Resumes
Resumes
Fred Ju Phones & Addresses
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2445 Vista Nobleza, Newport Beach, CA 92660 (949) 759-8317
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Huntington Beach, CA
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2610 Alton Ave, Santa Ana, CA 92704
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8102 16Th St, Westminster, CA 92683
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Mission Viejo, CA
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Los Angeles, CA
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East Irvine, CA
Publications
Us Patents
Hgcdte Epitaxially Grown On Crystalline Support
View pageUS Patent:
46558489, Apr 7, 1987
Filed:
Aug 26, 1985
Appl. No.:
6/769816
Inventors:
Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Assignee:
Ford Aerospace & Communications Corporation - Detroit MI
International Classification:
H01L 2138
H01L 2136
H01L 2136
US Classification:
148 15
Abstract:
A layer of HgCdTe (15) epitaxially grown onto a crystalline support (10), e. g. , of sapphire of GaAs. A CdTe substrate (5) is epitaxially grown to a thickness of between 1 micron and 5 microns on the support (10). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500. degree. C. and 625. degree. C. for a growth step having a duration of between 5 minutes and 4 hours. Then an interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400. degree. C. and 500. degree. C. for a time of between 1 hour and 16 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal.
Hgcdte Epitaxially Grown On Crystalline Support
View pageUS Patent:
47433108, May 10, 1988
Filed:
Feb 2, 1987
Appl. No.:
7/010028
Inventors:
Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Assignee:
Ford Aerospace & Communications Corporation - Detroit MI
International Classification:
H01L 21363
US Classification:
148 33
Abstract:
A layer of HgCdTe (15) is epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500. degree. C. and 625. degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are non-isothermal. In a second growth step embodiment, the source (3) and substrate (5) are isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400. degree. C. and 500. degree. C. for a time of between 1 hour and 16 hours.
Non Isothermal Method For Epitaxially Growing Hgcdte
View pageUS Patent:
46489177, Mar 10, 1987
Filed:
Aug 26, 1985
Appl. No.:
6/769909
Inventors:
Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Assignee:
Ford Aerospace & Communications Corporation - Detroit MI
International Classification:
H01L 21365
US Classification:
148175
Abstract:
A layer of HgCdTe (15) is epitaxially grown onto a CdTe substrate (5). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated within a temperature range of between 500. degree. C. and 625. degree. C. for a processing step having a duration of between 5 minutes and 4 hours. During at least 5 minutes of this processing step, the substrate (5) is made to have a greater temperature than the source (3). Preferably the substrate (5) is never at a lower temperature than the source (3). The source (3) and substrate (5) are heated together in a thermally insulating, reusable ampoule (17). The CdTe substrate (5) is preferably a thin film epitaxially grown on a support (10) e. g. , of sapphire or GaAs. When support (10) is not used, the CdTe substrate (5) is polished; and sublimation and solid state diffusion growth mechanisms are present in the growth of the HgCdTe (15).
Hccdte Epitaxially Grown On Crystalline Support
View pageUS Patent:
48469262, Jul 11, 1989
Filed:
Sep 3, 1987
Appl. No.:
7/092858
Inventors:
Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA
Assignee:
Ford Aerospace & Communications Corporation - Newport Beach CA
International Classification:
C30B 2302
US Classification:
156612
Abstract:
A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500. degree. C. and 625. degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400. degree. C. and 500. degree. C. for a time of between 1 hour and 16 hours.