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Komal S Garde

from Santa Clara, CA
Age ~34
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Also known as:
Komal C Garde
Connected to:
Anne H Garde, 77Donna K Garde, 67Gabriel J Garde, 43George M Garde, 68Jamie Garde, 71Michelle C Garde, 41Mihir Garde, 37Timothy Garde, 73Venus T Garde, 89Alexandra J Gardea, 31

Komal Garde Phones & Addresses

  • Santa Clara, CA
  • Fremont, CA
  • Greensboro, NC

Resumes

Resumes

Komal Garde Photo 1

Process Engineer

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Location:
3639 Macgregor Ln, Santa Clara, CA 95054
Industry:
Semiconductors
Work:
Applied Materials
Process Engineer
Joint School of Nanoscience and Nanoengineering
Research Assistant
Education:
North Carolina Agricultural and Technical State University 2013 - 2017
Doctorates, Doctor of Philosophy, Philosophy Joint School of Nanoscience and Nanoengineering 2011 - 2013
Masters North Carolina Agricultural and Technical State University 2011 - 2013
Masters Kendriya Vidyalaya
Skills:
Scanning Electron Microscopy
Characterization
Nanotechnology
Biotechnology
Dls
Biomaterials
Spectroscopy
Research
Cytotoxicity
Toxicity
Mammalian Cell Culture
Data Analysis
Protein Purification
Science
Microsoft Office
Biochemistry
Pcr
Physical Vapor Deposition
Microsoft Excel
Powerpoint
Cell Culture
Helium Ion Microscopy
Mask Aligner
Reactive Ion Etching
Microsoft Powerpoint
Microsoft Word
Microfabrication
Focused Ion Beam
Languages:
English
Hindi
Marathi
Certifications:
Six Sigma
Komal Garde Photo 2

Komal Garde

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Publications

Us Patents

Methods And Apparatus For Processing A Substrate

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US Patent:
20230017383, Jan 19, 2023
Filed:
Jul 14, 2021
Appl. No.:
17/375654
Inventors:
- Santa Clara CA, US
Joung Joo LEE - San Jose CA, US
Komal GARDE - Santa Clara CA, US
Kishor Kumar KALATHIPARAMBIL - Santa Clara CA, US
Xianmin TANG - San Jose CA, US
Xiangjin XIE - Fremont CA, US
Rui LI - San Jose CA, US
International Classification:
H01L 21/768
H01L 21/285
C23C 14/34
Abstract:
Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.

Overhang Reduction Using Pulsed Bias

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US Patent:
20210391176, Dec 16, 2021
Filed:
Jun 16, 2020
Appl. No.:
16/902918
Inventors:
- Santa Clara CA, US
Komal S. Garde - Santa Clara CA, US
Kishor Kalathiparambil - San Jose CA, US
Joung Joo Lee - San Jose CA, US
Xianmin Tang - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/285
H01L 21/3213
H01J 37/34
C23C 14/35
C23C 14/18
Abstract:
Embodiments of the disclosure relate to methods for enlarging the opening width of substrate features by reducing the overhang of deposited films. Some embodiments of the disclosure utilize a highly energetic bias pulse to etch the deposited film near the opening of the substrate feature. Some embodiments of the disclosure etch the deposited film without damaging the underlying substrate.

Application Of Electrical Stimulation Via Nanoelectrodes To Modulate Stem Cells

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US Patent:
20190359967, Nov 28, 2019
Filed:
May 28, 2019
Appl. No.:
16/423913
Inventors:
- Greensboro NC, US
Komal Garde - Santa Clara CA, US
International Classification:
C12N 13/00
C12N 5/0793
Abstract:
The presently disclosed subject matter relates generally to the delivery of electrical stimuli via cell-penetrating nanoelectrodes. Such electrical stimuli leads to differentiation of cells, including but not limited to adipose derived stem cells, to neural lineage, specifically to neural cells.
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Komal S Garde from Santa Clara, CA, age ~34 Get Report