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Gershon Varda Perelman

from Cupertino, CA
Age ~71

Gershon Perelman Phones & Addresses

  • Cupertino, CA
  • San Jose, CA
  • Sunnyvale, CA
  • Santa Clara, CA

Work

Company: Lumenis Position: Mech engineer manager at lumenis

Education

School / High School: Ben - Gurion University of the Negev 1972 to 1984

Skills

Engineering • Medical Devices

Industries

Medical Devices

Resumes

Resumes

Gershon Perelman Photo 1

Mech Engineer Manager At Lumenis

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Location:
Berkeley, CA
Industry:
Medical Devices
Work:
Lumenis
Mech Engineer Manager at Lumenis
Education:
Ben - Gurion University of the Negev 1972 - 1984
Skills:
Engineering
Medical Devices

Business Records

Name / Title
Company / Classification
Phones & Addresses
Gershon Perelman
President
PER TECH INTERNATIONAL, INC
Business Services at Non-Commercial Site
1554 Primrose Way, Cupertino, CA 95014
Gershon Perelman
President
STERAY, INC
401 Nelo St, Santa Clara, CA 95054

Publications

Us Patents

Optical Fiber Bragg Grating Tuning Device

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US Patent:
6785443, Aug 31, 2004
Filed:
Jan 30, 2002
Appl. No.:
10/062577
Inventors:
Alexis Mendez - Fremont CA
Mario Pacheco - Fremont CA
Steve Montesanto - Palo Alto CA
Gershon Perelman - Cupertino CA
William Wang - Pleasanton CA
Jason Zweiback - Fremont CA
Assignee:
Teraxion Inc. - Sainte-Foy
International Classification:
G02B 634
US Classification:
385 37, 385 12, 385 13, 385 31, 385136, 385137
Abstract:
The present invention is directed to a system and method for tuning an optical fiber Bragg grating by using a circular mechanism which uniformly stretches the fiber along its length while at the same time preserving the minimal size for stretching.

High Throughput Brightfield/Darkfield Wafer Inspection System Using Advanced Optical Techniques

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US Patent:
6816249, Nov 9, 2004
Filed:
Jul 17, 2001
Appl. No.:
09/907295
Inventors:
Christopher R Fairley - San Jose CA
Tao-Yi Fu - Fremont CA
Gershon Perelman - Cupertino CA
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
G01N 2100
US Classification:
3562371, 3562391, 356394
Abstract:
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

Deployable Fast-Response Apparatus To Recover Bio-Contaminated Materials

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US Patent:
6928143, Aug 9, 2005
Filed:
Apr 21, 2003
Appl. No.:
10/418921
Inventors:
John Edgar Menear - Santa Cruz CA, US
Sergey Etchin - Cupertino CA, US
Gershon Perelman - Cupertino CA, US
Jeffrey Allen Moore - Redwood City CA, US
International Classification:
G21K005/00
G21K005/10
US Classification:
378 69, 378 64, 378 68, 378198, 25045311, 25045411, 25045511, 2504921
Abstract:
A portable apparatus for sanitizing and recovering mail and other materials is disclosed. The apparatus is employed after a known or suspected biological attack or contamination event, such as anthrax. Multiple X-ray sources penetrate mail and other materials, and destroy the biological agents. The apparatus is taken to the location of the biological problem, as opposed to shipping contaminated materials to a fixed facility for recovery. Many safety and practical advantages result from this approach to bio-terrorism or to biological contamination events. The design of this apparatus leads to a self-cleaning feature. Airflow control prevents escape of toxic biological materials into the environment.

Temperature Compensated Time-Of-Flight Mass Spectrometer

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US Patent:
6998607, Feb 14, 2006
Filed:
Aug 31, 2004
Appl. No.:
10/931809
Inventors:
Stephen C. Davis - Ascot, AU
Lee Earley - Mountain View CA, US
Mark Hardman - Sunnyvale CA, US
Adrian Land - San Carlos CA, US
Gershon Perelman - Cupertino CA, US
Assignee:
Thermo Finnigan LLC - San Jose CA
International Classification:
H01J 49/40
US Classification:
250287
Abstract:
An apparatus that comprises material which have different thermal expansion coefficients, combined in such a way that the length of the drift region is variant, and self adjusting with temperature. The adjustment is such as to compensate for the length changes resulting from thermal expansion or contraction in other ion optical elements, such that ions of substantially equivalent mass to charge ratios maintain a constant flight time though the system. This allows for use of standard construction methods for the ion optical elements.

High Throughput Brightfield/Darkfield Wafer Inspection System Using Advanced Optical Techniques

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US Patent:
7164475, Jan 16, 2007
Filed:
Nov 4, 2004
Appl. No.:
10/983078
Inventors:
Christopher R Fairley - San Jose CA, US
Tao-Yi Fu - Fremont CA, US
Gershon Perelman - Cupertino CA, US
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562391, 359196
Abstract:
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

High Throughput Darkfield/Brightfield Wafer Inspection System Using Advanced Optical Techniques

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US Patent:
7259844, Aug 21, 2007
Filed:
Jan 12, 2007
Appl. No.:
11/652781
Inventors:
Christopher R. Fairley - San Jose CA, US
Tao-Yi Fu - Fremont CA, US
Gershon Perelman - Cupertino CA, US
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562391, 356369, 250225
Abstract:
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

High Throughput Brightfield/Darkfield Wafer Inspection System Using Advanced Optical Techniques

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US Patent:
7379173, May 27, 2008
Filed:
Jul 9, 2004
Appl. No.:
10/887786
Inventors:
Christopher R Fairley - San Jose CA, US
Tao-Yi Fu - Fremont CA, US
Gershon Perelman - Cupertino CA, US
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
G01N 21/00
US Classification:
3562374, 3562375
Abstract:
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control.

High Throughput Darkfield/Brightfield Wafer Inspection System Using Advanced Optical Techniques

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US Patent:
7522275, Apr 21, 2009
Filed:
Aug 14, 2007
Appl. No.:
11/893169
Inventors:
Christopher R. Fairley - San Jose CA, US
Tao-Yi Fu - Fremont CA, US
Gershon Perelman - Cupertino CA, US
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562391
Abstract:
The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.
Gershon Varda Perelman from Cupertino, CA, age ~71 Get Report