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Rebecca J Nikolic

from Oakland, CA
Age ~50
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Also known as:
Rebecca Jane Nikolic, Rebecca Ja Welty, Rebecca J Welty, Becky J Nikolic
Phone and address:
8 Woodside Glen Ct, Oakland, CA 94602
(510) 530-2167
Related to:
Aleksandra NikolicRichard B Welty, 73Rick B Welty, 73Charleen Welty, 44Jesse R Welty, 54Borivoje Nikolic, 56Carolyn D Welty, 74Charleen H Welty
Connected to:
Alex Nikolich, 44Alexandra N Nikolich, 33Angelina Nikolic, 73Bud Nikolic, 103Christopher H Nikolich, 54Danijel N Nikolic, 40Danka Nikolic, 47Dusan N Nikolic, 90Dustin J Nikolich, 36Emily A Nikolic, 54

Rebecca Nikolic Phones & Addresses

  • 8 Woodside Glen Ct, Oakland, CA 94602 (510) 530-2167
  • Mountain View, CA
  • La Jolla, CA
  • Livermore, CA
  • Davis, CA
  • Palo Alto, CA
  • Portola Valley, CA
  • Alameda, CA

Work

Company: Lawrence livermore national laboratory, center for micro and nano technology Apr 2002 Position: R&d group leader, mems, electronics, photonics

Education

Degree: PhD School / High School: University of California, San Diego 1998 to 2002 Specialities: Electrical Engineering

Skills

R&D • Materials Science • Photonics • Mems • Characterization • Physics • Semiconductors • Sensors • Electronics • Nanotechnology • Silicon • Spectroscopy • Thin Films • Design of Experiments • Simulations • Microfabrication • Optics • Cmos • Cvd • Research and Development • Program Development • Program Management • National Security

Industries

Research

Resumes

Resumes

Rebecca Nikolic Photo 1

Deputy Program Manager, Energy And Homeland Security

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Location:
8120 36Th Ave, Sacramento, CA 95824
Industry:
Research
Work:
Lawrence Livermore National Laboratory, Center for Micro and Nano Technology since Apr 2002
R&D Group Leader, MEMS, Electronics, Photonics
Education:
University of California, San Diego 1998 - 2002
PhD, Electrical Engineering
Skills:
R&D
Materials Science
Photonics
Mems
Characterization
Physics
Semiconductors
Sensors
Electronics
Nanotechnology
Silicon
Spectroscopy
Thin Films
Design of Experiments
Simulations
Microfabrication
Optics
Cmos
Cvd
Research and Development
Program Development
Program Management
National Security

Publications

Us Patents

Method To Planarize Three-Dimensional Structures To Enable Conformal Electrodes

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US Patent:
8314400, Nov 20, 2012
Filed:
Jan 27, 2011
Appl. No.:
13/014879
Inventors:
Rebecca J. Nikolic - Oakland CA, US
Adam M. Conway - Livermore CA, US
Robert T. Graff - Modesto CA, US
Catherine Reinhardt - Livermore CA, US
Lars F. Voss - Pleasanton CA, US
Qinghui Shao - Riverside CA, US
Assignee:
Lawrence Livermore National Security, LLC - Livermore CA
International Classification:
G01T 3/00
US Classification:
25039001
Abstract:
Methods for fabricating three-dimensional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars with cavity regions between the pillars. A first end of each pillar is in contact with the first layer. A segment is formed on the second end of each pillar. The cavity regions are filled with a fill material, which may be a functional material such as a neutron sensitive material. The fill material covers each segment. A portion of the fill material is etched back to produce an exposed portion of the segment. A first electrode is deposited onto the fill material and each exposed segment, thereby forming a conductive layer that provides a common contact to each the exposed segment. A second electrode is deposited onto the first layer.

Method For Manufacturing Solid-State Thermal Neutron Detectors With Simultaneous High Thermal Neutron Detection Efficiency (>50%) And Neutron To Gamma Discrimination (>1.0E4)

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US Patent:
8558188, Oct 15, 2013
Filed:
Apr 25, 2012
Appl. No.:
13/456182
Inventors:
Rebecca J. Nikolic - Oakland CA, US
Adam M. Conway - Livermore CA, US
Daniel Heineck - La Jolla CA, US
Lars F. Voss - Livermore CA, US
Tzu Fang Wang - Danville CA, US
Qinghui Shao - Fremont CA, US
Assignee:
Lawrence Livermore National Security, LLC - Livermore CA
International Classification:
G01T 3/00
US Classification:
25039001
Abstract:
Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>10) are provided. A structure is provided that includes a p+ region on a first side of an intrinsic region and an n+ region on a second side of the intrinsic region. The thickness of the intrinsic region is minimized to achieve a desired gamma discrimination factor of at least 1. 0E+04. Material is removed from one of the p+ region or the n+ region and into the intrinsic layer to produce pillars with open space between each pillar. The open space is filed with a neutron sensitive material. An electrode is placed in contact with the pillars and another electrode is placed in contact with the side that is opposite of the intrinsic layer with respect to the first electrode.

Semiconductor Materials Matrix For Neutron Detection

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US Patent:
20060255282, Nov 16, 2006
Filed:
Apr 27, 2006
Appl. No.:
11/414288
Inventors:
Rebecca Nikolic - Oakland CA, US
Chin Cheung - Lincoln NE, US
Tzu Wang - Danville CA, US
Catherine Reinhardt - Livermore CA, US
International Classification:
G01T 3/00
US Classification:
250390010
Abstract:
Semiconductor-based elements as an electrical signal generation media are utilized for the detection of neutrons. Such elements can be synthesized and used in the form of, for example, semiconductor dots, wires or pillars in the form of semiconductor substrates embedded in matrixes of high cross-section neutron converter materials that can emit charged particles upon interaction with neutrons. These charged particles in turn can generate electron-hole pairs and thus detectable electrical current and voltage in the semiconductor elements. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Energy Resolution In Semiconductor Gamma Radiation Detectors Using Heterojunctions And Methods Of Use And Preparation Thereof

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US Patent:
20090294680, Dec 3, 2009
Filed:
May 26, 2009
Appl. No.:
12/472081
Inventors:
Rebecca J. Nikolic - Oakland CA, US
Adam M. Conway - Dublin CA, US
Art J. Nelson - Trieste, IT
Stephen A. Payne - Castro Valley CA, US
International Classification:
G01T 1/24
H01L 21/00
US Classification:
25037009, 25037013, 438 57, 257E21002
Abstract:
In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Mixed Ionic-Electronic Conductor-Based Radiation Detectors And Methods Of Fabrication

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US Patent:
20130026364, Jan 31, 2013
Filed:
Apr 26, 2012
Appl. No.:
13/457396
Inventors:
Adam Conway - Livermore CA, US
Patrick R. Beck - Livermore CA, US
Robert T. Graff - Modesto CA, US
Art Nelson - Livermore CA, US
Rebecca J. Nikolic - Oakland CA, US
Stephen A. Payne - Castro Valley CA, US
Lars Voss - Livermore CA, US
Hadong Kim - Methuen MA, US
Assignee:
Lawrence Livermore National Security LLC - Livermore CA
International Classification:
G01T 1/16
C23C 14/48
H01B 13/00
B32B 9/00
B05D 5/12
US Classification:
2503361, 428696, 427 58, 216 13, 427523
Abstract:
A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

Three-Dimensional Boron Particle Loaded Thermal Neutron Detector

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US Patent:
20130075848, Mar 28, 2013
Filed:
Jul 18, 2012
Appl. No.:
13/552307
Inventors:
Rebecca J. Nikolic - Oakland CA, US
Adam M. Conway - Livermore CA, US
Robert T. Graff - Modesto CA, US
Joshua D. Kuntz - Livermore CA, US
Catherine Reinhardt - Livermore CA, US
Lars F. Voss - Livermore CA, US
Chin Li Cheung - Lincoln NE, US
Daniel Heineck - San Diego CA, US
Assignee:
Lawrence Livermore National Security, LLc - Livermore CA
International Classification:
H01L 31/08
H01L 31/18
US Classification:
257429, 438 37
Abstract:
Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically, methods to infiltrate, intersperse and embed the neutron nano-powders to form two-dimensional and/or three-dimensional charge sensitive platforms are specified. The use of nano-powders enables conformal contact with the entire charge-collecting structure regardless of its shape or configuration.

Three Dimensional Strained Semiconductors

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US Patent:
20130334541, Dec 19, 2013
Filed:
Jun 7, 2013
Appl. No.:
13/912885
Inventors:
Adam Conway - Livermore CA, US
Rebecca J. Nikolic - Oakland CA, US
Cedric Rocha Leao - Oakland CA, US
Qinghui Shao - Fremont CA, US
International Classification:
H01L 29/06
H01L 21/02
US Classification:
257 77, 257618, 257615, 257 76, 438 5
Abstract:
In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

Indirect Conversion Nuclear Battery Using Transparent Scintillator Material

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US Patent:
20220350039, Nov 3, 2022
Filed:
Jul 12, 2022
Appl. No.:
17/863164
Inventors:
- Livemore CA, US
Nerine Cherepy - Piedmont CA, US
John Winter Murphy - Mountain House CA, US
Rebecca J. Nikolic - Oakland CA, US
International Classification:
G01T 1/202
H01L 31/115
G01T 1/20
Abstract:
A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity. A thickness the scintillator material is sufficient to protect the photovoltaic portion from significant radiation damage.
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Rebecca J Nikolic from Oakland, CA, age ~50 Get Report