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Ramana M Murty

from Sunnyvale, CA
Age ~57
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Also known as:
Ramana V Murty, Ranana M Murty, Murty Ramana
Phone and address:
757 Sheraton Dr, Sunnyvale, CA 94087
Related to:
Vanisree Murty, 57V R MurtyM Mv Murty
Connected to:
Lalita C Murty, 84Lydia Murty, 39Madhavi Murty, 47Madhu M Murty, 47Melinda A Murty, 55Peter A Murty, 62Vabilisetti S Murty, 73Vandana Murty, 37Vijay N Murty, 57Justin J Murtz, 73

Ramana Murty Phones & Addresses

  • 757 Sheraton Dr, Sunnyvale, CA 94087
  • San Jose, CA
  • 26679 Agoura Rd, Calabasas, CA 91302
  • Ithaca, NY
  • 5530 Owensmouth Ave, Woodland Hills, CA 91367
  • Darien, IL
  • Naperville, IL

Professional Records

Medicine Doctors

Ramana Murty Photo 1

Ramana M. Murty

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Specialties:
Cardiovascular Disease, Internal Medicine
Work:
Harrison Community Hospital-Specialty Clinic
951 E Market St, Cadiz, OH 43907
(740) 942-6209 (phone), (740) 942-8633 (fax)

Trinity Professional GroupTrinity Family Care Center
401 Market St STE 200, Steubenville, OH 43952
(740) 282-5000 (phone), (740) 282-5233 (fax)

Trinity Professional Group
146 W 5 St, East Liverpool, OH 43920
(330) 382-0165 (phone), (330) 382-0275 (fax)
Education:
Medical School
Andhra Med Coll, Ntr Univ of Med Sci, Visakhapatnam, Ap, India
Graduated: 1973
Procedures:
Angioplasty
Echocardiogram
Pacemaker and Defibrillator Procedures
Cardiac Stress Test
Cardioversion
Conditions:
Acute Myocardial Infarction (AMI)
Angina Pectoris
Aortic Valvular Disease
Atrial Fibrillation and Atrial Flutter
Cardiac Arrhythmia
Languages:
English
Description:
Dr. Murty graduated from the Andhra Med Coll, Ntr Univ of Med Sci, Visakhapatnam, Ap, India in 1973. He works in Cadiz, OH and 2 other locations and specializes in Cardiovascular Disease and Internal Medicine. Dr. Murty is affiliated with East Liverpool City Hospital, East Ohio Regional Hospital, Harrison Community Hospital, Trinity Health System and Trinity Medical Center East.

Resumes

Resumes

Ramana Murty Photo 2

Interventional Cardiology

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Location:
San Francisco, CA
Industry:
Hospital & Health Care
Work:
Trinity Health System
Interventional Cardiology
Education:
Caltech 1989 - 1994
Doctorates, Doctor of Philosophy, Applied Physics, Philosophy Indian Institute of Technology, Bombay 1984 - 1988
Bachelors, Bachelor of Technology, Electronics Engineering, Electronics
Skills:
Semiconductor Lasers
Mbe and Mocvd of Semiconductors
Epitaxy
Design and Fabrication
Mbe and Mocvd
Metals and Dielectrics
Rf Test
Reliability Testing and Failure Analysis
Thin Fllm and Surface
Reliability Testing
Epitaxy and Devices
Thin Fllm and Surface Analysis Techniques
Computer Simulations of Materials Processing
Interests:
Software For Education
Ramana Murty Photo 3

Ramana Murty

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Ramana Murty Photo 4

Ramana Murty

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Ramana Murty Photo 5

Ramana Murty

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Ramana Murty Photo 6

Elementary School Teacher

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Work:

Elementary School Teacher

Business Records

Name / Title
Company / Classification
Phones & Addresses
Ramana M. Murty
CVMS SPECIALISTS, LC
Ramana Murty
RIVERSIDE MEDICAL, LLC
Ramana Murty
RIVERSIDE AT UNIVERSITY TOWN CENTER LLC
Ramana M. Murty
RIVERSIDE MEDICAL DEVELOPMENT LLC
Ramana M. Murty
MURTY FAMILY LIMITED LIABILITY COMPANY 2
Ramana M. Murty
MURTY FAMILY LIMITED LIABILITY COMPANY 1
Ramana M. Murty
RIVERSIDE MEDICAL SINCLAIR LLC
Ramana M. Murty
RIVERSIDE MEDICAL, INC

Publications

Us Patents

Three-Terminal Vertical Cavity Surface Emitting Laser (Vcsel) And A Method For Operating A Three-Terminal Vcsel

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US Patent:
20130177036, Jul 11, 2013
Filed:
Feb 26, 2013
Appl. No.:
13/777062
Inventors:
Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore, SG
Rashit Nabiev - Palo Alto CA, US
Ramana M.V. Murty - Sunnyvale CA, US
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:
H01S 5/183
US Classification:
372 4501
Abstract:
A three-terminal VCSEL is provided that has a reduced fall time that allows the VCSEL to be operated at higher speeds. Methods of operating the three-terminal VCSEL are also provided. The VCSEL can be operated at higher speeds without decreasing the optical output of the VCSEL when its in the logical HIGH state.

Semiconductor Device Having A Vertical Cavity Surface Emitting Laser (Vcsel) And A Protection Diode Integrated Therein And Having Reduced Capacitance To Allow The Vcsel To Achieve High Operating Speeds

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US Patent:
20130279531, Oct 24, 2013
Filed:
Jun 24, 2013
Appl. No.:
13/925324
Inventors:
- Singapore, SG
Ramana Murty - Sunnyvale CA, US
International Classification:
H01S 5/183
US Classification:
372 5011
Abstract:
A semiconductor device is provided that has a VCSEL and a protection diode integrated therein and that has an additional intrinsic layer. The inclusion of the additional intrinsic layer increases the width of the depletion region of the protection diode, which reduces the amount of capacitance that is introduced by the protection diode. Reducing the amount of capacitance that is introduced by the protection diode allows the VCSEL to operate at higher speeds.

Mesa Vertical-Cavity Surface-Emitting Laser

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US Patent:
20080298416, Dec 4, 2008
Filed:
May 30, 2008
Appl. No.:
12/129839
Inventors:
Leo M.F. Chirovsky - Bridgewater NJ, US
Ramana M.V. Murty - Sunnyvale CA, US
Assignee:
JDS Uniphase Corporation - Milpitas CA
International Classification:
H01S 5/00
US Classification:
372 5011, 372 50124
Abstract:
The present invention provides an improved mesa vertical-cavity surface-emitting laser (VCSEL), in which a first distributed Bragg reflector (DBR) mesa of semiconductor material is disposed on a top surface of an active layer. A contact annulus is disposed on a contact region of a top surface of the first DBR mesa, such that an inner circumference of the contact annulus defines a window region of the top surface of the first DBR mesa. A second DBR mesa of dielectric material is disposed on the window region. Whereas the first DBR mesa has a first reflectance at a lasing wavelength that is insufficient to sustain lasing in the active layer, the first DBR mesa and the second DBR mesa together have a total reflectance at the lasing wavelength that is sufficient to sustain lasing in the active layer under the window region.

Methods To Apply Microlens On Small Aperture Photodetectors And Vcsel For High Data Rate Applications

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US Patent:
20220209496, Jun 30, 2022
Filed:
Oct 25, 2021
Appl. No.:
17/509596
Inventors:
- Singapore, SG
Rashit Nabiev - San Jose CA, US
Ramana M.V. Murty - San Jose CA, US
Laura M. Giovane - San Jose CA, US
Assignee:
Broadcom International Pte. Ltd. - Singapore
International Classification:
H01S 5/02326
H01S 5/0239
H01S 5/02253
H01S 5/0234
H01L 31/18
H01L 31/0232
Abstract:
Data rate that can be supported by a photodetector can be limited by the aperture size of the photodetector. In some embodiments, the minimum aperture diameter can be about 30 um. This limitation is due, for example, to an inability of the optics to focus the beam to a smaller spot, and the mechanical tolerances of the assembly process. The techniques described in the present disclosure can reduce the optical spot size and improve on the mechanical tolerances that are achievable, thereby improving the photodetector and VCSEL manufacturing processes and systems. A photodetector or VCSEL system design with higher data rate and lower production cost can be achieved using the techniques described herein.

Optical Sensing Device Having Integrated Optics And Methods Of Manufacturing The Same

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US Patent:
20200209495, Jul 2, 2020
Filed:
Mar 9, 2020
Appl. No.:
16/812570
Inventors:
- Singapore, SG
Ramana Murty - San Jose CA, US
Ching Kean Chia - Singapore, SG
International Classification:
G02B 6/42
H01L 31/0203
H01L 31/0232
Abstract:
The present disclosure provides a communication system, a sensing device, and a semiconductor device, among other things. One example of the disclosed sensing device includes a semiconductor die having a photodetector. an optical element optically coupled to and disposed on the photodetector, at least one support structure substantially surrounding the optical element, and a top metal portion disposed on the semiconductor die adjacent to but distanced away from the optical element and the at least one support structure.

Optical Sensing Device Having Integrated Optics And Methods Of Manufacturing The Same

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US Patent:
20180182906, Jun 28, 2018
Filed:
Dec 23, 2016
Appl. No.:
15/389934
Inventors:
- Singapore, SG
Ramana Murty - San Jose CA, US
Ching Kean Chia - Singapore, SG
International Classification:
H01L 31/0232
G02B 6/42
H01L 31/02
H04B 10/40
Abstract:
The present disclosure provides a communication system, a sensing device, and a semiconductor device, among other things. One example of the disclosed sensing device includes a semiconductor die having a photodetector, an optical element optically coupled to and disposed on the photodetector, at least one support structure substantially surrounding the optical element, and a top metal portion disposed on the semiconductor die adjacent to but distanced away from the optical element and the at least one support structure.

Device And Method For Making Photomask Assembly And Photodetector Device Having Light-Collecting Optical Microstructure

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US Patent:
20160170296, Jun 16, 2016
Filed:
Mar 29, 2014
Appl. No.:
14/229859
Inventors:
- Singapore, SG
Laura M. Giovane - Sunnyvale CA, US
Ramana M.V. Murty - Sunnyvale CA, US
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:
G03F 1/50
G03F 1/80
G03F 1/76
Abstract:
An optical mask can be made by providing a transparent mask substrate; depositing a first layer of opaque material, forming an aperture in the first layer; depositing a second layer of transparent material, depositing a third layer of transparent material; patterning the third layer to produce a disc-shaped region, heating the third layer until the disc-shaped region reflows into a lens-shaped region and cross-links, depositing a fourth layer, patterning the fourth layer to produce a cavity extending to the surface of the lens-shaped region, and dry etching the end of the cavity until the second layer develops a shape corresponding to the lens-shaped region.

Vertical Cavity Surface Emitting Laser With An Integrated Protection Diode

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US Patent:
20140233595, Aug 21, 2014
Filed:
Feb 15, 2013
Appl. No.:
13/768780
Inventors:
- Singapore, SG
Ramana Murty - Sunnyvale CA, US
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd. - Singapore
International Classification:
H01S 5/026
H01L 33/60
US Classification:
372 3809, 438 29
Abstract:
A semiconductor device includes a vertical cavity surface emitting laser (VCSEL) with an integrated protection diode arranged between the VCSEL and an emitting surface. By locating the protection diode above the VCSEL, a minimal increase in substrate area is consumed to protect the VCSEL from electrostatic discharge events. A relatively small capacitance introduced by the protection diode, is controllably adjusted by one of the radial size of the protection diode and the thickness of the intrinsic layer therein. The relatively small capacitance introduced by the protection diode enables the VCSEL to operate at data rates above 10 Gb/s.
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Ramana M Murty from Sunnyvale, CA, age ~57 Get Report