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Liliya I Krivulina

from Santa Clara, CA
Age ~44
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Also known as:
Lliliya I Krivulina, Krivulina Liliya, Liliya N
Phone and address:
2937 Kearney Ave, Santa Clara, CA 95051
Related to:
Sivapurapu A LiliyaYelizaveta Krivulina, 87
Connected to:
Ellen Krivulin, 58Rosanna Krivulin, 42Boris Krivy, 89Julia Kriwitz, 48Jill K Krix, 46Michelle M Krix, 50Kyle Kriynovich, 30Ann E Kriz, 78Caroline F Kriz, 66Clair A Kriz, 85

Liliya Krivulina Phones & Addresses

  • 2937 Kearney Ave, Santa Clara, CA 95051
  • Sunnyvale, CA
  • Los Angeles, CA
  • 1550 Vista Club Cir APT 210, Santa Clara, CA 95054

Publications

Us Patents

Dual-Bulb Lamphead Control Methodology

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US Patent:
8309421, Nov 13, 2012
Filed:
Jan 21, 2011
Appl. No.:
13/011687
Inventors:
Yao-Hung Yang - Santa Clara CA, US
Abhijit Kangude - Santa Clara CA, US
Sanjeev Baluja - Campbell CA, US
Michael Martinelli - Santa Clara CA, US
Liliya Krivulina - Sunnyvale CA, US
Thomas Nowak - Cupertino CA, US
Juan Carlos Rocha-Alvarez - San Carlos CA, US
Scott Hendrickson - Brentwood CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/336
H01L 21/76
US Classification:
438308, 438378, 438795, 257E21475, 257E21471, 257E21347, 392407, 392416, 2504921, 2504922, 362243, 362341
Abstract:
The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.

Dual-Bulb Lamphead Control Methodology

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US Patent:
20130122611, May 16, 2013
Filed:
Nov 5, 2012
Appl. No.:
13/669113
Inventors:
YAO-HUNG YANG - Santa Clara CA, US
Abhijit Kangude - Santa Clara CA, US
Sanjeev Baluja - Campbell CA, US
Michael Martinelli - Santa Clara CA, US
Liliya Krivulina - Sunnyvale CA, US
Thomas Nowak - Cupertino CA, US
Juan Carlos Rocha-Alvarez - San Carlos CA, US
Scott A. Hendrickson - Brentwood CA, US
International Classification:
H05B 37/02
H01L 21/26
H01L 21/66
US Classification:
438 7, 315151, 257E21529, 257E21328
Abstract:
The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.

Microwave Excursion Detection For Semiconductor Processing

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US Patent:
20140000515, Jan 2, 2014
Filed:
Jun 27, 2012
Appl. No.:
13/534575
Inventors:
SCOTT A. HENDRICKSON - Brentwood CA, US
Liliya Krivulina - Sunnyvale CA, US
Juan Carlos Rocha - San Carlos CA, US
Sanjeev Baluja - Campbell CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/52
G01T 1/00
US Classification:
118712, 250395, 2503361
Abstract:
Devices and methods are provided for monitoring low-level microwave excursions from a UV curing system to determine if equipment is damaged, such as screen tears or improper assembly of UV lampheads. A radio frequency (RF) detector may be used to detect microwaves in a range of about 0.2-5 mW/cm, wherein the RF detector comprises an antenna with a hoop shaped portion, a circuit board having a diode detector and an amplifier circuit, a housing, and a bracket coupled to the housing that is suitable for coupling the RF detector to the UV curing system. An alarm threshold may also be set, which can be correlated to microwave levels at or below levels that could cause damage to semiconductor devices being processed. A substrate processing system comprising an RF detector is also provided.

Loadlock Integrated Bevel Etcher System

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US Patent:
20200234982, Jul 23, 2020
Filed:
Apr 2, 2020
Appl. No.:
16/838128
Inventors:
- Santa Clara CA, US
Jeongmin LEE - San Ramon CA, US
Paul CONNORS - San Mateo CA, US
Dale R. DU BOIS - Los Gatos CA, US
Prashant Kumar KULSHRESHTHA - San Jose CA, US
Karthik Thimmavajjula NARASIMHA - San Francisco CA, US
Brett BERENS - San Jose CA, US
Kalyanjit GHOSH - Pleasanton CA, US
Jianhua ZHOU - Campbell CA, US
Ganesh BALASUBRAMANIAN - Fremont CA, US
Kwangduk Douglas LEE - Redwood City CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Hiroyuki OGISO - Sunnyvale CA, US
Liliya KRIVULINA - Santa Clara CA, US
Rick GILBERT - San Jose CA, US
Mohsin WAQAR - Alameda CA, US
Venkatanarayana SHANKARAMURTHY - San Jose CA, US
Hari K. PONNEKANTI - San Jose CA, US
International Classification:
H01L 21/67
H01J 37/32
H01L 21/687
Abstract:
Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Loadlock Integrated Bevel Etcher System

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US Patent:
20190371630, Dec 5, 2019
Filed:
Aug 14, 2019
Appl. No.:
16/540304
Inventors:
- Santa Clara CA, US
Jeongmin Lee - San Ramon CA, US
Paul Connors - San Mateo CA, US
Dale R. Du Bois - Los Gatos CA, US
Prashant Kumar Kulshreshtha - San Jose CA, US
Karthik Thimmavajjula Narasimha - San Francisco CA, US
Brett Berens - San Jose CA, US
Kalyanjit Ghosh - Pleasanton CA, US
Jianhua Zhou - Campbell CA, US
Ganesh Balasubramanian - Fremont CA, US
Kwangduk Douglas Lee - Redwood City CA, US
Juan Carlos Rocha-Alvarez - San Carlos CA, US
Hiroyuki Ogiso - Sunnyvale CA, US
Liliya Krivulina - Santa Clara CA, US
Rick Gilbert - San Jose CA, US
Mohsin Waqar - Alameda CA, US
Venkatanarayana Shankaramurthy - San Jose CA, US
Hari K. Ponnekanti - San Jose CA, US
International Classification:
H01L 21/67
H01J 37/32
H01L 21/687
Abstract:
Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Loadlock Integrated Bevel Etcher System

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US Patent:
20170092511, Mar 30, 2017
Filed:
Feb 2, 2016
Appl. No.:
15/013547
Inventors:
- Santa Clara CA, US
Jeongmin LEE - Sunnyvale CA, US
Paul CONNORS - San Mateo CA, US
Dale R. DU BOIS - Los Gatos CA, US
Prashant Kumar KULSHRESHTHA - San Jose CA, US
Karthik Thimmavajjula NARASIMHA - San Francisco CA, US
Brett BERENS - San Jose CA, US
Kalyanjit GHOSH - San Jose CA, US
Jianhua ZHOU - Campbell CA, US
Ganesh BALASUBRAMANIAN - Sunnyvale CA, US
Kwangduk Douglas LEE - Redwood City CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Hiroyuki OGISO - Sunnyvale CA, US
Liliya KRIVULINA - Santa Clara CA, US
Rick GILBERT - San Jose CA, US
Mohsin WAQAR - Alameda CA, US
Venkatanarayana SHANKARAMURTHY - San Jose CA, US
Hari K. PONNEKANTI - San Jose CA, US
International Classification:
H01L 21/67
H01J 37/32
H01L 21/687
Abstract:
Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.
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Liliya I Krivulina from Santa Clara, CA, age ~44 Get Report