Neal R Rueger

6606802, Aug 19, 2003

Nov 30, 2001

09/998078

Gurtej S. Sandhu - Boise ID
Michael Li - Boise ID
Neal R. Rueger - Boise ID

Micron Technology Inc. - Boise ID

F26B 300

34448, 34 85, 34230, 34232

Method and apparatus are disclosed for improving the cleaning efficiency of a high density plasma system by introducing thermally hot gases to heat downstream chamber walls to improve the fluorine attack on deposit coatings. In certain embodiments of the invention, the cleaning gas and thermally hot gas are allowed into the region of the high vacuum pump to provide cleaning of the high vacuum pump.

6627465, Sep 30, 2003

Aug 30, 2001

09/945161

Gurtej Singh Sandhu - Boise ID
Sujit Sharan - Chandler AZ
Neal R. Rueger - Boise ID
Allen P. Mardian - Boise ID

Micron Technology, inc. - Bosie ID

H01L 2166

438 14, 430 15

Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

6660657, Dec 9, 2003

Aug 7, 2000

09/633556

Gurtej S. Sandhu - Boise ID
John T. Moore - Boise ID
Neal R. Rueger - Boise ID

Micron Technology, Inc. - Boise ID

H01L 2131

438775, 438777, 438776

The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400Â C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer.

6660658, Dec 9, 2003

Jul 26, 2002

10/205235

Gurtej S. Sandhu - Boise ID
John T. Moore - Boise ID
Neal R. Rueger - Boise ID

Micron Technology, Inc. - Boise ID

H01L 2131

438775, 438776, 438777

The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400Â C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer.

6866900, Mar 15, 2005

Jun 11, 2003

10/460624

Weimin Li - Boise ID, US
Neal R. Rueger - Boise ID, US

Micron Technology, Inc. - Boise ID

C23C016/00

427534, 4272481, 427299, 427331, 427337, 427579, 427237

The invention encompasses a method for sequentially processing separate sets of wafers within a chamber. Each set is subjected to plasma-enhanced deposition of material within the chamber utilizing a plasma that is primarily inductively coupled. After the plasma-enhanced deposition, and while the set remains within the chamber, the plasma is changed to a primarily capacitively coupled plasma. The cycling of the plasma from primarily inductively coupled to primarily capacitively coupled can increase the ratio of processed wafers to plasma reaction chamber internal sidewall cleanings that can be obtained while maintaining low particle counts on the processed wafers.

6908807, Jun 21, 2005

Mar 26, 2002

10/108013

Neal R. Rueger - Boise ID, US

Micron Technology, Inc. - Boise ID

H01L021/8238

438221, 438296, 438424

The invention includes a method of forming a semiconductor construction. A semiconductor substrate is placed within a reaction chamber. The substrate comprises a center region and an edge region surrounding the center region. The substrate comprises openings within the center region, and openings within the edge region. While the substrate is within the reaction chamber, a layer of insulative material is formed across the substrate. The layer is thicker over the one of the center region and edge region than over the other of the center region and edge region. The layer is exposed to an etch which removes the insulative material faster from over the one or the center region and edge region than from over the other of the center region and edge region.

6936547, Aug 30, 2005

Oct 31, 2002

10/284681

Weimin Li - Boise ID, US
Neal R. Rueger - Boise ID, US
Li Li - Meridian ID, US
Ross S. Dando - Nampa ID, US
Kevin T. Hamer - Meridian ID, US
Allen P. Mardian - Boise ID, US

Micron Technology, Inc.. - Boise ID

H01L021/31

438758, 438680

The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.

6950178, Sep 27, 2005

Oct 9, 2003

10/682017

Neal R. Rueger - Boise ID, US
Kevin T. Hamer - Meridian ID, US

Micron Technology, Inc. - Boise ID

G01J003/443

356 72, 356316, 438 16

A method and system are presented for monitoring the optical emissions associated with a plasma used in integrated circuit fabrication. The optical emissions are processed by an optical spectrometer to obtain a spectrum. The spectrum is analyzed to determine the presence of particular disassociated species which are indicative of the presence of a suitable plasma and which are desired for a deposition, etching, or cleaning process.