2014
Filed:
Aug 19, 2014
Appl. No.:
14/463331
Inventors:
Eric Walter Singleton - Maple Plain MN, US
Jae-Young Yi - Prior Lake MN, US
Konstantin Nikolaev - Bloomington MN, US
Victor Boris Sapozhnikov - Minnetonka MN, US
Stacey Christine Wakeham - Bloomington MN, US
Shaun Eric McKinlay - Eden Prairie MN, US
Assignee:
SEAGATE TECHNOLOGY LLC - Cupertino CO
International Classification:
G11B 5/39
US Classification:
4288111, 4288112
Abstract:
A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.

Method And Apparatus For Chemical-Mechanical Polishing

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US Patent:
20140272472, Sep 18, 2014
Filed:
Mar 12, 2013
Appl. No.:
13/797381
Inventors:
- Cupertino CA, US
Shaun Eric McKinlay - Eden Prairie MN, US
Stacey Christine Wakeham - Bloomington MN, US
International Classification:
G11B 5/33
US Classification:
428814, 427127, 216 22
Abstract:
In accordance with certain embodiments, a method can be utilized that includes depositing a backfill material layer over a reader stack; depositing a chemical-mechanical-polishing stop layer above the layer of backfill material; and depositing a sacrificial layer on top of the chemical-mechanical-polishing stop layer.
Stacey C Wakeham from Bloomington, MN, age ~51 Get Report