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Marty W Degroot

from Hockessin, DE
Age ~47
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Also known as:
Marty William Degroot
Related to:
Rhiannon HughesKatie Ann Jackson, 37Elyshia Degroot, 55Elyshia M Degroot, 46Elyshia M Degroot
Connected to:
Al J Degroot, 90Alexander Degroot, 54Amanda K Degroot, 34Ary M Degroot, 75Colette Degroot, 43Dylan Degroot, 37Elisabeth A Degroot, 29Elizabeth Degroot, 61Ellen Degroot, 98Elyse D Degroot, 66

Marty Degroot Phones & Addresses

  • Hockessin, DE
  • 218 E Union Dr, Middletown, DE 19709 (302) 378-3803
  • 4604 Pinewood Dr, Midland, MI 48640
  • 61 Schooner Ct, Richmond, CA 94804
  • Minneapolis, MN
  • New Castle, DE

Publications

Us Patents

Photovoltaic Device With Transparent, Conductive Barrier Layer

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US Patent:
8604336, Dec 10, 2013
Filed:
Jan 12, 2011
Appl. No.:
13/005422
Inventors:
Rebekah K. Feist - Midland MI, US
Marty W. DeGroot - Midland MI, US
Todd R. Bryden - Midland MI, US
Joseph George - Midland MI, US
Assignee:
Dow Global Technologies LLC - Midland MI
International Classification:
H01L 31/00
H01L 21/00
US Classification:
136256, 438 95
Abstract:
The present invention provides strategies for providing photovoltaic devices that are more resistant to moisture and/or oxygen degradation and the accompanying migration of key elements such as Na, Li, and the lanthanoid series of elements from the absorber layer and that have enhanced service life and improved performance. These strategies are particularly useful in the fabrication of chalcogenide-based photovoltaic devices such as chalcogenide-based solar cells. These strategies incorporate a barrier region between the photovoltaic absorber region and the front side collection grid. The barrier region keeps moisture and/or oxygen from the absorber layer and contains key elements such as Na, Li, and Ln in the absorber layer. As a result, the absorber layer retains its performance capabilities for an extended period of time.

Method Of Forming A Protective Layer On Thin-Film Photovoltaic Articles And Articles Made With Such A Layer

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US Patent:
20100243046, Sep 30, 2010
Filed:
Mar 23, 2010
Appl. No.:
12/729547
Inventors:
Marty W. Degroot - Midland MI, US
Rebekah K. Feist - Midland MI, US
Mark T. Bernius - Midland MI, US
William F. Banholzer - Freeland MI, US
Chung-Hei Yeung - Midland MI, US
Attiganal N. Sreeram - Midland MI, US
International Classification:
H01L 31/0216
H01L 31/18
US Classification:
136256, 438 80, 257E31119
Abstract:
Chalcogenide based photovoltaic devices cells with good resistance to environmental elements can be formed by direct low temperature deposition of inorganic barrier layers onto the film. A unique multilayer barrier can be formed in a single step when reactive sputtering of the silicon nitride onto an inorganic oxide top layer of the PV device.

Silylimidazolium Salt Complexes

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US Patent:
20110034642, Feb 10, 2011
Filed:
Apr 16, 2009
Appl. No.:
12/937496
Inventors:
Marty W. DeGroot - Midland MI, US
Assignee:
Dow Global Technologies Inc. - Midland MI
International Classification:
C08L 63/00
C07F 7/10
US Classification:
525523, 548110
Abstract:
The present invention relates to silylimidazolium salt complexes and their uses as catalysts including tunable latent catalysts for curing epoxy resins.

Moisture Resistant Photovoltaic Devices With Exposed Conductive Grid

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US Patent:
20110168243, Jul 14, 2011
Filed:
Jan 12, 2011
Appl. No.:
13/005426
Inventors:
Paul R. Elowe - Midland MI, US
Marty W. DeGroot - Midland MI, US
Michael E. Mills - Midland MI, US
Matt A. Stempki - Midland MI, US
International Classification:
H01L 31/06
H01L 31/18
US Classification:
136255, 438 95, 257E31126
Abstract:
The present invention provides strategies for improving the adhesion among two or more of transparent conducting oxides, electrically conductive grid materials, and dielectric barrier layers. As a consequence, these strategies are particularly useful in the fabrication of heterojunction photovoltaic devices such as chalcogenide-based solar cells. When the barrier is formed and then the grid is applied to vias in the barrier, the structure has improved moisture barrier resistance as compared to where the barrier is formed over or around the grid. Adhesion is improved to such a degree that grid materials and dielectric barrier materials can cooperate to provide a hermetic seal over devices to protect against damage induced by environmental conditions, including damage due to water intrusion. This allows the collection grids to be at least partially exposed above the dielectric barrier, making it easy to make electronic connection to the devices.

Moisture Resistant Photovoltaic Devices With Improved Adhesion Of Barrier Film

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US Patent:
20110192453, Aug 11, 2011
Filed:
Jan 12, 2011
Appl. No.:
13/005420
Inventors:
Marty W. DeGroot - Midland MI, US
Paul R. Elowe - Midland MI, US
International Classification:
H01L 31/0216
H01L 31/18
US Classification:
136256, 438 57, 257E31126
Abstract:
The present invention provides strategies for improving the adhesion between a barrier region, a transparent conductive region, and/or an electrically conductive grid through the use of an adhesion promoting region. The adhesion promoting region is optically transmissive and comprises a metal layer, a metal nitride layer, a metal carbide layer, or a combination thereof and preferably comprises at least one of Cr, Ti, Ta, and Zr or a combination thereof. These strategies are particularly useful in the fabrication of heterojunction photovoltaic devices such as chalcogenide-based solar cells. Adhesion is improved to such a degree that grid materials and dielectric barrier materials can cooperate to provide a hermetic seal over devices to protect against damage induced by environmental conditions, including damage due to water intrusion. The adhesion promoting region also serves as a barrier to the migration of Na, Li, and the lanthanoid series of elements.

Alkoxylation Processes And Catalysts Therefor

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US Patent:
20110297877, Dec 8, 2011
Filed:
Feb 25, 2010
Appl. No.:
13/142060
Inventors:
Tina L. Arrowood - Coleman MI, US
Marty W. Degroot - Midland MI, US
Paul R. Elowe - Midland MI, US
Derrick W. Flick - Midland MI, US
Jason C. MacDonald - Bay City MI, US
Peter N. Nickias - Midland MI, US
Daniel E. Verral - Midland MI, US
Assignee:
Dow Global Technologies LLC - Midland MI
International Classification:
C09K 3/00
US Classification:
25218212
Abstract:
A process of contacting an alkylene oxide with 2-methoxy-1-propanol (PM1) in the presence of an oligomeric Schiff base metal complex catalyst is disclosed. Further, a process involving contacting an alkylene oxide with an alkyl alcohol using an oligomeric Schiff base metal complex as a catalyst is also disclosed. Additionally, novel compositions which can be used as catalysts in processes involving the contacting of an alkyl alcohol with an alkylene oxide are also disclosed.

Group Iib/Va Semiconductors Suitable For Use In Photovoltaic Devices

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US Patent:
20110309477, Dec 22, 2011
Filed:
Jun 15, 2011
Appl. No.:
13/160681
Inventors:
Gregory M. Kimball - Pasadena CA, US
Marty W. DeGroot - Midland MI, US
Nathan S. Lewis - La Canada CA, US
Harry A. Atwater - South Pasadena CA, US
International Classification:
H01L 31/18
H01L 29/24
US Classification:
257613, 438 93, 257E31026, 257E291
Abstract:
The present invention relates to devices, particularly photovoltaic devices, incorporating Group IIB/VA semiconductors such phosphides, arsenides, and/or antimonides of one or more of Zn and/or Cd. In particular, the present invention relates to methodologies, resultant products, and precursors thereof in which electronic performance of the semiconductor material is improved by causing the Group IIB/VA semiconductor material to react with at least one metal-containing species (hereinafter co-reactive species) that is sufficiently co-reactive with at least one Group VA species incorporated into the Group IIB/VA semiconductor as a lattice substituent (recognizing that the same and/or another Group VA species also optionally may be incorporated into the Group IIB/VA semiconductor in other ways, e.g., as a dopant or the like).

Thin Film Solar Cell Processing And Testing Method And Equipment

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US Patent:
20130122616, May 16, 2013
Filed:
Jul 29, 2011
Appl. No.:
13/810371
Inventors:
Marty W. Degroot - Midland MI, US
Narayan Ramesh - Midland MI, US
Stephen J. Marinella - Chandler AZ, US
Zachary J. Marinella - Chandler AZ, US
David J. Perkon - Mesa AZ, US
Jeffrey P. Wilkinson - Tempe AZ, US
International Classification:
H01L 21/66
US Classification:
438 17, 118712
Abstract:
A method of providing a plurality of classified photovoltaic articles, including the steps of providing a first photo-voltaic element that includes a plurality of photovoltaic articles on a continuous flexible substrate, forming a electrically insulating material on the first photovoltaic element at one or more predetermined locations, separating adjacent photovoltaic articles from each other, determining an efficiency of each photovoltaic article by measuring its current-voltage characteristics, and classifying each photovoltaic article according to its efficiency.
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Marty W Degroot from Hockessin, DE, age ~47 Get Report