Joseph Yahalom

6830673, Dec 14, 2004

Jan 4, 2002

10/039275

Joseph Yahalom - Emeryville CA
David Starosvetsky - Yokneam Elit, IL
Joseph Hazan - Haifa, IL

Applied Materials, Inc. - Santa Clara CA

C25D 2112

205 83, 2042281, 2042291, 2042301, 204237, 204280, 204292, 204293, 205 96, 205292, 205294

A higher applied potential may be provided to a consumable anode to reduce sludge formation during electroplating. For example, a higher applied potential may be provided to a consumable anode by decreasing the exposed surface area of the anode to the electrolyte solution in the electroplating cell. The consumable anode may comprise a single anode or an array of anodes coupled to the positive pole of the power source in which the exposed surface area of the anode is less than an exposed surface area of the cathode to the electrolyte solution. In another example, a higher applied potential may be provided to a consumable anode by increasing the potential of the electroplating cell.

6899816, May 31, 2005

Apr 3, 2002

10/117711

Deenesh Padhi - San Jose CA, US
Joseph Yahalom - Emeryville CA, US
Sivakami Ramanathan - Fremont CA, US
Chris R. McGuirk - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Girish Dixit - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

B44C001/22
B05D003/04
B05D003/10

216 52, 216 53, 427301, 427304, 427305

Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

6905622, Jun 14, 2005

Apr 3, 2002

10/117712

Deenesh Padhi - San Jose CA, US
Joseph Yahalom - Emeryville CA, US
Sivakami Ramanathan - Fremont CA, US
Chris R. McGuirk - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Girish Dixit - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

B44C001/22
B05D003/04
B05D003/10

216 52, 216 53, 427301, 427304, 427305

Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

6951599, Oct 4, 2005

Jul 1, 2002

10/188163

Joseph Yahalom - Emeryville CA, US
Deenesh Padhi - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Girish A. Dixit - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

C25F007/00

2042302, 204224 M

Embodiments of the present invention generally relate to a method and apparatus for planarizing a substrate by electropolishing techniques. Certain embodiments of an electropolishing apparatus include a contact ring adapted to support a substrate, a cell body adapted to hold an electropolishing solution, a fluid supply system adapted to provide the electropolishing solution to the cell body, a cathode disposed within the cell body, a power supply system in electrical communication with the contact ring and the cathode, and a controller coupled to at least the fluid supply system and the power supply system. The controller may be adapted to provide a first set of electropolishing conditions to form a boundary layer between the substrate and the electropolishing solution to an initial thickness and may be adapted to provide a second set of electropolishing conditions to control the boundary layer to a subsequent thickness less than or equal to the initial thickness.

7138039, Nov 21, 2006

Jan 21, 2003

10/348800

Vincent E. Burkhart - San Jose CA, US
Harald Herchen - Los Altos CA, US
Joseph Yahalom - Emeryville CA, US

Applied Materials, Inc. - Santa Clara CA

B23H 3/04
C25D 17/06

2042861, 204224 R, 204287, 2042883, 20429701, 20429706, 20429708, 20429709, 2042971, 20429714

Embodiments of the invention may further provide a contact ring for an electrochemical plating system. The contact generally includes a substrate receiving member having a substrate support surface formed thereon, a plurality of electrical contact pins extending from the substrate support surface, a first seal positioned on the substrate support surface radially inward of the plurality of electrical contacts, and a second seal positioned radially outward of the plurality of electrical contacts. Additionally, the contact ring generally includes a fluid inlet configured to supply a fluid to a volume between the first seal and the second seal.

20030190426, Oct 9, 2003

Apr 3, 2002

10/117710

Deenesh Padhi - San Jose CA, US
Joseph Yahalom - Emeryville CA, US
Sivakami Ramanathan - Fremont CA, US
Chris McGuirk - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Girish Dixit - San Jose CA, US

B05D003/10
B05D001/36

427/307000, 427/404000, 427/304000

Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

20040200725, Oct 14, 2004

Apr 9, 2003

10/410105

Joseph Yahalom - Emeryville CA, US
Mei Wen - King of Prussia PA, US
Roman Mostovoy - San Francisco CA, US

Applied Materials Inc.

C25D021/06
C25D021/16

205/098000

Embodiments of the invention provide a method and formulations for preventing foam formation inside a plating apparatus prior to or during plating a material on a substrate. In one embodiment, a method for preventing foam formation inside a plating apparatus designed for plating a material on a substrate includes providing an electrolyte solution containing at least one antifoaming agent, at least one metal ion source, and a supporting electrolyte. The method further includes placing the substrate onto a substrate holder of the plating apparatus, immersing the substrate in the electrolyte solution, and depositing the material onto the substrate.

43167799, Feb 23, 1982

Sep 26, 1980

6/191166

Joseph Yahalom - Summit NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

C25D 352
C25D 534

204 29

A process and bath composition is described for the electroplating of palladium. The bath contains a source of palladium and thiourea or related compounds to prevent poisoning of the bath from copper ions contained on surfaces to be plated. It is particularly useful in palladium electroplating processes where foreign ions such as copper ions adversely affect the plating process. Such contamination is likely to occur where palladium is electroplated on copper or copper alloy surfaces such as are used in electrical contact devices such as switches, relays, connectors, etc. The palladium electroplating process and bath described in the disclosure yields excellent results even where extensive impurities such as copper ions have been introduced into the plating bath.