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Hicham Sougrati Phones & Addresses

  • Elk Grove, CA
  • San Jose, CA
  • Santa Clara, CA
  • Sacramento, CA
  • Santa Cruz, CA
  • Burlingame, CA
  • Foster City, CA
  • Davis, CA
  • Pacifica, CA
  • 9894 Spring Blossom Pl, Elk Grove, CA 95757 (650) 401-6608

Work

Position: Clerical/White Collar

Education

Degree: High school graduate or higher

Publications

Us Patents

Controlled Lapping For An Abs Damascene Process

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US Patent:
8082658, Dec 27, 2011
Filed:
Feb 25, 2008
Appl. No.:
12/036478
Inventors:
Glenn P. Gee - San Jose CA,
Paul A. Goddu - San Jose CA,
John P. Herber - Morgan Hill CA,
Hicham M. Sougrati - Burlingame CA,
Huey-Ming Tzeng - San Jose CA,
Assignee:
Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam
International Classification:
H04R 31/00
US Classification:
2960309, 2960307, 296031, 2960312, 2960315
Abstract:
Methods of lapping rows of recording heads are described after an air bearing surface (ABS) damascene process is performed. The ABS damascene process uses a selective etching process to form voids in the row of recording heads where conductive material forms a feature in the recording head, such as a wrap around shield. The conductive material is then deposited on the ABS of the row to fill the voids, and the row is lapped. According to methods provided herein, the resistance of one or more lapping guides in the row of recording heads is monitored to determine when the conductive material is removed by the lapping process. When the monitored resistance indicates that the conductive material is removed, the lapping process is stopped. The resistance across one or more lapping guides may also be used to control the lapping process to uniformly lap the conductive material from the ABS.

Method For Manufacturing A Magnetoresistive Sensor Having A Flat Shield

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US Patent:
8296930, Oct 30, 2012
Filed:
Dec 22, 2009
Appl. No.:
12/645323
Inventors:
Shin Funada - Pleasanton CA,
Quang Le - San Jose CA,
Thomas L. Leong - San Jose CA,
Jui-Lung Li - San Jose CA,
Ning Shi - San Jose CA,
Hicham M. Sougrati - Burlingame CA,
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G11B 5/127
H04R 31/00
US Classification:
2960314, 2960312, 2960313, 2960315, 2960316, 2960318, 216 62, 216 65, 216 66, 3603241, 36032411, 36032412, 3603242, 451 5, 451 41
Abstract:
A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.

Tmr Reader Without Dlc Capping Structure

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US Patent:
8553371, Oct 8, 2013
Filed:
Nov 24, 2010
Appl. No.:
12/954508
Inventors:
Honglin Zhu - Fremont CA,
Liubo Hong - San Jose CA,
Hicham M. Sougrati - Burlingame CA,
Quang Le - San Jose CA,
Jui-Lung Li - San Jose CA,
Chando Park - Palo Alto CA,
Assignee:
HGST Netherlands B.V. - Amsterdam
International Classification:
G11B 5/39
US Classification:
3603242, 360319
Abstract:
Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.

Determining Smear Of A Hard Disk Drive Slider

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US Patent:
2008027, Nov 6, 2008
Filed:
May 3, 2007
Appl. No.:
11/800262
Inventors:
Glenn P. Gee - San Jose CA,
David J. Seagle - Morgan Hill CA,
Hicham M. Sougrati - Burlingame CA,
Jila Tabib - Los Gatos CA,
Xiao Z. Wu - San Jose CA,
International Classification:
G11B 21/02
US Classification:
3602343
Abstract:
A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated sensor for measuring resistance wherein the resistance corresponds to a level of smear associated with the head slider.

Method For Creating A Magnetic Write Pole Having A Stepped Perpendicular Pole Via Cmp-Assisted Liftoff

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US Patent:
2010015, Jun 24, 2010
Filed:
Dec 23, 2008
Appl. No.:
12/343044
Inventors:
Amanda Baer - Campbell CA,
Wen-Chien David Hsiao - San Jose CA,
John I. Kim - San Jose CA,
Yinshi Liu - Foster City CA,
Vladimir Nikitin - Campbell CA,
Trevor W. Olson - San Jose CA,
Hicham Moulay Sougrati - Burlingame CA,
Yuan Yao - Fremont CA,
International Classification:
B44C 1/22
US Classification:
216 22
Abstract:
A method for manufacturing a magnetic write head having a stepped, recessed, high magnetic moment pole connected with a write pole. The stepped pole structure helps to channel magnetic flux to the write pole without leaking write field to the magnetic medium. This allows the write head to maintain a high write field strength at very small bit sizes. The method includes depositing a dielectric layer and a first CMP layer over substrate that can include a magnetic shaping layer. A mask is formed over the dielectric layer, the mask having an opening to define the stepped pole structure. The image of the mask is transferred into the dielectric layer. A high magnetic moment material is deposited and a chemical mechanical polishing is performed to planarize the magnetic material and dielectric layer.

Magnetic Read Sensor Having Flat Shield Profile

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US Patent:
2013016, Jun 27, 2013
Filed:
Dec 22, 2011
Appl. No.:
13/335657
Inventors:
Hicham M. Sougrati - Elk Grove CA,
Quang Le - San Jose CA,
Honglin Zhu - Fremont CA,
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G11B 5/127
US Classification:
360319, G9B 504
Abstract:
A magnetic read sensor having a flat shield for improved gap thickness definition and control. The magnetic read head includes a sensor stack and hard bias layer formed at either side of the sensor stack. A SiNx hard bias capping layer is formed over the hard bias layers between the hard bias structure and the upper magnetic shield. The hard bias capping layer has an upper surface that has been planarized by chemical mechanical polishing that is co-planar with an upper surface of the sensor stack. The read sensor is constructed by a method wherein the hard bias capping layer is constructed of a material (e.g. SiNx) that is also used as a CMP stop layer and that can be planarized by chemical mechanical polishing while having some resistance to removal by chemical mechanical polishing.

Differentiated Liftoff Process For Ultra-Shallow Mask Defined Narrow Trackwidth Magnetic Sensor

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US Patent:
2013028, Oct 31, 2013
Filed:
Apr 27, 2012
Appl. No.:
13/458374
Inventors:
Yi Zheng - San Ramon CA,
Guomin Mao - San Jose CA,
Hicham M. Sougrati - Elk Grove CA,
Xiaozhong Dang - Fremont CA,
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G11B 5/33
US Classification:
216 22
Abstract:
A method for manufacturing a magnetic read sensor allows for the construction of a very narrow trackwidth sensor while avoiding problems related to mask liftoff and shadowing related process variations across a wafer. The process involves depositing a plurality of sensor layers and forming a first mask structure. The first mask structure has a relatively large opening that encompasses a sensor area and an area adjacent to the sensor area where a hard bias structure can be deposited. A second mask structure is formed over the first mask structure and includes a first portion that is configured to define a sensor dimension and a second portion that is over the first mask structure in the field area.
Hicham M Sougrati from Elk Grove, CA, age ~50 Get Report