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Haim Ben Hamou

from Beaverton, OR
Age ~69
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Also known as:
Haim B Hamou, Haim Ben Benhamou, Ben Haim Hamou, Ben Danielle Hamou, Ben Noam Hamou, Haim Ben-Hamou, Hamou Haim Ben, Haim Ben
Connected to:
Daniel A Hamou, 40Gehan D Hamouda, 53Hawra H Hamoud, 33Mohamed A Hamoud, 40Nadia F Hamouda, 62Waleed I Hamouda, 61Yasser Hamouda, 51Haider S Hamoudi, 29Mohammed A Hamoudi, 31Mike Hamoui

Haim Hamou Phones & Addresses

  • Beaverton, OR
  • Rye, NH
  • Portland, ME
  • Portland, OR
  • Bridgewater, NJ
  • Somerset, NJ
  • South Plainfield, NJ

Publications

Us Patents

Baw Resonator Bi-Layer Top Electrode With Zero Etch Undercut

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US Patent:
7737612, Jun 15, 2010
Filed:
Apr 1, 2008
Appl. No.:
12/080348
Inventors:
Haim Ben Hamou - Portland OR, US
Ralph N. Wall - Beaverton OR, US
Guillaume Bouche - Portland OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H01L 41/08
H01L 41/047
US Classification:
310363, 310320
Abstract:
A piezoelectric resonator includes a multi-layer top electrode configured such that a top most layer protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top-most layer. In one embodiment, the multi-layer top electrode is configured as a bi-layer, so that the upper layer of the bi-layer stack protects all sides of the underlying layer from subsequent etch process steps. In an alternative embodiment, at least the perimeter of a multi-layer top electrode is completely covered with overlapping interconnect metal.

Process Of Making A Baw Resonator Bi-Layer Top Electrode

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US Patent:
8201311, Jun 19, 2012
Filed:
Aug 6, 2008
Appl. No.:
12/221907
Inventors:
Haim Ben Hamou - Portland OR, US
Ralph N. Wall - Beaverton OR, US
Guillaume Bouche - Portland OR, US
Assignee:
TriQuint Semiconductor, Inc. - Hillsboro OR
International Classification:
H04R 17/10
H04R 31/00
US Classification:
29 2535, 29594, 29847, 438 3, 333219
Abstract:
A piezoelectric layer is coupled to a bottom electrode in a method of fabricating a piezoelectric resonator. A bottom metal layer of a top electrode is deposited on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and etched. An interconnect metal layer is deposited on the etched top metal layer and the piezoelectric layer such that the interconnect metal layer isolates the bottom metal layer from subsequent etch steps.

Baw Resonator Bi-Layer Top Electrode With Zero Etch Undercut

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US Patent:
7600303, Oct 13, 2009
Filed:
May 25, 2006
Appl. No.:
11/442375
Inventors:
Haim Ben Hamou - Portland OR, US
Ralph N. Wall - Beaverton OR, US
Guillaume Bouche - Portland OR, US
Assignee:
Maxim Integrated Products, Inc. - Sunnyvale CA
International Classification:
H04R 17/00
C23F 1/00
US Classification:
29 2535, 29594, 29847, 310364, 310365, 216 13
Abstract:
A method of fabricating a BAW piezoelectric resonator, the method comprising the steps of providing a bottom electrode and a piezoelectric layer coupled to the bottom electrode. A bottom metal layer is deposited on a top electrode on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and layered such that the top metal layer completely covers the top and sides of the bottom metal layer.
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Haim Ben Hamou from Beaverton, OR, age ~69 Get Report