Johannes Te Grandia

43501168, Sep 21, 1982

Dec 22, 1980

6/219075

Johannes Grandia - San Jose CA
William G. McChesney - San Jose CA
Hugo A. E. Santini - San Jose CA
Harold L. Turk - San Jose CA

International Business Machines Corporation - Armonk NY

B05C 1302

118500

A holder for liquid phase epitaxial (LPE) growth which eliminates mesas on the surface of the film is described. The holder has two legs to which a ring is connected. The ring has holding means so that it can hold one wafer or two wafers back-to-back. One of the two legs extends vertically below the first ring. In a preferred embodiment a second ring having holding means for a pair of wafers back-to-back is attached to the elongated leg. This holder structure prevents a film from the liquid melt from forming when the holder is withdrawn from the liquid growth solution, thereby eliminating the formation of mesas which occur when the film ruptures.

43046410, Dec 8, 1981

Nov 24, 1980

6/209779

Johannes Grandia - San Jose CA
Daniel F. O'Kane - Morgan Hill CA
Hugo A. E. Santini - San Jose CA

International Business Machines Corporation - Armonk NY

C25D 508
C25D 1700

204 23

An apparatus and a method for rotary electroplating a thin metallic film having a uniform thickness and composition throughout. The apparatus includes a flow-through jet plate having nozzles of increasing size and uniformly spaced radially therethrough, or the same sized nozzles with varying radial spacing therethrough so as to provide a differential flow distribution of the plating solution that impinges on the wafer-cathode where the film is deposited. The spacing and size of the nozzles are critical to obtaining a uniform thickness. The electrical currents to the wafer and to the thieving ring are controlled by variable resistors so as to keep the electrical current to the cathode constant throughout the plating process. In a preferred embodiment the flow-through jet plate has an anode associated therewith in which the exposed area of the anode is maintained at a constant amount during the deposition. This method can simultaneously deposit with a uniform thickness and composition elements having a minimum gap or part size of 1 micrometer or less.

40843548, Apr 18, 1978

Jun 3, 1977

5/803082

Johannes Grandia - San Jose CA
John Charles Hill - San Jose CA

International Business Machines Corporation - Armonk NY

B24B 102

51283R

A process for slicing boules of a single crystal material such as gadolinium gallium garnet (GGG) into wafers is described. The boule is prepared, by grinding preferably, so that the longitudinal boule axis corresponds to the crystallographic orientation axis of the boule. The boule is then mounted in a fixture and aligned so that the common longitudinal axis and crystallographic orientation axis is perpendicular to the saw blade. The boule is then rotated while maintaining the orientation of the combined common axis and engaged against an inner diameter rotating saw blade for a time sufficient for the blade to slice through the boule and form a wafer. The wafers obtained by this slicing process may be directly polished without the conventional lapping step to form a wafer having a surface that is substantially flat, parallel and defect free.