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Harish Bhaskaran

from Baltimore, MD
Age ~45
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Related to:
Surekha B Ramaswamy, 53Bhaskaran S RamaswamyRamaswamy Lakshmanan, 94Lakshmanan Ramaswamy, 56
Connected to:
Aditya S Bhaskar, 28Anjali M Bhaskar, 47Anu Bhaskar, 39Atul Bhaskar, 39Bharat Bhaskar, 42Gayathri Y Bhaskar, 75Jayakumar Bhaskaran, 66Mahesh B Bhaskarpandit, 54Meera Bhaskar, 34Milind Bhaskarwar, 40

Harish Bhaskaran Phones & Addresses

  • Baltimore, MD
  • New Haven, CT
  • Princeton, NJ
  • 432 Ridge Rd, Greenbelt, MD 20770
  • 151 Westway, Greenbelt, MD 20770 (301) 474-1314
  • 8565 Greenbelt Rd, Greenbelt, MD 20770
  • 9006 Highland Dr, Hyattsville, MD 20783 (301) 434-0298
  • Adelphi, MD

Publications

Us Patents

Method Of Fabricating A Semiconductor Device

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US Patent:
20110269302, Nov 3, 2011
Filed:
Apr 8, 2011
Appl. No.:
13/083057
Inventors:
Harish Bhaskaran - New Haven CT, US
Mikael T. Bjoerk - Affoltern am Albis, CH
Michel Despont - Zurich, CH
Bernd W. Gotsmann - Horgen, CH
Heinz Schmid - Waedenswil, CH
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/265
US Classification:
438530, 257E21334
Abstract:
The invention relates to a method of fabricating a semiconductor device. The method includes: providing a semiconductor substrate and locally heating the semiconductor substrate by using a heated tip structure. Locally heating the semiconductor substrate is carried out to locally modify the electrical properties of the semiconductor substrate. The semiconductor substrate can be implanted with dopants, so that locally heating step causes a local activation of the implanted dopants. Furthermore, the semiconductor substrate can be provided with a dopant layer, so that locally heating step causes dopants to diffuse into the semiconductor substrate.

High-Speed Scanning Probe Microscope

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US Patent:
20110289636, Nov 24, 2011
Filed:
Jan 15, 2010
Appl. No.:
13/146355
Inventors:
Harish Bhaskaran - New Haven CT, US
Michel Despont - Rueschlikon, CH
Abu Sebastian - Rueschlikon, CH
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
G01Q 60/14
US Classification:
850 28
Abstract:
The invention is directed to a probe for scanning probe microscopy. The probe comprises a tunnel-current conducting part and a tunnel-current insulating part The said parts are configured such that the insulating part determines a minimal distance between the conducting part and the sample surface. The invention may further concern a scanning probe microscope having such a probe, and a corresponding scanning probe microscopy method. Since the distance to the sample surface is actually determined by the insulating part controlling the vertical position of the probe relative to the sample surface is easily and rapidly achieved. The configuration of the parts allows for a fast scan of the sample surface, whereby high-speed imaging can be achieved. Further, embodiments allow for topographical variations to be accurately captured through tunneling effect.
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Harish Bhaskaran from Baltimore, MD, age ~45 Get Report