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Saroja C Ramamurthi

from Allen, TX
Age ~63
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Also known as:
Saroga C Ramamurthi, Saroja I
Phone and address:
824 Heritage Pkwy S, Allen, TX 75002
(972) 727-4179
Related to:
Induben B Rana, 70Nikunj A Rana, 36Aishwarya Ramamurthi, 27Malti A Rana, 64Arathi Ramamurthi, 34Ram K Ramamurthi, 65
Connected to:
Arthi Ramamurthy, 44Deepak Ramamurthy, 37Divya Ramamurthy, 46Harsha B Ramamurthy, 52Jagadish R Ramamurthy, 40Mohan Ramamurthy, 40Priya Ramamurthy, 33Radhika Ramamurthi, 48Rajesh Ramamurthy, 51Ramakrishnan Ramamurthi, 61

Saroja Ramamurthi Phones & Addresses

  • 824 Heritage Pkwy S, Allen, TX 75002 (972) 727-4179
  • Dallas, TX
  • Berkeley, CA

Work

Company: Kla-tencor corp 2000 Position: Applications manager

Education

Degree: Masters School / High School: Indian Institute of Technology, Madras Specialities: Chemistry

Skills

Semiconductors • Metrology • Thin Films • Semiconductor Industry • Design of Experiments • Silicon • Engineering Management • Ic • Spc • Failure Analysis • Manufacturing • Optics • Nanotechnology • Process Engineering • Characterization • Electronics • R&D • Laser • Analog • Reliability • Product Lifecycle Management • Six Sigma • Process Simulation • Testing • Robotics • Process Integration • Sensors • Jmp • Simulations • Mems • Cmos • Physics • Microelectronics • Materials Science • Product Engineering • Engineering • Automation • Cross Functional Team Leadership

Interests

Social Services • Children • Education • Environment • Health

Industries

Semiconductors

Resumes

Resumes

Saroja Ramamurthi Photo 1

Rpm And Senior Applications Manager

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Location:
14650 Las Flores Dr, Dallas, TX 75254
Industry:
Semiconductors
Work:
KLA-Tencor corp since 2000
Applications Manager
Texas Instruments Feb 1994 - Jul 1997
Process Development Engineer
Lawrence Berkeley National Laboratory Jul 1988 - Jan 1990
Research Assistant
Education:
Indian Institute of Technology, Madras
Masters, Chemistry
Skills:
Semiconductors
Metrology
Thin Films
Semiconductor Industry
Design of Experiments
Silicon
Engineering Management
Ic
Spc
Failure Analysis
Manufacturing
Optics
Nanotechnology
Process Engineering
Characterization
Electronics
R&D
Laser
Analog
Reliability
Product Lifecycle Management
Six Sigma
Process Simulation
Testing
Robotics
Process Integration
Sensors
Jmp
Simulations
Mems
Cmos
Physics
Microelectronics
Materials Science
Product Engineering
Engineering
Automation
Cross Functional Team Leadership
Interests:
Social Services
Children
Education
Environment
Health

Publications

Us Patents

Method Of Forming A Lift-Off Layer Having Controlled Adhesion Strength

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US Patent:
59449756, Aug 31, 1999
Filed:
Jan 24, 1997
Appl. No.:
8/788149
Inventors:
Arthur M. Wilson - Richardson TX
Saroja Ramamurthi - Allen TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
C25D 502
C25D 554
C25D 510
C23C 2800
US Classification:
205122
Abstract:
A method of fabricating an emitter plate 12 for use in a field emission device comprising the steps of providing an insulating substrate 18 and forming a first conductive layer 13 on the insulating substrate 18. This is followed by the steps of forming an insulating layer 20 on the first conductive layer 13 and forming a second conductive layer 22 on the insulating layer 20. Then, a plurality of apertures 34 are formed through the second conductive layer 22 and through the insulating layer 20. A lift-off layer 36 is then formed on the second conductive layer 22. The lift-off layer 36 is formed by a plating process wherein the plating bath has a pH between 2. 25 and 4. 5, and current densities of 1 to 2O mA/cm. sup. 2. The method may further comprise depositing conductive material through the plurality of apertures 34 to form a microtip 14 in each of the plurality of apertures 34. The excess deposited conductive material 14' and the lift-off layer 36 are then removed from the second conductive layer 22.
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Saroja C Ramamurthi from Allen, TX, age ~63 Get Report