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Ludovic A Godet

from Menlo Park, CA
Age ~45
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Related to:
Paul C Godet, 38Vincett U Godet, 68
Connected to:
Anne J Godet, 73Marie L Godet, 77Ralph A Godet, 58Robert C Godett, 49Jared C Godette, 32Ozell F Godette, 90James Godey, 61Tim G Godfray, 69Charles A Godfred, 52Lindsay S Godfree, 72

Ludovic Godet Phones & Addresses

  • Menlo Park, CA
  • Sunnyvale, CA
  • 66 Beacon St, Boston, MA 02108 (857) 350-3577
  • 7 Oakhurst Ter, North Reading, MA 01864 (978) 207-1331
  • Wakefield, MA
  • San Jose, CA
  • Beverly, MA

Work

Company: Applied materials 2010 Address: Boston, MA Position: R&d senior applications engineering manager

Education

Degree: PhD School / High School: Université de Nantes 2003 to 2006 Specialities: Plasma Physics, Thin Film

Skills

Thin Films • Semiconductors • Characterization • Plasma Physics • Materials Science • Semiconductor Industry • R&D • Electronics • Metrology • Design of Experiments • Research and Development • Cmos • Photolithography • Silicon • Engineering Management • Nanotechnology • Microelectronics • Photovoltaics • Chemical Vapor Deposition • Selective Deposition • Afm • Euv Resist • New Business Opportunities • Cvd • Battery Technology • Led Technology • Tem • Sims • Fcvd • Atomic Layer Deposition • Hydrophobicity • Business Strategy • Mems • Xps • Gapfill • Buisness Development • Cross Functional Team Leadership • Leadership • Competitive Analysis • Strategic Partnerships • Process Integration

Languages

English • French

Awards

Outstanding technologist award - Gary di...

Industries

Semiconductors

Resumes

Resumes

Ludovic Godet Photo 1

Senior Director Advanced Technologies, Office Of The Chief Technology Officer

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Location:
730 17Th Ave, Menlo Park, CA 94025
Industry:
Semiconductors
Work:
Applied Materials - Boston, MA since 2010
R&D Senior Applications Engineering Manager
Varian Semiconductor - Boston, MA and Nantes, France 2002 - 2010
Various Roles - R&D Engineering & Engineering Management
Laboratoire de Physique des Isolants et d'Optronique - University of Nantes, France 2002 - 2002
Researcher
Education:
Université de Nantes 2003 - 2006
PhD, Plasma Physics, Thin Film Université de Nantes 2001 - 2002
Master, Physics
Skills:
Thin Films
Semiconductors
Characterization
Plasma Physics
Materials Science
Semiconductor Industry
R&D
Electronics
Metrology
Design of Experiments
Research and Development
Cmos
Photolithography
Silicon
Engineering Management
Nanotechnology
Microelectronics
Photovoltaics
Chemical Vapor Deposition
Selective Deposition
Afm
Euv Resist
New Business Opportunities
Cvd
Battery Technology
Led Technology
Tem
Sims
Fcvd
Atomic Layer Deposition
Hydrophobicity
Business Strategy
Mems
Xps
Gapfill
Buisness Development
Cross Functional Team Leadership
Leadership
Competitive Analysis
Strategic Partnerships
Process Integration
Languages:
English
French
Awards:
Outstanding Technologist Award
Gary Dickerson CEO VSEA
Outstanding Technologist Award: "In recognition of the outstanding work that Ludovic Godet have done in investigating and developing new technologies that enable our growth opportunities for Varian"

Publications

Us Patents

Technique For Monitoring And Controlling A Plasma Process

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US Patent:
7476849, Jan 13, 2009
Filed:
Mar 10, 2006
Appl. No.:
11/371907
Inventors:
Ludovic Godet - Beverly MA, US
Vassilis Panayotis Vourloumis - Peabody MA, US
Vikram Singh - North Andover MA, US
Ziwei Fang - Beverly MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 49/40
G01N 27/26
G01N 33/00
US Classification:
250287, 250288, 250299, 250281, 250282, 31511121, 31511131
Abstract:
An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.

Closed Loop Control And Process Optimization In Plasma Doping Processes Using A Time Of Flight Ion Detector

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US Patent:
7586100, Sep 8, 2009
Filed:
Feb 12, 2008
Appl. No.:
12/029710
Inventors:
Deven M. Raj - Wenham MA, US
Ludovic Godet - Wakefield MA, US
Bernard Lindsay - Danvers MA, US
Timothy Miller - Ipswich MA, US
George Papasouliotis - North Andover MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 49/40
G01N 27/26
H01L 21/31
H01L 21/469
US Classification:
250423R, 250424, 250425, 250397, 2504923, 31511121, 118620, 438513, 356316
Abstract:
A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant ions in a plasma chamber proximate to a platen supporting a substrate. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A spectrum of ions present in the plasma is measured as a function of ion mass with a time-of-flight ion detector. The total number ions impacting the substrate is measured with a Faraday dosimetry system. An implant profile is determined from the measured spectrum of ions. An integrated dose is determined from the measured total number of ions and the calculated implant profile. At least one plasma doping parameter is modified in response to the calculated integrated dose.

Profile Adjustment In Plasma Ion Implanter

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US Patent:
7687787, Mar 30, 2010
Filed:
Nov 7, 2008
Appl. No.:
12/267193
Inventors:
Ludovic Godet - North Reading MA, US
George D. Papasouliotis - North Andover MA, US
Ziwei Fang - Beverly MA, US
Richard Appel - Danvers MA, US
Vincent Deno - Gloucester MA, US
Vikram Singh - North Andover MA, US
Harold M. Persing - Rockport MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 37/317
H01L 21/265
H05H 1/24
US Classification:
25049221, 2504922, 250423 R, 250424, 438510, 31511121, 118723 E, 118723 R
Abstract:
A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.

Ion Source

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US Patent:
7767977, Aug 3, 2010
Filed:
Apr 3, 2009
Appl. No.:
12/417929
Inventors:
Ludovic Godet - North Reading MA, US
Svetlana Radovanov - Marblehead MA, US
Timothy J. Miller - Ipswich MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01J 49/10
H01J 37/08
H01J 23/06
US Classification:
250423R, 250424, 2504923, 31511181, 31511121, 3133631, 438961
Abstract:
An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.

Ion Implantation With Heavy Halogenide Compounds

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US Patent:
7927986, Apr 19, 2011
Filed:
Jul 22, 2008
Appl. No.:
12/177750
Inventors:
Ludovic Godet - North Reading MA, US
George D. Papasouliotis - North Andover MA, US
Edwin Arevalo - Haverhill MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01L 21/26
US Classification:
438513, 438506, 257E21247, 257E21316, 216 75, 216 76
Abstract:
A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy halogenide compound gas and generates desired dopant ions and heavy fragments of precursor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precursor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.

Particle Beam Assisted Modification Of Thin Film Materials

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US Patent:
8003498, Aug 23, 2011
Filed:
Nov 12, 2008
Appl. No.:
12/269344
Inventors:
Jonathan G. England - Horsham, GB
Frank Sinclair - Quincy MA, US
John (Bon-Woong) Koo - Andover MA, US
Rajesh Dorai - Woburn MA, US
Ludovic Godet - North Reading MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01L 21/20
H01L 21/36
US Classification:
438486, 257E21331
Abstract:
Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: introducing a plurality of first particles to a first region of the substrate so as to form at least one crystal having a grain boundary in the first region without forming another crystal in a second region, the second region adjacent to the first region; and extending the grain boundary of the at least one crystal formed in the first region to the second region after stopping the introducing the plurality of first particles.

Plasma Processing Apparatus

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US Patent:
8101510, Jan 24, 2012
Filed:
Dec 22, 2009
Appl. No.:
12/644103
Inventors:
Ludovic Godet - North Reading MA, US
Timothy Miller - Ipswich MA, US
Svetlana Radovanov - Marblehead MA, US
Anthony Renau - West Newbury MA, US
Vikram Singh - North Andover MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01L 21/26
H01L 21/3065
C23F 1/00
C23C 16/00
US Classification:
438513, 438511, 438710, 15634551, 118723 R, 257E21328
Abstract:
A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Usj Techniques With Helium-Treated Substrates

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US Patent:
8124506, Feb 28, 2012
Filed:
Jul 31, 2009
Appl. No.:
12/533550
Inventors:
Christopher R. Hatem - Salisbury MA, US
Ludovic Godet - North Reading MA, US
Assignee:
Varian Semiconductor Equipment Associates, Inc. - Gloucester MA
International Classification:
H01L 21/04
US Classification:
438511, 438510
Abstract:
A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.
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Ludovic A Godet from Menlo Park, CA, age ~45 Get Report