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Jaydeep Sarkar

from Thiells, NY
Age ~56

Jaydeep Sarkar Phones & Addresses

  • 8 Crescent Dr, Thiells, NY 10984 (845) 786-3253
  • Spring Valley, NY
  • 14 Jeanne Marie Gdns, Nanuet, NY 10954
  • Maine, NY

Publications

Us Patents

Method And Apparatus For Treating Sputtering Target To Reduce Burn-In Time And Sputtering Targets Made Thereby

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US Patent:
20080121516, May 29, 2008
Filed:
Nov 29, 2006
Appl. No.:
11/605406
Inventors:
Jaydeep Sarkar - Thiells NY, US
Peter McDonald - Pearl River NY, US
Paul S. Gilman - Suffern NY, US
International Classification:
C23C 14/02
US Classification:
20419212
Abstract:
A method for dry treating a sputter target using a plasma to significantly reduce burn-in time of the target by removing surface contaminants and also a minimal thickness of the deformed layer characteristics of a machined surface, the target so produced, and apparatus used for the target treatment.

Ternary Aluminum Alloy Films And Targets For Manufacturing Flat Panel Displays

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US Patent:
20090022622, Jan 22, 2009
Filed:
Apr 3, 2006
Appl. No.:
11/395360
Inventors:
Jaydeep Sarkar - Thiells NY, US
Chi-Fung Lo - Fort Lee NJ, US
Paul S. Gilman - Suffern NY, US
International Classification:
C22C 21/00
US Classification:
420551
Abstract:
A physical vapor deposition target for the manufacturing of flat panel displays is provided. The target includes a ternary alloy system having, by atom percent, a first component in an amount of about 90 to 99.98, wherein the first component is aluminum, a second component in an amount of about 0.01 to 2.0, wherein the second component is a rare earth element is selected from the group consisting of Nd, Ce, Dy and Gd, and a third component in an amount of about 0.01 to 8.0, wherein the third element is selected from the group consisting of Ni, Co, Mo, Sc, and Hf.

Gold Evaporative Sources With Reduced Contaminants And Methods For Making The Same

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US Patent:
20180029096, Feb 1, 2018
Filed:
Sep 26, 2017
Appl. No.:
15/715892
Inventors:
- North Haven CT, US
Ernesto Aviles - Monroe NY, US
Jaydeep Sarkar - Thiells NY, US
Paul S. Gilman - Suffern NY, US
International Classification:
B21C 1/00
B24B 39/00
C22B 9/14
C23C 14/56
C22C 5/02
C23C 14/14
C23G 1/10
B21C 47/02
C22B 3/00
C23C 14/24
B08B 3/10
B08B 3/12
B08B 3/08
B24B 31/06
Abstract:
A unique sequence of steps is provided to reduce contaminants along one or more surfaces and faces of gold evaporative sources without deleteriously impacting the structure of the gold evaporative sources. Edges are deburred; contaminants are successfully removed therealong; and surface smoothness is substantially retained. The resultant gold evaporative source is suitable for use in evaporative processes as a precursor to gold film deposition without the occurrence or a substantial reduction in the likelihood of spitting by virtue of significantly reduced levels of contaminants, in comparison to gold evaporative sources subject to a standard cleaning protocol.

Gold Evaporative Sources With Reduced Contaminants And Methods For Making The Same

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US Patent:
20150315696, Nov 5, 2015
Filed:
May 1, 2014
Appl. No.:
14/266975
Inventors:
Wendell R. Stuber - Pine Bush NY, US
Ernesto Aviles - Monroe NY, US
Jaydeep Sarkar - Thiells NY, US
Paul S. Gilman - Suffern NY, US
International Classification:
C23C 14/14
C23C 14/24
B21C 1/00
B24B 39/00
B21C 47/02
C22B 3/00
C22C 5/02
Abstract:
A unique sequence of steps is provided to reduce contaminants along one or more surfaces and faces of gold evaporative sources without deleteriously impacting the structure of the gold evaporative sources. Edges are deburred; contaminants are successfully removed therealong; and surface smoothness is substantially retained. The resultant gold evaporative source is suitable for use in evaporative processes as a precursor to gold film deposition without the occurrence or a substantial reduction in the likelihood of spitting by virtue of significantly reduced levels of contaminants, in comparison to gold evaporative sources subject to a standard cleaning protocol.

Diffusion Bonded High Purity Copper Sputtering Target Assemblies

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US Patent:
20150170889, Jun 18, 2015
Filed:
Dec 13, 2013
Appl. No.:
14/105589
Inventors:
Jaydeep Sarkar - Thiells NY, US
Paul Gilman - Suffern NY, US
International Classification:
H01J 37/34
Abstract:
The present invention relates to novel and improved high purity diffusion bonded copper (Cu) sputtering targets having a Cu purity level of 99.9999% (6N) or greater. The target assemblies of the present invention exhibit sufficient bond strength and microstructural homogeneity, both of which are properties previously considered mutually exclusive for conventional 6N Cu target assemblies. The grain structure is characterized by an absence of alloying elements and the bonded interface is generally flat without any type of interlayer or interlocking arrangement.
Jaydeep Sarkar from Thiells, NY, age ~56 Get Report