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Jerome Napierala

from Painted Post, NY
Age ~51
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Also known as:
Beatrice Napierala
Phone and address:
6 Overbrook Rd, Painted Post, NY 14870
(607) 936-0507
Connected to:
Abbie M Napier, 31Adrian S Napier, 42Ali Napier, 44Amanda Napierala, 42Arlene Napier, 67Benjamin A Napier, 77Beth Napier, 43Breann Napier, 29Brittney K Napier, 38Brody Napier, 46

Jerome Napierala Phones & Addresses

  • 6 Overbrook Rd, Painted Post, NY 14870 (607) 936-0507
  • 2683C Spencer Hill Rd, Corning, NY 14830
  • Port Matilda, PA
  • Adams, MA
  • Minneapolis, MN

Publications

Us Patents

Native Green Laser Semiconductor Devices

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US Patent:
7965752, Jun 21, 2011
Filed:
Nov 30, 2009
Appl. No.:
12/627814
Inventors:
Rajaram Bhat - Painted Post NY, US
Chad Stephen Gallinat - Santa Barbara CA, US
Jerome Napierala - Painted Post NY, US
Dmitry Sizov - Corning NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01S 5/00
US Classification:
372 45012, 372 44011
Abstract:
A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.

Mqw Laser Structure Comprising Plural Mqw Regions

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US Patent:
7983317, Jul 19, 2011
Filed:
Dec 16, 2008
Appl. No.:
12/336050
Inventors:
Rajaram Bhat - Painted Post NY, US
Jerome Napierala - Painted Post NY, US
Dmitry Sizov - Corning NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01S 5/00
US Classification:
372 4501, 372 4601, 372 4301
Abstract:
Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

Mqw Laser Structure Comprising Plural Mqw Regions

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US Patent:
8121165, Feb 21, 2012
Filed:
Jun 16, 2011
Appl. No.:
13/161962
Inventors:
Rajaram Bhat - Painted Post NY, US
Jerome Napierala - Painted Post NY, US
Dmitry Sizov - Corning NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01S 5/00
US Classification:
372 45012, 372 4501, 372 4301
Abstract:
Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.

Gallium Nitride Semiconductor Device On Soi And Process For Making Same

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US Patent:
8217498, Jul 10, 2012
Filed:
Oct 18, 2007
Appl. No.:
11/975289
Inventors:
Rajaram Bhat - Painted Post NY, US
Kishor Purushottam Gadkaree - Big Flats NY, US
Jerome Napierala - Painted Post NY, US
Linda Ruth Pinckney - Corning NY, US
Assignee:
Corning Incorporated - Corning NY
International Classification:
H01L 21/36
US Classification:
257615, 257347, 257352, 257E21098, 438455
Abstract:
Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.

Gan Lasers On Aln Substrates And Methods Of Fabrication

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US Patent:
20080299691, Dec 4, 2008
Filed:
Aug 15, 2007
Appl. No.:
11/893188
Inventors:
Rajaram Bhat - Painted Post NY, US
Jerome Napierala - Painted Post NY, US
Dmitry Sizov - Painted Post NY, US
International Classification:
H01L 21/02
H01S 5/00
US Classification:
438 31, 372 45011, 257E21002
Abstract:
Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga(In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer where the substrate, the lattice adjustment layer, the lower cladding region, the active waveguiding region, the upper cladding region, and the N and P type contact regions of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.

Enhanced P-Contacts For Light Emitting Devices

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US Patent:
20110049469, Mar 3, 2011
Filed:
Sep 3, 2009
Appl. No.:
12/553288
Inventors:
Rajaram Bhat - Painted Post NY, US
Jerome Napierala - Painted Post NY, US
Dmitry Sizov - Corning NY, US
Jingqun Xi - Cambridge MA, US
International Classification:
H01L 33/00
US Classification:
257 13, 257E33008
Abstract:
An optoelectronic light emitting semiconductor device is provided comprising an active region, a p-type Group III nitride layer, an n-type Group III nitride layer, a p-side metal contact layer, an n-side metal contact layer, and an undoped tunneling enhancement layer. The p-side metal contact layer is characterized by a work function W satisfying the following relation:where eis the electron affinity of the undoped tunneling enhancement layer. The undoped tunneling enhancement layer and the p-type Group III nitride layer comprise conduction and valence energy bands. The top of the valence band V of the undoped tunneling enhancement layer is above the top of the valence band V of the p-type Group III nitride layer at the band offset interface to generate a capacity for a relatively high concentration of holes in the undoped tunneling enhancement layer at the band offset interface. Additional embodiments are disclosed and claimed.

Gallium Nitride Semiconductor Device On Soi And Process For Making Same

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US Patent:
20120252191, Oct 4, 2012
Filed:
Jun 12, 2012
Appl. No.:
13/494110
Inventors:
Rajaram Bhat - Painted Post NY, US
Kishor Purushottam Gadkaree - Big Flats NY, US
Jerome Napierala - Painted Post NY, US
Linda Ruth Pinckney - Corning NY, US
International Classification:
H01L 21/20
US Classification:
438478, 257E2109
Abstract:
Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
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Jerome Napierala from Painted Post, NY, age ~51 Get Report