Inventors:
Larry Dean Partain - Los Altos CA, US
George Zentai - Mountain View CA, US
Assignee:
Varian Medical Systems, Inc. - Palo Alto CA
International Classification:
H01L 27/146
US Classification:
257443, 257 72, 257428, 257431, 257444, 257448, 257E31086, 257E31092, 25037009
Abstract:
A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.