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Nigel John Cockroft

from Santa Cruz, CA
Age ~62

Nigel Cockroft Phones & Addresses

  • 9255 Empire Grade, Santa Cruz, CA 95060 (831) 334-6652
  • Scotts Valley, CA
  • Jacksonville, FL
  • 15921 Cherry Blossom Ln, Los Gatos, CA 95032 (408) 356-1193
  • Santa Fe, NM
  • Los Alamos, NM
  • Lafayette, CO
  • 9255 Empire Grade, Santa Cruz, CA 95060 (831) 426-8714

Education

Degree: Associate degree or higher

Publications

Us Patents

Optically Integrating Pixel Microstructure

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US Patent:
20020003928, Jan 10, 2002
Filed:
Dec 15, 2000
Appl. No.:
09/738607
Inventors:
William Bischel - Menlo Park CA, US
David Deacon - Los Altos CA, US
Nigel Cockroft - Los Gatos CA, US
Markus Hehlen - Los Gatos CA, US
David Wagner - San Jose CA, US
Richard Tompane - Los Altos CA, US
Simon Field - Palo Alto CA, US
Assignee:
Gemfire Corporation
International Classification:
G02B006/26
US Classification:
385/039000, 385/027000, 385/047000
Abstract:
An integrated optical microstructure includes a substrate carrying an optical waveguide and supporting a medium disposed to receive optical energy from the waveguide. The medium includes an optical re-radiator such as a phosphor, which re-radiates optical energy in response to optical energy received from the waveguide. The structure further includes a reflector disposed to redirect some of the input optical energy emanating from the medium back into the medium, to achieve spatial confinement of the input light delivered by the input waveguide. The structure can thereby increase the efficiency of the light conversion processes of re-radiating materials. An aperture in the reflector permits optical energy emitted by the re-radiator to emerge from the structure and to propagate in a preferred direction, such as toward a viewer or sensor. The structure is useful for increasing the brightness of various kinds of small emissive elements which are excited by light delivered from an integrated optical waveguide, including pixels in an information display.

Optically Integrating Pixel Microstructure

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US Patent:
62087916, Mar 27, 2001
Filed:
Apr 19, 1999
Appl. No.:
9/295244
Inventors:
William K. Bischel - Menlo Park CA
David A.G. Deacon - Los Altos CA
Nigel J. Cockroft - Los Gatos CA
Markus P. Hehlen - Los Gatos CA
David K. Wagner - San Jose CA
Richard B. Tompane - Los Altos CA
Simon J. Field - Palo Alto CA
Assignee:
Gemfire Corporation - Palo Alto CA
International Classification:
G02B6/10
US Classification:
385129
Abstract:
An integrated optical microstructure includes a substrate carrying an optical waveguide and supporting a medium disposed to receive optical energy from the waveguide. The medium includes an optical re-radiator such as a phosphor, which reradiates optical energy in response to optical energy received from the waveguide. The structure further includes a reflector disposed to redirect some of the input optical energy emanating from the medium back into the medium, to achieve spatial confinement of the input light delivered by the input waveguide. The structure can thereby increase the efficiency of the light conversion processes of re-radiating materials. An aperture in the reflector permits optical energy emitted by the re-radiator to emerge from the structure and to propagate in a preferred direction, such as toward a viewer or sensor. The structure is useful for increasing the brightness of various kinds of small emissive elements which are excited by light delivered from an integrated optical waveguide, including pixels in an information display.

Minimizing Radiation Damage In Nonlinear Optical Crystals

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US Patent:
58053298, Sep 8, 1998
Filed:
Apr 10, 1996
Appl. No.:
8/630305
Inventors:
D. Wayne Cooke - Santa Fe NM
Bryan L. Bennett - Los Alamos NM
Nigel J. Cockroft - Santa Fe NM
Assignee:
The Regents of the University of California - Los Alamos NM
International Classification:
G02F 103
G02F 129
H01L 2302
US Classification:
359254
Abstract:
Methods are disclosed for minimizing laser induced damage to nonlinear crystals, such as KTP crystals, involving various means for electrically grounding the crystals in order to diffuse electrical discharges within the crystals caused by the incident laser beam. In certain embodiments, electrically conductive material is deposited onto or into surfaces of the nonlinear crystals and the electrically conductive surfaces are connected to an electrical ground. To minimize electrical discharges on crystal surfaces that are not covered by the grounded electrically conductive material, a vacuum may be created around the nonlinear crystal.

Minimizing Radiation Damage In Nonlinear Optical Crystals

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US Patent:
58808710, Mar 9, 1999
Filed:
Jan 26, 1998
Appl. No.:
/013323
Inventors:
D. Wayne Cooke - Santa Fe NM
Bryan L. Bennett - Los Alamos NM
Nigel J. Cockroft - Santa Fe NM
Assignee:
The Regents of The University of California - Los Alamos NM
International Classification:
G02F 103
US Classification:
359254
Abstract:
Methods are disclosed for minimizing laser induced damage to nonlinear crystals, such as KTP crystals, involving various means for electrically grounding the crystals in order to diffuse electrical discharges within the crystals caused by the incident laser beam. In certain embodiments, electrically conductive material is deposited onto or into surfaces of the nonlinear crystals and the electrically conductive surfaces are connected to an electrical ground. To minimize electrical discharges on crystal surfaces that are not covered by the grounded electrically conductive material, a vacuum may be created around the nonlinear crystal.

Optical Amplification At The 1.31 Wavelength

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US Patent:
52872173, Feb 15, 1994
Filed:
Mar 30, 1993
Appl. No.:
8/039676
Inventors:
Nigel J. Cockroft - Los Alamos NM
Assignee:
The United States of America as represented by the United States
Department of Energy - Washington DC
International Classification:
H01S 317
US Classification:
359341
Abstract:
An optical amplifier operating at the 1. 31. mu. m wavelength for use in such applications as telecommunications, cable television, and computer systems. An optical fiber or other waveguide device is doped with both Tm. sup. 3+ and Pr. sup. 3+ ions. When pumped by a diode laser operating at a wavelength of 785 nm, energy is transferred from the Tm. sup. 3+ ions to the Pr. sup. 3+ ions, causing the Pr. sup. 3+ ions to amplify at a wavelength of 1. 31.
Nigel John Cockroft from Santa Cruz, CA, age ~62 Get Report