US Patent:
20060084248, Apr 20, 2006
Inventors:
Pushkar Ranade - Hillsboro OR, US
Aaron Lilak - Hillsboro OR, US
Sanjay Natarajan - Portland OR, US
Gerard Zietz - Banks OR, US
Jose Maiz - Portland OR, US
International Classification:
H01L 21/265
Abstract:
Methods of forming a microelectronic structure are described. Those methods comprise implanting a first concentration of a species into an active area with a first energy, wherein the species pre-damages a portion of the active area, and then implanting a second concentration of the species into the active area with a second energy, wherein the total concentration of the species does not substantially penetrate an underlying channel region.