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Gleb E Shtengel

from Ashburn, VA
Age ~55

Gleb Shtengel Phones & Addresses

  • 20567 Coppersmith Dr, Ashburn, VA 20147 (908) 604-1027
  • Leesburg, VA
  • Basking Ridge, NJ
  • 1371 Springfield Ave, New Providence, NJ 07974
  • 1900 Thames St, Baltimore, MD 21231
  • Berkeley Heights, NJ
  • Emmaus, PA
  • 20567 Coppersmith Dr, Ashburn, VA 20147

Publications

Us Patents

Ina1As Etch Stop Layer For Precise Semiconductor Waveguide Fabrication

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US Patent:
6376272, Apr 23, 2002
Filed:
Jun 6, 2000
Appl. No.:
09/588427
Inventors:
Aaron Eugene Bond - Macungie PA
Abdallah Ougazzaden - Emmaus PA
Gleb E. Shtengel - Baltimore MD
Assignee:
Lucent Technologies, Inc. - Murray Hill NJ
International Classification:
H01L 2100
US Classification:
438 31, 372 45, 385130
Abstract:
A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH /H etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.

Method And Device For Preventing Zinc/Iron Interaction In A Semiconductor Laser

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US Patent:
6556605, Apr 29, 2003
Filed:
Feb 29, 2000
Appl. No.:
09/515102
Inventors:
Gleb E. Shtengel - Hanover MD
Utpal Kumar Chakrabarti - Breinigsville PA
Charles William Lentz - Breinigsville PA
Charles H. Joyner - Holmdel NJ
Abdallah Ougazzaden - Breinigsville PA
Assignee:
Triquent Technology Holding, Co. - Hillsboro OR
International Classification:
H01S 500
US Classification:
372 46
Abstract:
A mesa stripe buried heterostructure semiconductor laser with no intediffusion of atoms between doped regions and a method of its formation are disclosed. A double dielectric mask is used to form the mesa stripe. The first mask is then partially etched and a Si-doped InP layer is selectively grown. The first and second mask are subsequently etched away and an InP(Zn) clad layer, along with a Zn-doped InGaAs contact layer, are formed. This way, the resulting structure has no contact between the InP(Zn) clad layer and the InP(Fe) layer, and the dopant atoms interdiffusion is suppressed.

Automatic Dc Bias Control For The Duobinary Modulation Format Utilizing A Low-Pass Electrical Filter

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US Patent:
7034977, Apr 25, 2006
Filed:
Feb 9, 2004
Appl. No.:
10/775054
Inventors:
Roey Harel - New Providence NJ, US
Dean Pappas - Hamilton Square NJ, US
Gleb Shtengel - Basking Ridge NJ, US
Jason B. Stark - Holmdel NJ, US
Donald V. Le Roy - Doylestown PA, US
Assignee:
Kodeos Communications - South Plainfield NJ
International Classification:
G02F 1/01
G02B 26/00
US Classification:
359239
Abstract:
A method and apparatus is provided for controlling the bias point of a Mach-Zehnder modulator. The method begins by applying a dither signal to a DC bias that is applied to a Mach-Zehnder modulator. A component of an optical output signal provided by the Mach-Zehnder modulator that is synchronous with the dither signal is detected. The dither signal is adjusted to maintain the detected component of the optical output signal at a substantially constant value.

Three-Dimensional Interferometric Microscopy

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US Patent:
7924432, Apr 12, 2011
Filed:
Sep 10, 2009
Appl. No.:
12/556707
Inventors:
Harald F. Hess - Leesburg VA, US
Gleb Shtengel - Ashburn VA, US
Assignee:
Howard Hughes Medical Institute - Chevy Chase MD
International Classification:
G01B 11/02
G02B 21/00
US Classification:
356496, 359370
Abstract:
A statistically sparse subset of switchable optical sources in a sample is activated, and the activated switchable optical sources are excited such that optical beams are emitted from the activated switchable optical sources along at least two optical paths. A first wavefront modification in a first optical beam emitted from the activated switchable optical sources along a first optical path is introduced and a second wavefront modification in a second optical beam emitted from the activated switchable optical sources along a second optical path is introduced, the second wavefront modification being distinct from the first wavefront modification. The first and second optical beams are interfered with each other to produce a plurality of output beams, and three-dimensional position information of the optical sources is determined based on an intensity of each output beam from the plurality of output beams.

Reducing Optical Loss In Semiconductor Opto-Electronic Devices By Hydrogen Passivation Of Dopants

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US Patent:
20030026576, Feb 6, 2003
Filed:
Aug 6, 2001
Appl. No.:
09/922891
Inventors:
Waleed Asous - Allentown PA, US
Aaron Bond - Allentown PA, US
Robert Hartman - Warren Township NJ, US
Padman Parayanthal - Clinton Township NJ, US
George Przybylek - Douglasville PA, US
Gleb Shtengel - New Providence NJ, US
International Classification:
G02B006/10
H01L021/04
US Classification:
385/131000, 385/142000, 438/510000
Abstract:
A method for reducing optical loss in opto-electronic devices includes passivating P-type dopant impurities formed within various cladding and contact layer films. The passivating species is atomic hydrogen produced by a hydrogen containing plasma. The atomic hydrogen complexes with P-type dopant impurities to form electrically neutral pairs which are void of free carriers. Absorption, and loss, of the optical wave is therefore suppressed as it propagates through the P-doped layers because of the reduced free carrier concentration in the P-doped layers.
Gleb E Shtengel from Ashburn, VA, age ~55 Get Report