Resumes
Resumes
Kevin Siefering Phones & Addresses
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6528 Aster Cir, Excelsior, MN 55331 (952) 401-8763
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Chaska, MN
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Cary, NC
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Victoria, MN
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Durham, NC
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6528 Aster Cir, Excelsior, MN 55331
Publications
Us Patents
Edge Gripping Device For Handling A Set Of Semiconductor Wafers In An Immersion Processing System
View pageUS Patent:
6845779, Jan 25, 2005
Filed:
Nov 11, 2002
Appl. No.:
10/292807
Inventors:
Tim W. Herbst - Minneapolis MN, US
Todd K. Maciej - Little Falls MN, US
Tracy A. Gast - Waconia MN, US
Thomas J. Wagener - Shorewood MN, US
Kevin L. Siefering - Excelsior MN, US
Todd K. Maciej - Little Falls MN, US
Tracy A. Gast - Waconia MN, US
Thomas J. Wagener - Shorewood MN, US
Kevin L. Siefering - Excelsior MN, US
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
B08B 920
B65D 8530
B65D 8530
US Classification:
134 254, 134133, 134165, 134902, 118503, 206711
Abstract:
A microelectronic substrate handling device comprising first and second support structures spaced from each other, the first support structure having a series of upper teeth defining a series of upper notches extending along a length of the first support structure and a series of lower teeth defining a series of lower notches extending along a length of the first support structure, each of the upper and lower notches opening toward the second support structure, wherein the upper and lower notches are offset from each other by a predetermined offset distance so that an edge of a microelectronic device will fit differently within the upper and lower notches of the first support structure when supported between the first and second support structures.
Apparatus For Surface Conditioning
View pageUS Patent:
7025831, Apr 11, 2006
Filed:
Nov 19, 1999
Appl. No.:
09/443663
Inventors:
Jeffery W. Butterbaugh - Eden Prairie MN, US
David C. Gray - Sunnyvale CA, US
Robert T. Fayfield - St. Louis Park MN, US
Kevin Siefering - Chaska MN, US
John Heitzinger - St. Louis Park MN, US
Fred C. Hiatt - Lakeville MN, US
David C. Gray - Sunnyvale CA, US
Robert T. Fayfield - St. Louis Park MN, US
Kevin Siefering - Chaska MN, US
John Heitzinger - St. Louis Park MN, US
Fred C. Hiatt - Lakeville MN, US
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
C23C 16/48
C23F 1/00
H01L 21/306
C23F 1/00
H01L 21/306
US Classification:
118724, 118715, 1563455
Abstract:
Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of this substrate so that the gas, after it has chemically reacted with the substrate surface, flows outward from where it has reacted, off the substrate toward the periphery of the chamber and out a peripheral or central underside exhaust outlet. Gas feed may be provided to one or both sides the substrate and light activation of the substrate or conditioning gas may be provided on one or both sides.
Advanced Process Control For Low Variation Treatment In Immersion Processing
View pageUS Patent:
7312161, Dec 25, 2007
Filed:
May 5, 2006
Appl. No.:
11/429572
Inventors:
Kevin L. Siefering - Excelsior MN, US
Steven L. Nelson - Minnetonka MN, US
Steven L. Nelson - Minnetonka MN, US
Assignee:
FSI International, Inc. - Chaska MN
International Classification:
H01I 21/302
US Classification:
438756, 438 8, 436 55
Abstract:
The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period of time in the treatment process in which the treatment process is being terminated. In a preferred embodiment, conditions that indicate the progress of the treatment on a real time basis are monitored, and the timing of the initiation of the termination process is additionally based on the calculated amount of treatment and treatment rate of the process in progress.
Method For Material Removal From An In-Process Microelectronic Substrate
View pageUS Patent:
20020160606, Oct 31, 2002
Filed:
Feb 14, 2002
Appl. No.:
10/076115
Inventors:
Kevin Siefering - Excelsior MN, US
Paul Deaton - San Jose CA, US
Paul Deaton - San Jose CA, US
International Classification:
H01L021/302
H01L021/461
H01L021/461
US Classification:
438/689000
Abstract:
A method for removing a material from a surface of an in-process, microelectronic substrate is provided. The method comprises providing a material-removing composition in the form of a liquid and flash vaporizing the liquid, thereby forming a material-removing vapor. The resulting vapor is then contacted with the material on the substrate. Preferred substrates include those used to make microelectronic articles such as semiconductor wafers and those used to make electric circuits, displays such as computer displays, optical storage media such as CD-ROM or DVD discs and other materials and products.
Advanced Process Control For Immersion Processing
View pageUS Patent:
20030094196, May 22, 2003
Filed:
Nov 8, 2002
Appl. No.:
10/290768
Inventors:
Kevin Siefering - Excelsior MN, US
Phillip Grothe - Eden Prairie MN, US
David Becker - Excelsior MN, US
Phillip Grothe - Eden Prairie MN, US
David Becker - Excelsior MN, US
International Classification:
G05D011/00
US Classification:
137/093000
Abstract:
The present invention provides immersion chemical processing systems capable of providing a desired blend of at least two chemicals to an immersion bath as well as methods of treating substrates immersively. The system is capable of producing a blend with one or more desired properties extremely accurately due at least in part to the capability of the system to monitor at least one property of the blend or at least one parameter of the immersion process and to utilize the information gathered to provide dynamic closed-loop feedback control of one or more process parameters known to relate to the same.
Fabrication Of Discrete Thin Film Wiring Structures
View pageUS Patent:
52242650, Jul 6, 1993
Filed:
Oct 29, 1991
Appl. No.:
7/783959
Inventors:
John B. Dux - Millbrook NY
Janet L. Poetzinger - Pleasant Valley NY
Roseanne M. Prestipino - Beacon NY
Kevin L. Siefering - Cary NC
Janet L. Poetzinger - Pleasant Valley NY
Roseanne M. Prestipino - Beacon NY
Kevin L. Siefering - Cary NC
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01K 310
US Classification:
29852
Abstract:
Multilayer thin film structures are fabricated in a parallel manner by creating testable sub-units and then joining them together to form a finished three-dimensional wiring matrix. Thus, there is disclosed a process for the fabrication of a thin film wiring structure including the steps of: forming a core wiring structure which includes the steps of: a. providing a low expansion, metallic, patterned core material; b. encapsulating the core material in a dielectric material; c. forming vias in the dielectric material; and d. metallizing the dielectric material in the vias and on the surface of the dielectric material; forming at least one cover laminate which includes dielectric material and a low expansion, metallic carrier; laminating the at least one cover laminate to the core wiring structure wherein the dielectric material of the cover laminate is in contact with the core wiring structure; forming vias through the cover laminate, the vias communicating with the vias in the core wiring structure; and filling the vias in the cover laminate and the core wiring structure with a conductive material, thereby forming a thin film wiring sub-unit. Thereafter, a plurality of such sub-units are fabricated simultaneously, tested and then stacked and aligned on a stiffener, such as multilayer ceramic substrate, before being laminated to form a three-dimensional wiring matrix.
Cryogenic Station
View pageUS Patent:
53737016, Dec 20, 1994
Filed:
Jul 7, 1993
Appl. No.:
8/088454
Inventors:
Kevin L. Siefering - Cary NC
Walter H. Whitlock - Chapel Hill NC
Walter H. Whitlock - Chapel Hill NC
Assignee:
The BOC Group, Inc. - New Providence NJ
International Classification:
F17C 902
US Classification:
62 481
Abstract:
A cryogenic station for delivering a cryogen substantially free of higher boiling impurities. The cryogenic station includes an insulated main tank and an auxiliary tank. Liquid stored in the main tank and pressurized by a pressure building circuit is driven into the auxiliary tank. Cryogenic vapor formed in the auxiliary tank is warmed to ambient temperature by an external heat exchanger and is then recirculated back to an internal heat exchanger located within the auxiliary tank. The internal heat exchanger is configured such that a portion of the cryogen driven into the auxiliary tank is vaporized to form the cryogenic vapor and a remaining portion of such cryogen is left within the auxiliary tank to substantially retain the higher boiling impurities in a solidified state. As such, the cryogenic vapor is substantially free from the impurities when delivered as a product stream.
Atmospheric Pressure Ionization Mass Spectroscopy Method Including A Silica Gel Drying Step
View pageUS Patent:
53047966, Apr 19, 1994
Filed:
Mar 25, 1992
Appl. No.:
7/858388
Inventors:
Kevin L. Siefering - Cary NC
Walter H. Whitlock - Chapel Hill NC
Walter H. Whitlock - Chapel Hill NC
Assignee:
The BOC Group, Inc. - Murray Hill NJ
International Classification:
B01D 5944
US Classification:
250282
Abstract:
The present invention provides a method of analyzing a gas sample for trace impurity concentration by atmospheric pressure ionization mass spectroscopy. In accordance with the present invention, moisture is removed from the gas sample before analysis by passing the gas sample through a dried bed of silica gel. The bed of silica gel is sufficiently dried so that remaining moisture present in the gas sample after passage through the bed is at a sufficiently low concentration such that the trace impurity concentration as analyzed by atmospheric ionization mass spectroscopy will not be effected by the remaining moisture.