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Manny Sieradzki

from Georgetown, MA
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Connected to:
Frank J Sieradzki, 62James P Sieradzki, 47Karl Sieradzki, 76Paulina Sieradzy, 35Raymond R Sieradzan, 65Patrick W Sierak, 56James L Sierakowski, 68John F Sierakowski, 79Mark J Sierakowski, 67Paige Sierakowski, 34

Manny Sieradzki Phones & Addresses

  • Georgetown, MA
  • Boca Raton, FL

Work

Company: Diamond solar group Aug 2009 Position: President

Skills

Manufacturing

Industries

Electrical/Electronic Manufacturing

Resumes

Resumes

Manny Sieradzki Photo 1

President

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Location:
803 Summer St, Manchester, MA 01944
Industry:
Electrical/Electronic Manufacturing
Work:
Diamond Solar Group
President
Axcelis Technologies 2006 - 2009
V.p Engineering New Products
Diamond Semiconductor Group 1991 - 2005
President
Skills:
Manufacturing

Business Records

Name / Title
Company / Classification
Phones & Addresses
Manny Sieradzki
President
Diamond Semiconductor Group
Semiconductors · Research Service
30 Blackburn Ctr, Gloucester, MA 01930
(978) 281-4223, (978) 281-6651
Manny Sieradzki
Mbr
Diamond Solar Group, LLC
Mfg Electrical Equipment/Supplies
460 Boston St, Topsfield, MA 01983
Manny Sieradzki
President
DIAMOND SEMICONDUCTOR GROUP, INC
460 Boston St 1A-1, Topsfield, MA 01983
803 Summer St, Manchester, MA
Manny Sieradzki
President
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC
Manufacture, Sales And Service Of Semiconductor Equipment. · Mfg and Services Semiconductor Processing Equipment · Mfg Semiconductors/Related Devices Whol Electronic Parts/Equipment · Semiconductors and Related Dev
35 Dory Rd, Gloucester, MA 01930
35 Dory Rd  , Gloucester, MA 01930
1209 Orange St  , Wilmington, DE 19801
2338 W Royal Palm Rd STE J, Phoenix, AZ 85021
(978) 282-2000, (978) 281-6883, (978) 283-5391, (978) 283-0445
Manny Sieradzki
Manager
DIAMOND SEMICONDUCTOR GROUP, LLC

Publications

Us Patents

Wafer Handling Apparatus And Method

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US Patent:
7059817, Jun 13, 2006
Filed:
Nov 27, 2002
Appl. No.:
10/307022
Inventors:
Manny Sieradzki - Gloucester MA, US
Nicholas R. White - Manchester MA, US
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
B65G 49/07
US Classification:
414217, 414805, 414939
Abstract:
A high-speed wafer-processing apparatus and method that employs a vacuum chamber having at least two wafer transport robots and a process station. The vacuum chamber interfaces with a number of single-wafer load locks that are loaded and unloaded one wafer at a time by a robot in atmosphere. Four load locks are sized to allow for a gentle vacuum cycling of each wafer without significant pumpdown delays. The robots in the vacuum chamber move wafers sequentially from one of the load locks to a process station for processing and then to another one of the load locks for unloading by the atmospheric robot.

Ion Implanter Having Combined Hybrid And Double Mechanical Scan Architecture

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US Patent:
7586111, Sep 8, 2009
Filed:
Jul 31, 2007
Appl. No.:
11/831744
Inventors:
Manny Sieradzki - Manchester MA, US
Patrick Splinter - Middleton MA, US
Bo H. Vanderberg - Gloucester MA, US
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
H01J 37/317
H01J 29/51
G21K 1/08
US Classification:
25049221, 2504922, 250281, 250282, 250397, 250396 R
Abstract:
A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

Broad Ribbon Beam Ion Implanter Architecture With High Mass-Energy Capability

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US Patent:
7705328, Apr 27, 2010
Filed:
Oct 31, 2007
Appl. No.:
11/932117
Inventors:
Shu Satoh - Byfield MA, US
Manny Sieradzki - Georgetown MA, US
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
G21K 5/10
H01J 37/08
US Classification:
25049221, 250396 R, 2504922, 2504923, 250423 R, 250427, 250398, 250396 ML
Abstract:
A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h) and a long dimension (w) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h) and a long dimension, width (w).

Extraction Electrode Manipulator

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US Patent:
7842931, Nov 30, 2010
Filed:
Sep 25, 2008
Appl. No.:
12/238265
Inventors:
Shu Satoh - Byfield MA, US
John Adamik - Byfield MA, US
Manny Sieradzki - Georgetown MA, US
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
H01J 37/08
US Classification:
250423R, 25049221
Abstract:
An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface.

System And Method Of Controlling Broad Beam Uniformity

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US Patent:
7858955, Dec 28, 2010
Filed:
Jun 25, 2008
Appl. No.:
12/145713
Inventors:
Shu Satoh - Byfield MA, US
Edward C. Eisner - Lexington MA, US
Manny Sieradzki - Manchester MA, US
Assignee:
Axcelis Technologies, Inc. - Beverly MA
International Classification:
H01J 27/02
H01J 27/00
US Classification:
25049221, 250285, 250288, 250396 R, 250396 ML, 250423 R, 250424
Abstract:
An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

Ion Implanter Having Combined Hybrid And Double Mechanical Scan Architecture

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US Patent:
8124947, Feb 28, 2012
Filed:
Sep 4, 2009
Appl. No.:
12/554277
Inventors:
Manny Sieradzki - Manchester MA, US
Patrick Splinter - Middleton MA, US
Bo H Vanderberg - Gloucester MA, US
Assignee:
Axcelis Technologies Inc. - Beverly MA
International Classification:
H01J 37/317
H01J 29/51
G21K 1/08
US Classification:
25049221, 2504922, 250281, 250282, 250397, 250396 R
Abstract:
A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.

Double Ended Electrode Manipulator

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US Patent:
20130270450, Oct 17, 2013
Filed:
Apr 12, 2013
Appl. No.:
13/862058
Inventors:
Jeannot Morin - Intervale NH, US
Manny Sieradzki - Georgetown MA, US
Joseph C. Olson - Beverly MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/30
US Classification:
250396 R
Abstract:
An electrode adjustment method and apparatus are disclosed for use in workpiece processing. The assembly may include an electrode assembly having first and second ends. First and second manipulators may be coupled to the first and second ends. The manipulators may be used to selectively impart movement to the first and second ends of the electrode assembly to adjust one or more properties of an ion beam passing through the electrodes. The first and second manipulators may be independently actuatable so that the first and second ends of the electrode can be adjusted independent of one another. Methods of using the disclosed apparatus are also disclosed.

Inductively Coupled Plasma Ion Source With Multiple Antennas For Wide Ion Beam

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US Patent:
20140042337, Feb 13, 2014
Filed:
Aug 7, 2013
Appl. No.:
13/961060
Inventors:
Joseph C. Olson - Beverly MA, US
Edward W. Bell - Newbury MA, US
Manny Sieradzki - Georgetown MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 27/16
US Classification:
250424, 250423 R
Abstract:
A wide ion beam source includes a plurality of RF windows arranged in a predetermined relationship, a single plasma chamber disposed on a first side of the plurality of RF windows, a plurality of RF antennas, each RF antenna of the plurality of RF antennas disposed on a second side of a respective RF window of the plurality of RF windows, the second side being opposite the first side, and a plurality of RF sources, each RF source coupled to a respective RF antenna of the plurality of RF antennas, wherein a difference in frequency of a first RF signal produced by a first RF source coupled to a first RF antenna from that of a second RF signal produced by a second RF source coupled to an RF antenna adjacent to the first RF antenna is greater than 10 kHz.
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Manny Sieradzki from Georgetown, MA Get Report