Inventors:
Miroslav Micovic - Thousand Oaks CA, US
Peter Deelman - Calabasas CA, US
Yakov Royter - Santa Monica CA, US
Assignee:
HRL Laboratories, LLC - Malibu CA
International Classification:
C30B 25/02
US Classification:
117 95, 117 9, 117 92, 117 97, 117103, 117108, 438423, 438480, 438766, 438514, 438516, 257E21005, 257E21041, 257E21049, 257E21095, 257E21096
Abstract:
The present invention is directed to a method for fabricating a thermal management substrate having a Silicon (Si) layer on a polycrystalline diamond film, or on a diamond-like-carbon (DLC) film. The method comprises acts of fabricating a separation by implantation of oxygen (SIMOX) wafer; depositing a polycrystalline diamond film onto the SIMOX wafer; and removing various layers of the SIMOX wafer to leave a Si overlay layer that is epitaxially fused with the polycrystalline diamond film. In the case of the DLC film, the method comprises acts of ion-implanting a Si wafer; depositing an amorphous DLC film onto the Si wafer; and removing various layers of the Si wafer to leave a Si overlay structure epitaxially fused with the DLC film.