Long Dang Nguyen

6344432, Feb 5, 2002

Dec 8, 2000

09/732370

William A. Wojtczak - Santa Clara CA
Ma. Fatima Seijo - Hayward CA
David Bernhard - Dallas TX
Long Nguyen - San Jose CA

Advanced Technology Materials, Inc. - Danbury CT

C11D 904

510175, 510177, 510178, 134 11, 134 12, 134 13, 134 2

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

6383410, May 7, 2002

Aug 8, 2001

09/925874

William A. Wojtczak - San Jose CA
Long Nguyen - Milpitas CA
Stephen A. Fine - Peabody MA

Advanced Technology Materials, Inc. - Danbury CT

C09K 1300

252 791, 252 793, 252 794, 438745, 438756

The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0. 1-10%; preferably 0. 2-2. 8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1. 65-7%; preferably 2. 25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.

6409781, Jun 25, 2002

May 1, 2000

09/562298

William A. Wojtczak - Santa Clara CA
Thomas H. Baum - New Fairfield CT
Long Nguyen - San Jose CA
Cary Regulski - San Jose CA

Advanced Technology Materials, Inc. - Danbury CT

C09K 314

51308, 51307, 51309, 106 3, 438692, 438693, 252 791

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

6492310, Dec 10, 2002

Mar 7, 2001

09/801543

William A. Wojtczak - San Jose CA
George Guan - San Jose CA
Long Nguyen - Milpitas CA

Advanced Technology Materials, Inc. - Danbury CT

C11D 162

510175, 510176, 510177, 134 13, 438118, 438637

The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).

6566315, May 20, 2003

Dec 5, 2001

10/007490

William A. Wojtczak - Austin TX
Ma. Fatima Seijo - Hayward CT
Dave Bernhard - Newtown CT
Long Nguyen - San Jose CA

Advanced Technology Materials, Inc. - Danbury CT

B08B 600

510175, 510176, 510177, 510178, 510506, 134 2, 134 3

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

6527819, Mar 4, 2003

Dec 18, 2001

10/022308

William A. Wojtczak - Austin TX
Thomas H. Baum - New Fairfield CT
Long Nguyen - San Jose CA
Cary Regulski - Sugarhill GA

Advanced Technology Materials, Inc. - Danbury CT

C09G 102

51308, 51307, 51309, 106 3, 438692, 438693, 252 791, 252 792, 252 795, 216 89, 216 99, 216101, 216105, 216106

A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

6599870, Jul 29, 2003

Jun 25, 2002

10/179867

William A. Wojtczak - San Jose CA
George Guan - San Jose CA
Long Nguyen - Milpitas CA

Advanced Technology Materials, Inc. - Danbury CT

C11D 710

510175, 510176, 510178

The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight):.

6660700, Dec 9, 2003

Nov 15, 2001

10/003373

William A. Wojtczak - Santa Clara CA
Ma. Fatima Seijo - Hayward CA
David Bernhard - Dallas TX
Long Nguyen - San Jose CA

Advanced Technologies Materials, Inc. - Danbury CT

C11D 904

510175, 510177, 510178, 134 11, 134 12, 134 13, 134 2

A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0. 1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0. 5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.