US Patent:
20120212245, Aug 23, 2012
Inventors:
Angelo Pinto - San Diego CA, US
Martin L. Villafana - Bonita CA, US
You-Wen Yau - San Diego CA, US
Homyar C. Mogul - San Diego CA, US
Lavakumar Ranganathan - San Diego CA, US
Rohan V. Gupte - San Diego CA, US
Weijia Qi - San Diego CA, US
Kent J. Pingrey - San Diego CA, US
Carlos P. Aguilar - San Diego CA, US
Paul J. Giotta - Redington Beach FL, US
Leon Y. Leung - San Diego CA, US
Jina M. Antosz - Escondido CA, US
Bhupen M. Shah - Carlsbad CA, US
Choh fei Yeap - San Diego CA, US
Michael J. Campbell - Encinitas CA, US
Lawrence A. Elugbadebo - San Diego CA, US
Allen A.B. Hogan - San Diego CA, US
Assignee:
QUALCOMM Incorporated - San Diego CA
International Classification:
G01R 31/3187
H01L 23/58
US Classification:
3247503, 257 48, 257E23002
Abstract:
An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.
