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Keenan L Evans

from Tempe, AZ
Age ~74
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Also known as:
Keenan Karla Evans, Keenan K Evans, Keenan E Evans, Keenan J Evans, Keenan Evans Trst, Keenan Eva, Karla Evans Keenan, Lane Evans Keenan, Trst Evans Keenan
Phone and address:
1323 Louis Way, Tempe, AZ 85284
(480) 730-8990
Related to:
Richard C Romo, 46Kristen Krull, 33Stephen Evans, 68
Connected to:
Addie M Evans, 44Adele M Evans, 72Al J Evans, 52Alberta Evans, 68Aleatha A Evans, 52Aleator O Evans, 44Alena Evans, 42Alex Evans, 47Alexzena Y Evans, 55Alf N Evans, 86

Keenan Evans Phones & Addresses

  • 1323 Louis Way, Tempe, AZ 85284 (480) 730-8990 (480) 839-0609
  • Mesa, AZ
  • Bisbee, AZ
  • 1225 Straford Ct, Chandler, AZ 85224 (480) 491-5159
  • Scottsdale, AZ
  • Phoenix, AZ
  • Cochise, AZ
  • Maricopa, AZ

Work

Company: On semiconductor corporation Address: 5005 E Mcdowell Rd, Phoenix, AZ 85008 Phones: (602) 244-6600 Position: Vice president quality Industries: Semiconductors and Related Devices

Resumes

Resumes

Keenan Evans Photo 1

Keenan Evans

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
Keenan Evans
Vice President Quality
ON Semiconductor Corporation
Semiconductors and Related Devices
5005 E Mcdowell Rd, Phoenix, AZ 85008
Keenan Evans
Manager
EVANS & EVANS CLOTHING AND ACCESSORIES, LLC
Ret Women's Clothing
11457 E Quintana Ave, Mesa, AZ 85212
1323 E Louis Way, Tempe, AZ 85284
Keenan Evans
Vice Presi
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Wholesale Semiconductor Components · Semiconductors and Related Devices
5005 E Mcdowell Rd, Phoenix, AZ 85008
5005 E Mcdowell Rd Ms C250, Phoenix, AZ 85008
(602) 244-6600, (602) 244-6071, (602) 244-3000
Keenan Evans
Vice President Quality
ON Semiconductor
Semiconductors · Mfg Semiconductors/Devices Electric Measuring Instrument & Home Audio/Video Equipment · Mfg Semiconductors/Dvcs Engineering Services Elec Measuring Instr & Home Audio/Video Eqp · Mfg Semiconductors/Dvcselec Measuring Instr & Home Audio/Video Eqp · Nonclassifiable Establishments · Semiconductors and Related Devices · Semiconductor Devices (Manufac
5005 E Mcdowell Rd, Phoenix, AZ 85008
5005 E Mcdowell Rd Ms C 250, Phoenix, AZ 85008
1209 Orange St, Wilmington, DE 19801
(602) 244-6600, (602) 244-6071, (602) 244-7160, (602) 244-7005
Keenan Evans
Vice President Quality
ON Semiconductor Corporation
Semiconductors and Related Devices
5005 E Mcdowell Rd, Phoenix, AZ 85008

Publications

Us Patents

Gas Vapor Sensor

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US Patent:
53867157, Feb 7, 1995
Filed:
Dec 6, 1993
Appl. No.:
8/161624
Inventors:
Keenan L. Evans - Tempe AZ
Young S. Chung - Tempe AZ
William Glaunsinger - Chandler AZ
Ian W. Sorensen - Phoenix AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2960
G01N 2700
US Classification:
73 3105
Abstract:
An embodiment of a sensing element (10) for a gas vapor detector (24) is formed from a gold-palladium alloy. The sensing element (10) is highly sensitive to phosphine or arsine gas. The by volume palladium concentration of the sensing element is typically less than 20%. The sensing element (10) is used as an active element in a gas vapor detector (24).

Method For Forming A Semiconductor Sensor Fet Device

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US Patent:
56935455, Dec 2, 1997
Filed:
Feb 28, 1996
Appl. No.:
8/608160
Inventors:
Young Sir Chung - Gilbert AZ
Keenan L. Evans - Tempe AZ
Henry G. Hughes - Scottsdale AZ
Ronald J. Gutteridge - Paradise Valley AZ
Assignee:
Motorola, Inc. - Schaumberg IL
International Classification:
H01L 2177
US Classification:
437 40R
Abstract:
A method for forming a semiconductor sensor FET device (2) comprises the steps of forming spaced-apart doped source (6) and drain (8) regions in a semiconductor substrate (4) with electrically conductive paths (16, 18) to each region. The region between the source (6) and drain (8) regions defines a gate region (12). An insulating layer (14, 15) is formed on the substrate (4) and source and drain regions (8), and a cantilever gate structure is formed using a sacrificial layer (60), such that a gate electrode (26) is supported on a cantilever support (28) and a cavity (22) separates the gate electrode (26) from the gate region (12). A conductive layer (34) is formed overlying the gate electrode (26) to provide a heater for the gate electrode (26). The chemical species collect in the cavity (22) and react with the surface (27) of the gate electrode (26).

Method For Enhancing Aluminum Nitride

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US Patent:
55207855, May 28, 1996
Filed:
Jul 25, 1994
Appl. No.:
8/280238
Inventors:
Keenan L. Evans - Tempe AZ
Hang M. Liaw - Scottsdale AZ
Jong-Kai Lin - Chandler AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
C23C 1434
H01L 21324
US Classification:
20419227
Abstract:
A method for enhancing aluminum nitride includes, in one version, annealing sputtered aluminum nitride in a reducing atmosphere (11), and subsequently annealing the sputtered aluminum nitride in an inert atmosphere (12). A superior aluminum nitride thin film (13) results. The films can withstand exposure to boiling water for times up to twenty minutes and maintain a refractive index, N. sub. f, greater than 2. 0, and a preferred crystalline orientation ratio, I(002)/I(102), in excess of 1000.

Method Of Sensing A Chemical And Sensor Therefor

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US Patent:
56835698, Nov 4, 1997
Filed:
Feb 28, 1996
Appl. No.:
8/608357
Inventors:
Young Sir Chung - Gilbert AZ
Keenan L. Evans - Tempe AZ
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G01N 2726
US Classification:
205775
Abstract:
A sensor (10) includes a gate electrode (20) overlying a channel region (34). A gap (22) between the gate electrode (20) and the channel region (34) allows a surface (28) of the gate electrode (20) to be exposed to a chemical. Upon exposure to the chemical, a surface potential or an electrical impedance of the gate electrode (20) may change. Comparing the changes in surface potential versus the changes in electrical impedance provides a method to distinguish between similar chemical species and also to extend the detection range of the sensor (10).

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Keenan L Evans from Tempe, AZ, age ~74 Get Report