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Joyce Sian Oey

from Austin, TX
Age ~55
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Related to:
Sang Hoon Lee, 54Olena Gladkykh, 32Anna Raymond Mccraney, 52Kum BokyoungEric Kim, 64
Connected to:
Cheuw M Oey, 59Christopher OeyLinus L Oey, 55Bernadette R Ofa, 41Perry V Ofalla, 48Ann C Ofallon, 78Carole N Ofallon, 79Mary E Ofallon, 81Joan Ofarc, 104Javier H Ofarril, 54

Joyce Oey Phones & Addresses

  • Austin, TX
  • El Paso, TX
  • Round Rock, TX
  • Canyon Lake, TX

Industries

Semiconductors

Resumes

Resumes

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Joyce Oey

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Location:
Austin, TX
Industry:
Semiconductors

Publications

Us Patents

Method Of Modeling And Controlling The Endpoint Of Chemical Mechanical Polishing Operations Performed On A Process Layer, And System For Accomplishing Same

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US Patent:
6534328, Mar 18, 2003
Filed:
Jul 19, 2001
Appl. No.:
09/909162
Inventors:
Joyce S. Oey Hewett - Austin TX
Alexander J. Pasadyn - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
H01L 2100
US Classification:
438 8, 438 5, 438 7, 438 16, 438692
Abstract:
The present invention is generally directed to a method of modeling and controlling the endpoint of chemical mechanical polishing operations performed on a process layer, and a system for accomplishing same. In one illustrative embodiment, the method comprises providing a first wafer having a process layer formed thereabove, determining a duration of an endpoint polishing process performed on the process layer on the wafer, providing a second wafer having a process layer formed thereabove, and modifying at least one parameter of the endpoint polishing process to be performed on the process layer formed above the second wafer based upon a variance between the determined duration of the endpoint polishing process performed on the process layer on the first wafer and a target value for the duration of the endpoint polishing process.

Automated Method Of Controlling Photoresist Develop Time To Control Critical Dimensions, And System For Accomplishing Same

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US Patent:
6569692, May 27, 2003
Filed:
Feb 2, 2001
Appl. No.:
09/776087
Inventors:
Christopher A. Bode - Austin TX
Joyce S. Oey Hewett - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G01R 3126
US Classification:
438 14, 438 16, 438942
Abstract:
The present invention is directed to an automated method of controlling photoresist develop time to control critical dimensions, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension of each of a plurality of features formed in a layer of photoresist, providing the measured critical dimensions of the features, in the layer of photoresist to a controller that determines, based upon the measured critical dimensions, a duration of a photoresist develop process to be performed on a layer of photoresist formed above a subsequently processed wafer, and performing a photoresist develop process on the subsequently processed wafer for the determined duration.

Method Of Varying Stepper Exposure Dose To Compensate For Across-Wafer Variations In Photoresist Thickness

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US Patent:
6576385, Jun 10, 2003
Filed:
Feb 2, 2001
Appl. No.:
09/776206
Inventors:
Christopher A. Bode - Austin TX
Joyce S. Oey Hewett - Austin TX
Alexander J. Pasadyn - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G03F 900
US Classification:
430 30, 430312
Abstract:
A method of compensating for across-wafer variations in photoresist thickness is provided. The method comprises providing a wafer having a process layer formed there-above, forming a layer of photoresist above the process layer, measuring a thickness of the layer of photoresist at a plurality of locations to result in a plurality of thickness measurements, providing the thickness measurements to a controller that determines, based upon the thickness measurements, an exposure dose of an exposure process to be performed on the layer of photoresist, and performing the exposure process on the layer of photoresist using the determined exposure dose. This exposure dose may be varied on a flash-by-flash basis as the stepper tool âstepsâ across the surface of wafers. That is, the exposure dose for a group of flashes, or for each flash, may be varied in response to the thickness measurements.

Use Of Endpoint System To Match Individual Processing Stations Within A Tool

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US Patent:
6588007, Jul 1, 2003
Filed:
Jan 3, 2001
Appl. No.:
09/753705
Inventors:
Alexander J. Pasadyn - Austin TX
Joyce S. Oey Hewett - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G06F 1750
US Classification:
716 19, 716 20, 716 21
Abstract:
A technique for processing a wafer in a semiconductor manufacturing process are disclosed. The method comprises first collecting a set of processing rate data from a multi-station processing tool, the set including process rate data from at least two stations in the processing tool. The collected processing rate data is then communicated to a controller that autonomously compares the processing rate data to determine whether to adjust a process parameter. The method then adjusts the process parameter for at least one station to match the process endpoint for the at least one station.

Method Of Controlling Chemical Mechanical Polishing Operations To Control Erosion Of Insulating Materials

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US Patent:
6595830, Jul 22, 2003
Filed:
Mar 26, 2001
Appl. No.:
09/817532
Inventors:
Joyce S. Oey Hewett - Austin TX
Gerd Franz Christian Marxsen - Radebeul, DE
Anthony J. Toprac - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
B24B 5100
US Classification:
451 5, 451 41, 451 57
Abstract:
The present invention is directed to a method of polishing wafers on a polishing tool comprised of first, second and third platens. The method comprises providing a wafer having a patterned layer of insulating material, a barrier metal layer, and a metal layer formed above the wafer, performing a first polishing operation on the wafer at the first platen to remove a majority of the metal layer above the barrier metal layer, and performing an endpoint polishing operation on the wafer at the second platen to remove at least some of the metal layer. The method further comprises performing a timed overpolish operation on the wafer at the second platen after the endpoint polishing operation is completed at the second platen, performing a timed polishing operation on the wafer at the third platen to remove at least some of the barrier metal layer, determining an erosion rate of the patterned layer of insulating material, providing the determined erosion rate to a controller that determines a duration of the timed overpolish operations to be performed on at least one subsequently processed wafer at the second platen, and performing the timed overpolish operation on the at least one subsequently processed wafer at the second platen for the duration determined by the controller.

Method And Apparatus For Controlling A Tool Using A Baseline Control Script

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US Patent:
6615098, Sep 2, 2003
Filed:
Feb 21, 2001
Appl. No.:
09/789871
Inventors:
Christopher A. Bode - Austin TX
Alexander J. Pasadyn - Austin TX
Anthony J. Toprac - Austin TX
Joyce S. Oey Hewett - Austin TX
Anastasia Oshelski Peterson - Austin TX
Thomas J. Sonderman - Austin TX
Michael L. Miller - Cedar Park TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G06F 1760
US Classification:
700121, 700116
Abstract:
A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a control routine for the selected tool based on the tool type; and executing the control routine to generate a control action for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script. The control executor is adapted to execute the baseline control script, determine a tool type based on the context information, select a control routine for the selected tool based on the tool type, and execute the control routine to generate a control action for the selected tool.

Automated Method Of Controlling Critical Dimensions Of Features By Controlling Stepper Exposure Dose, And System For Accomplishing Same

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US Patent:
6632692, Oct 14, 2003
Filed:
Jan 11, 2001
Appl. No.:
09/758765
Inventors:
Joyce S. Oey Hewett - Austin TX
Alexander J Pasadyn - Austin TX
Anthony J. Toprac - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
H01L 2166
US Classification:
438 18
Abstract:
The present invention is directed to an automated method of controlling critical dimensions of features by controlling the stepper exposure dose, and a system for accomplishing same. In one embodiment, the method comprises measuring a critical dimension (FICD) of a plurality of features formed in a process layer, and providing the measured critical dimensions of the features to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer. In another embodiment, the method comprises measuring a critical dimension (DICD) of a plurality of features formed in a patterned layer of photoresist, providing the measured critical dimensions of the features in the patterned layer of photoresist to a controller that determines, based upon the measured critical dimensions, an exposure dose of an exposure process to be performed on at least one subsequently processed wafer. In some embodiments, both the FICD measurements and the DICD measurements are used to determine the exposure dose.

Methods Of Characterizing Device Performance Based Upon The Duration Of An Endpointed Photoresist Develop Process, And System For Accomplishing Same

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US Patent:
6664013, Dec 16, 2003
Filed:
Nov 7, 2001
Appl. No.:
10/045536
Inventors:
Joyce S. Oey Hewett - Austin TX
Christopher A. Bode - Austin TX
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G03F 720
US Classification:
430 30, 430311, 430313, 430325, 430326, 396578
Abstract:
In one illustrative embodiment, the method comprises initiating a develop process on a layer of photoresist formed above a wafer, indicating an endpoint of the develop process, determining a duration of the endpoint develop process, and determining if the determined duration of the develop process is not within a preselected range. In another aspect, the present invention is directed to a system that comprises a develop station for performing a develop process on a layer of photoresist formed above a wafer, a develop endpoint detector for indicating an endpoint of the develop process, and a controller for determining if a duration of the develop process is not within a preselected range.
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Joyce Sian Oey from Austin, TX, age ~55 Get Report