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Son M Phi

from Milpitas, CA
Age ~67

Son Phi Phones & Addresses

  • 205 Summerwind Dr, Milpitas, CA 95035 (408) 934-0466
  • San Jose, CA
  • Santa Clara, CA
  • 205 Summerwind Dr, Milpitas, CA 95035

Work

Position: Protective Service Occupations

Education

Degree: Bachelor's degree or higher

Emails

Publications

Us Patents

Temperature Controlled Dome-Coil System For High Power Inductively Coupled Plasma Systems

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US Patent:
6822185, Nov 23, 2004
Filed:
Oct 8, 2002
Appl. No.:
10/267711
Inventors:
Michael Welch - Pleasanton CA
Paul E. Luscher - Sunnyvale CA
Siamak Salimian - Sunnyvale CA
Rolf Guenther - Monte Sereno CA
Zhong Qiang Hua - Saratoga CA
Son Phi - Milpitas CA
Peter Loewenhardt - Pleasanton CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B23K 900
US Classification:
21912143, 219399, 392414
Abstract:
The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

Wafer Profile Modification Through Hot/Cold Temperature Zones On Pedestal For Semiconductor Manufacturing Equipment

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US Patent:
20120074126, Mar 29, 2012
Filed:
Mar 25, 2011
Appl. No.:
13/072546
Inventors:
Won B. Bang - Gilroy CA, US
Tien Fak Tan - Fremont CA, US
Son M. Phi - Milpitas CA, US
Dmitry Lubomirsky - Cupertino CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05B 3/68
US Classification:
2194431
Abstract:
A substrate support comprising a top ceramic plate providing a substrate support surface for supporting a substrate during substrate processing, a substrate pedestal having coolant channels formed therein and a thermoelectric deck sandwiched between the top ceramic plate and substrate pedestal. The thermoelectric deck includes a plurality of embedded thermoelectric elements that can either heat or cool the substrate support surface.

Direct Skew Control And Interlock Of Gantry

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US Patent:
62462032, Jun 12, 2001
Filed:
Feb 5, 1999
Appl. No.:
9/245445
Inventors:
Rexford Abbott - San Jose CA
Son Phi - San Jose CA
Assignee:
Silicon Valley Group, Inc. - San Jose CA
International Classification:
B64C 1706
US Classification:
318649
Abstract:
Systems and methods are described for direct skew control and interlock of a gantry. An apparatus includes a gantry that includes a first member defining a gantry primary axis Z, a cross member defining a secondary axis X that is coupled to the first member via a trunnion, and a second member defining a gantry primary axis Z' coupled to the cross member via an elastic hinge. A method for controlling skew on a cross member moved by a first and second driver includes moving the first and second drivers to a first position, measuring a resulting skew value, and correcting the skew on the cross member by moving the first driver and/or the second driver.

Multi-Zone Heater Model-Based Control In Semiconductor Manufacturing

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US Patent:
20210022212, Jan 21, 2021
Filed:
Jul 18, 2019
Appl. No.:
16/515993
Inventors:
- Santa Clara CA, US
Don Channa Kaluarachchi - Santa Clara CA, US
Son Phi - Santa Clara CA, US
Ramyashree Vishnuprasad - Santa Clara CA, US
Dmitry Lubomirsky - Cupertino CA, US
International Classification:
H05B 1/02
G01K 7/18
H01L 21/67
H01J 37/32
Abstract:
A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

Low Temperature Chuck For Plasma Processing Systems

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US Patent:
20170229326, Aug 10, 2017
Filed:
Apr 28, 2017
Appl. No.:
15/581497
Inventors:
- Santa Clara CA, US
Zilu Weng - San Diego CA, US
Dmitry Lubomirsky - Cupertino CA, US
Satoru Kobayashi - Sunnyvale CA, US
Tae Seung Cho - San Jose CA, US
Soonam Park - Sunnyvale CA, US
Son M. Phi - Milpitas CA, US
Shankar Venkataraman - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/67
H01L 21/683
Abstract:
A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Low Temperature Chuck For Plasma Processing Systems

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US Patent:
20160225652, Aug 4, 2016
Filed:
Feb 3, 2015
Appl. No.:
14/612857
Inventors:
- Santa Clara CA, US
Zilu Weng - Sunnyvale CA, US
Dmitry Lubomirsky - Cupertino CA, US
Satoru Kobayashi - Santa Clara CA, US
Tae Seung Cho - San Jose CA, US
Soonam Park - Sunnyvale CA, US
Son M. Phi - Milpitas CA, US
Shankar Venkataraman - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/683
H01L 21/3065
H01L 21/67
Abstract:
A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.
Son M Phi from Milpitas, CA, age ~67 Get Report