Inventors:
Steven J. Adler - Saratoga CA, US
Peter Johnson - Sunnyvale CA, US
Gokhan Percin - Los Gatos CA, US
Shahram Mostafazadeh - San Jose CA, US
Assignee:
National Semiconductor Corporated - Santa Clara CA
International Classification:
H01L 29/72
US Classification:
438 50, 438 48, 257416, 310322, 600437
Abstract:
A method for forming a capacitive micromachined ultrasonic transducer (CMUT) includes forming multiple CMUT elements in a first semiconductor-on-insulator (SOI) structure. Each CMUT element includes multiple CMUT cells. The first SOI structure includes a first handle wafer, a first buried layer, and a first active layer. The method also includes forming a membrane over the CMUT elements and forming electrical contacts through the first handle wafer and the first buried layer. The electrical contacts are in electrical connection with the CMUT elements. The membrane could be formed by bonding a second SOI structure to the first SOI structure, where the second SOI structure includes a second handle wafer, a second buried layer, and a second active layer. The second handle wafer and the second buried layer can be removed, and the membrane includes the second active layer.