US Patent:
20070218639, Sep 20, 2007
Inventors:
Fransiska Dwikusuma - Portland OR, US
International Classification:
H01L 21/336
Abstract:
Embodiments of the invention provide a polysilicon layer on a high-k dielectric layer with a smooth upper surface. The polysilicon layer may be formed by pretreating a wafer with a substrate, the high-k dielectric layer on the substrate and a capping layer on the high-k dielectric layer at a first temperature in a chemical vapor deposition chamber. The polysilicon layer may then be formed on the capping layer in the chemical vapor deposition chamber at a second temperature higher than the first temperature.