Inventors:
Frank Huebinger - Poughkeepsie NY, US
Richard Lindsay - Beacon NY, US
Assignee:
Infineon Technologies AG - Neubiberg
International Classification:
H01L 29/76
H01L 29/94
H01L 31/062
H01L 31/113
H01L 31/119
H01L 27/10
H01L 27/12
H01L 31/0392
H01L 23/62
US Classification:
257369, 257331, 257338, 257341, 257342, 257350, 257351, 257357, 257358, 257359, 257371, 257401, 257E21623, 257E21637, 257E21553
Abstract:
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a first active area, and a second transistor having a second active area. A top surface of the first active area is elevated or recessed with respect to a top surface of the second active area, or a top surface of the first active area is elevated or recessed with respect to a top surface of at least portions of an isolation region proximate the first transistor.