Inventors:
Hassan Pirastehfar - Mesa AZ
George C. Onodera - Phoenix AZ
Waisiu Law - Phoenix AZ
David M. Heminger - Mesa AZ
Assignee:
Motorola Inc. - Schaumburg IL
International Classification:
H01L 2714
Abstract:
An improved photo detector is provided by forming a tub of monocrystalline semiconductor material surrounded by a layer of monocrystalline material of opposite conductivity type. The improved structure is manufactured by means of a modified DIC process. The device may by made deep enough to absorb a large portion of the incident radiation near the PN junction without sacrificing a large number of photo-generated carriers to recombination.