Joseph J Pernyeszi

6573550, Jun 3, 2003

Apr 6, 2001

09/827399

Joseph Pernyeszi - Scotts Valley CA

General Electronics Applications, Inc. - Scotts Valley CA

H01L 2976

257302, 257344, 257304

A method and apparatus for increasing a breakdown voltage of a semiconductor device. The semiconductor device is constructed within an epitaxial tub of a first conductivity type formed within a dielectric material and comprises a surface diffusion region of a second conductivity type, opposite that of the first conductivity type, extending into the epitaxial tub, a trench surrounding and electrically isolating the epitaxial tub, a metal line coupled to the surface diffusion traversing the semiconductor device and the trench, a first field limiting diffusion region of the second conductivity type disposed between the surface diffusion region and the trench and below the metal line, a poly field plate positioned over the trench and beneath the metal line, and a first contact coupled to the field limiting diffusion region, the first contact extending below the metal line and overlapping the poly field plate.

6992362, Jan 31, 2006

Apr 14, 2003

10/413852

Joseph Pernyeszi - Scotts Valley CA, US

General Electronics Applications, Inc. - Scotts Valley CA

H01L 29/76

257500, 257302, 257490

A method and apparatus for increasing a breakdown voltage of a semiconductor device. The semiconductor device is constructed within an epitaxial tub of a first conductivity type formed within a dielectric material and comprises a surface diffusion region of a second conductivity type, opposite that of the first conductivity type, extending into the epitaxial tub, a trench surrounding and electrically isolating the epitaxial tub, a metallization line coupled to the surface diffusion traversing the semiconductor device and the trench, a first field limiting diffusion region of the second conductivity type disposed between the surface diffusion region and the trench and below the metallization line, a poly field plate positioned over the trench and beneath the metallization line, and a first contact coupled to the field limiting diffusion region, the first contact extending below the metallization line and overlapping the poly field plate.

8324684, Dec 4, 2012

Apr 5, 2011

13/080485

Joseph Pernyeszi - Scotts Valley CA, US

General Microelectronics Corporation - Santa Clara CA

H01L 29/66

257337

A planar, monolithic, high-voltage (HV), integrated circuit (IC) includes power field-effect-transistors (FETs) and/or bipolar power-transistors having an HV diffusion connection. The HV IC further includes several types of HV, low-current (LC) FETs including depletion and/or enhancement mode transistors and/or HV-LC bipolar transistors. The HV-LC transistors are integrated into the HV-high-current (HC) or power transistor structure in various combinations by sharing their HV diffusion connections, which enables increased design versatility while minimizing die area. Isolation and buried diffusion structures provide higher operating voltage and/or enhanced depletion FET shut-off. HV-LC IGFET body and/or bipolar transistor base regions are either isolated from or connected to the grounded isolation diffusion further enhancing design versatility.

50310178, Jul 9, 1991

Jan 29, 1988

7/149766

Joseph Pernyeszi - Scotts Valley CA
Michael D. Walters - San Jose CA
Kevin Venor - Ft. Collins CO

Hewlett-Packard Company - Palo Alto CA

H01L 2702

357 41

An opaque shield is provided for integrated circuits and comprises reflective particles of titanium dioxide and light-absorbing particles of carbon black suspended in polyimide. The reflective particles increase the effective path length of light traversing the carrier so that a much lower concentration of carbon black is required to render the shield opaque. The concentration of carbon black can be low enough so that its conductivity does not impair operation of the integrated circuit. In addition to shielding the integrated circuit from light, the shield also protects the integrated circuit from contamination. A fluid precursor material is formed by mixing titanium dioxide and carbon black particles into a polyamic acid solution. This solution is diluted, filtered and vacuum distilled to yield a suspension free of over-sized particles. The resulting suspension can be applied and patterned using conventional semiconductor processing techniques.

48641260, Sep 5, 1989

Jun 17, 1988

7/207809

Michael D. Walters - San Jose CA
Joseph Pernyeszi - Scotts Valley CA
John F. Petrilla - Palo Alto CA

Hewlett-Packard Company - Palo Alto CA

G02B 2700

250551

A solid state relay uses an optically controlled shunt and series enhancement circuit between a photodiode array and an output device to provide enhanced turn-off and transient immunity characteristics. A Faraday shield may be used to cover optically active components and to provide protection against false turn-on and turn-off caused by the transients.

49805681, Dec 25, 1990

May 22, 1989

7/355443

Stephen P. Merrick - San Jose CA
Joseph Pernyeszi - Scotts Valley CA

Hewlett-Packard Company - Palo Alto CA

G02B 2700

250551

A high voltage optical isolator has a light emitting diode which illuminates a photodetector for conveying a signal by optical means while isolating the input voltage from the output. The LED is spaced from the photodetector by an extension on an opaque reflective light guide around the optical path between the LED and photodetector. The light guide has a transparent silicone resin medium in a light passage between the LED and photodetector. The internal and external portions of the light guide provide elongated crooked paths for enhancing electrical breakdown resistance. The entire optical isolator is packaged in a conventional DIP. Isolation voltages of 5,000 volts or more and enhancement of light flux coupling up to 300% are obtained.

58475931, Dec 8, 1998

Mar 25, 1997

8/822742

Joseph Pernyeszi - Scotts Valley CA

Siemens Microelectronics, Inc

H03K 1760

327432

A circuit for discharging of a photovoltaic power source has a first and a second terminal and the circuit comprises a discharge circuit which is connected between the first and second terminal of the power source which comprises a controllable current source which is controlled by a band gap reference.

62361007, May 22, 2001

Jan 28, 2000

9/493955

Joseph Pernyeszi - Scotts Valley CA

General Electronics Applications, Inc. - Scotts Valley CA

H01L 2176
H01L 2900

257500

A method and apparatus for increasing a breakdown voltage of a semiconductor device. The semiconductor device is constructed on a semiconductor substrate including an isolation diffusion region around the semiconductor device, a substrate layer, an epi layer on top of the substrate layer, a surface diffusion region extending into the epi layer from a top surface of the epi layer and a metallization line coupled to the surface diffusion, wherein the metallization line traverses the semiconductor device and the isolation diffusion region. The semiconductor device also includes a poly field plate over the isolation diffusion region and beneath the metallization line, a field limiting diffusion region provided in the epi layer between the surface diffusion region and the isolation diffusion region and below the metallization line, and a contact coupled to the field limiting diffusion region, wherein the contact extends to a region below the metallization line and overlapping the poly field plate.