John K Boah

49535110, Sep 4, 1990

Dec 22, 1989

7/454886

John K. Boah - Manlius NY
Charles T. Cooney - Syracuse NY
Stephen A. Schoch - Clay NY
Howard W. Sibley - Baldwinsville NY

Carrier Corporation - Syracuse NY

F22B 502

122 18

A condensing heating module for heating a fluid and adapted for use with a radiant infrared burner. The heat exchanger within the module is spirally disposed about a central burner cavity and has a fluid flow passage of serpentine shape formed within its wall. The upper and lower surfaces of the module, together with the spiral wall of the heat exchanger, form a spiral condensing flue leading from the central burner cavity to an external flue. Those portions of the spiral heat exchanger wall and the module upper and lower surfaces which are exposed to direct radiation from the burner are formed of a corrosion resistant steel, while the remainder of the surfaces and wall are formed of carbon steel to which has been laminated a layer of polypropylene such that the polypropylene layer will be exposed to the flue gas and condensate environment and provide corrosion protection to the carbon steel.

41047869, Aug 8, 1978

Feb 11, 1977

5/767946

John K. Boah - Port Byron NY
Richard W. Kennedy - Skaneateles NY

General Electric Company - Auburn NY

B01J 1700

29583

Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Isolation regions of the opposite conductivity type are formed by the temperature gradient zone melting process to separate the wafer into a plurality of device regions. Peripheral grooves are cut in one major surface in each device region. The grooves extend into the interior region thus electrically isolating the portion of the major surface within the grooves from the other major surface. The grooves are filled with a passivation material.

40412784, Aug 9, 1977

May 19, 1975

5/578736

John K. Boah - Auburn NY

General Electric Company - Auburn NY

H05B 302
F27D 1102
H01L 21324
F27D 500

219411

An apparatus for practicing temperature gradient zone melting includes a transparent tubular quartz glass work chamber for receiving a body of semiconductor material to be processed. An infrared radiation source is optically coupled to the interior of the chamber through a wall of the chamber for irradiating one surface of the semiconductor body. A metallic cooling block is placed in direct heat conductive engagement with the exterior of the tubular work chamber opposite to the infrared source to remove heat from the surface of the body opposite said one surface, thus making the temperature gradient set up in the body more uniform and unidirectional. The semiconductor body is supported in the chamber by support means making minimal thermal contact with the surface of the body opposite the said one surface. The chamber may be provided with closure means so that a closed atmosphere can be established therein.

40010473, Jan 4, 1977

May 19, 1975

5/578807

John K. Boah - Auburn NY

General Electric Company - Syracuse NY

H01L 21225

148 15

Disclosed is a method for selectively doping semiconductor materials utilizing temperature gradient zone melting. The required temperature gradient is provided by infrared radiation impinging on and heating one surface of a body of semiconductor material to be doped. The heat is conducted through the body creating a temperature gradient.