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Gerard T Zietz

from Banks, OR
Age ~71
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Also known as:
Gerard Thomas Zietz, Jerry Thomas Zietz, Jerry T Zietz, Gerald T Zietz, Gererd T Zietz, Gerard Zeitz, Jerry T Zeitz
Phone and address:
46080 Levi White Rd, Banks, OR 97106
(503) 789-6419
Related to:
Pam S Hartman, 71Dorothy T Zietz, 72Mathea Zietz, 46Kelly T Zietz, 39A ZietzLisa Zeitz, 49
Connected to:
David Zietz, 54Jonathan D Zietz, 41Larry E Zietz, 74Laura N Zietz, 34Mike Zietz, 42Patrick M Zietz, 49Rebecca Zietz, 42Sylvia Zietze, 55Jon C Zieve, 66Barbara L Zieverink, 58

Gerard Zietz Phones & Addresses

  • 46080 Levi White Rd, Banks, OR 97106 (503) 789-6419
  • Tillamook, OR
  • Salt Lake City, UT

Publications

Us Patents

Stabilization Of Resist Material Through Ion Implantation

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US Patent:
20030222345, Dec 4, 2003
Filed:
May 30, 2002
Appl. No.:
10/158980
Inventors:
Christopher Kenyon - Portland OR, US
Michael Fahy - Portland OR, US
Gerard Zietz - Banks OR, US
International Classification:
H01L023/48
US Classification:
257/751000
Abstract:
A resist material used to mask an underlying layer during an etch process is subjected to ion implantation to harden the resist material against damage from the etch process. In a particular embodiment, the resist material is compatible with exposure to 193 nm radiation for patterning the resist material.

Methods Of Optimization Of Implant Conditions To Minimize Channeling And Structures Formed Thereby

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US Patent:
20060084248, Apr 20, 2006
Filed:
Oct 15, 2004
Appl. No.:
10/966200
Inventors:
Pushkar Ranade - Hillsboro OR, US
Aaron Lilak - Hillsboro OR, US
Sanjay Natarajan - Portland OR, US
Gerard Zietz - Banks OR, US
Jose Maiz - Portland OR, US
International Classification:
H01L 21/265
US Classification:
438520000
Abstract:
Methods of forming a microelectronic structure are described. Those methods comprise implanting a first concentration of a species into an active area with a first energy, wherein the species pre-damages a portion of the active area, and then implanting a second concentration of the species into the active area with a second energy, wherein the total concentration of the species does not substantially penetrate an underlying channel region.

Methods Of Optimization Of Implant Conditions To Minimize Channeling And Structures Formed Thereby

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US Patent:
20060202267, Sep 14, 2006
Filed:
May 5, 2006
Appl. No.:
11/418593
Inventors:
Pushkar Ranade - Hillsboro OR, US
Aaron Lilak - Hillsboro OR, US
Sanjay Natarajan - Portland OR, US
Gerard Zietz - Banks OR, US
Jose Maiz - Portland OR, US
International Classification:
H01L 29/76
US Classification:
257344000, 257E21412
Abstract:
Methods of forming a microelectronic structure are described. Those methods comprise implanting a first concentration of a species into an active area with a first energy, wherein the species pre-damages a portion of the active area, and then implanting a second concentration of the species into the active area with a second energy, wherein the total concentration of the species does not substantially penetrate an underlying channel region.
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Gerard T Zietz from Banks, OR, age ~71 Get Report