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Jun Hang Zhao

from Chicago, IL
Age ~69
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Also known as:
Jun H Zhao, Jun Hang Zhai, Jun H Zhai, Jun O
Phone and address:
2921 S Union Ave, Chicago, IL 60616
(312) 842-4582
Related to:
Allison Zhao, 32Fu L Zhao, 87Nianda Zhao, 61Chao Zhao Hong, 58
Connected to:
Addison Zhao, 33Adrienne H Zhao, 32Ailing Zhao, 51Aimee Zhao, 31Allison S Zhao, 28Ann F Zhao, 36Baisong Zhao, 60Bei Zhao, 59Cen Zhao, 36Chan Zhao, 42

Jun Zhao Phones & Addresses

  • 2921 S Union Ave, Chicago, IL 60616 (312) 842-4582
  • 3017 Emerald St, Chicago, IL 60616 (312) 842-4582
  • 3231 Emerald St, Chicago, IL 60616 (312) 567-1066
  • Saratoga, CA

Professional Records

Medicine Doctors

Jun Zhao Photo 1

Jun Zhao

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Specialties:
Neurology
Work:
Riverside Medical GroupRiverside Neurology Specialists
12200 Warwick Blvd STE 110, Newport News, VA 23601
(757) 534-5100 (phone), (757) 534-5395 (fax)

Riverside Medical GroupRiverside Hampton Roads Neurology
850 Enterprise Pkwy STE 1400, Hampton, VA 23666
(757) 637-7500 (phone), (757) 637-7541 (fax)
Procedures:
Neurological Testing
Sleep and EEG Testing
Lumbar Puncture
Conditions:
Alzheimer's Disease
Carpel Tunnel Syndrome
Dementia
Epilepsy
Hemorrhagic stroke
Languages:
English
Description:
Dr. Zhao works in Hampton, VA and 1 other location and specializes in Neurology. Dr. Zhao is affiliated with Riverside Regional Medical Center.

Lawyers & Attorneys

Jun Zhao Photo 2

Jun Zhao - Lawyer

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ISLN:
923711244
Admitted:
2006

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jun Zhao
President
SUNFLUX INC
Business Services at Non-Commercial Site · Nonclassifiable Establishments
20160 Mendelsohn Ln, Saratoga, CA 95070
650 Page Ml Rd, Palo Alto, CA 94304
11764 Rdg Crk Ct, Cupertino, CA 95014
Jun Zhao
Managing
T'z Designs LLC
Industrial Design & Consulting
5900 Optical Ct, San Jose, CA 95138
812 Birch Ave, Sunnyvale, CA 94086
Jun Zhao
President
LITTLE POTATO, INC
302 De Leon Ave, Fremont, CA 94539

Publications

Us Patents

Chemical Vapor Deposition Of Ruthenium Films For Metal Electrode Applications

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US Patent:
6440495, Aug 27, 2002
Filed:
Aug 3, 2000
Appl. No.:
09/632497
Inventors:
Christopher P. Wade - Los Gatos CA
Elaine Pao - Los Altos Hills CA
Yaxin Wang - Fremont CA
Jun Zhao - Cupertino CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1606
US Classification:
427250, 42725531, 427255394, 4272557, 427124
Abstract:
The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300Â C. to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500Â C.

Apparatus For Vaporization Sequence For Multiple Liquid Precursors Used In Semiconductor Thin Film Applications

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US Patent:
6464782, Oct 15, 2002
Filed:
May 23, 1996
Appl. No.:
08/652194
Inventors:
Visweswaren Sivaramakrishnam - Cupertino CA
Hiroshi Nishizato - Kumamoto, JP
Jun Zhao - Milpitas CA
Ichiro Yokoyama - Sakura, JP
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C30B 2516
US Classification:
117202, 118715, 118719, 118726
Abstract:
A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source. A temperature gradient may then be maintained along the manifold with the temperature gradually increased in a direction toward the processing chamber while still mitigating premature boiling of the liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources or components.

Cvd Ruthenium Seed For Cvd Ruthenium Deposition

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US Patent:
6479100, Nov 12, 2002
Filed:
Apr 5, 2001
Appl. No.:
09/827878
Inventors:
Xiaoliang Jin - San Jose CA
Christopher P. Wade - Los Gatos CA
Xianzhi Tao - Palo Alto CA
Elaine Pao - Los Altos Hills CA
Yaxin Wang - Fremont CA
Jun Zhao - Cupertino CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1640
US Classification:
42725531, 4272557, 427 99, 4271265, 4273762
Abstract:
The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

Generating And Using A Color Palette

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US Patent:
6518981, Feb 11, 2003
Filed:
Nov 12, 1997
Appl. No.:
08/969058
Inventors:
Jun Zhao - San Jose CA
Timothy L. Kohler - Mountain View CA
Jonathan Hui - Fremont CA
Assignee:
Canon Kabushiki Kaisha - Tokyo
International Classification:
G09G 500
US Classification:
345764, 345589, 345593, 345601, 382168
Abstract:
To generate a color palette having m colors (such as 2 =256 colors) from a color image described in a color space, pixel image data corresponding to the color image is first obtained. A frequency of occurrence for each color in the pixel image data is then determined. Each color in the pixel image data is assigned to one of a predetermined number of cells into which the color space has been partitioned, the predetermined number being not greater than m. The most commonly occurring color is selected in each cell in which a color exists, so as to obtain n palette colors. A vote value is calculated for each unselected color, the vote value being based at least in part on the frequency of occurrence of the color in the pixel image and a weighting factor based on a rank of the color in its corresponding cell, the unselected colors being the colors not selected in the first selecting step. Thereafter, m-n colors are selected as the unselected colors with the highest vote values. Also, input colors in a color image described in a color space are mapped to a reduced palette of m colors derived by partitioning the color space into a predetermined number of cells, there being at least one palette color in each cell that includes an input color.

Temperature Controlled Gas Feedthrough

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US Patent:
6527865, Mar 4, 2003
Filed:
Jun 16, 2000
Appl. No.:
09/595767
Inventors:
Talex Sajoto - San Jose CA
Charles Dornfest - Fremont CA
Leonid Selyutin - San Leandro CA
Jun Zhao - Cupertino CA
Vincent Ku - San Jose CA
Xiao Liang Jin - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16000
US Classification:
118715, 118724
Abstract:
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

Process For Depositing Layers On A Semiconductor Wafer

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US Patent:
6534360, Mar 18, 2003
Filed:
Apr 4, 2001
Appl. No.:
09/826711
Inventors:
Pravin Narwankar - Sunnyvale CA
Jun Zhao - Cupertino CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 218242
US Classification:
438253, 438396, 438250, 438393
Abstract:
Processes which use the same precursor material for forming a metal electrode deposition as for forming a dielectric layer deposition. The layers may be successively formed in the same chamber, or may be formed in like chambers located in a processing system.

High Temperature Ceramic Heater Assembly With Rf Capability

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US Patent:
6616767, Sep 9, 2003
Filed:
Mar 27, 1998
Appl. No.:
09/057005
Inventors:
Jun Zhao - Cupertino CA
Talex Sajoto - San Jose CA
Charles Dornfest - Fremont CA
Harold Mortensen - Carlsbad CA
Richard Palicka - San Clemente CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118723, 15634547
Abstract:
The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.

High Temperature Filter For Cvd Apparatus

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US Patent:
6635114, Oct 21, 2003
Filed:
Dec 17, 1999
Appl. No.:
09/467296
Inventors:
Jun Zhao - Cupertino CA
Charles Dornfest - Fremont CA
Frank Chang - San Jose CA
Xiaoliang Jin - San Jose CA
Po Tang - San Jose CA
Assignee:
Applied Material, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
118715, 118726, 15634529
Abstract:
The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces âflashâ sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e. g.
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Jun Hang Zhao from Chicago, IL, age ~69 Get Report