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Eric M Gitlin

from Saint Peters, MO
Age ~59
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Also known as:
Eric Gittlin, Eric G
Phone and address:
23 Creekside Dr, Saint Peters, MO 63376
(636) 397-2887
Related to:
Beverly J Jipp, 80Steven R Gitlin, 60Martin L Jipp, 52Holly Gitlin, 50Steve GitlinRonald S Gitlin, 77J GitlinRoberta J Gitlin, 53Lester Jipp Martin, 52Robert GitlinSteven R Gitlin, 61Robert O Jipp, 79Julia M Gitlin, 80
Connected to:
Aaron L Gitlin, 39Debbie Gitlin, 67Denise T Gitlin, 63Dennis M Gitlin, 39Jill A Gitlin, 63Joan C Gitlin, 74Joshua Gitlin, 46Julie W Gitlin, 65Marcy H Gitlin, 64Max Gitlin, 91

Eric Gitlin Phones & Addresses

  • 23 Creekside Dr, Saint Peters, MO 63376 (636) 397-2887
  • O Fallon, MO
  • Elsberry, MO
  • Saint Charles, MO
  • Saint Louis, MO

Skills

Outdoor Advertising • Interactive Advertising • Digital Marketing • Magazines • Radio • Media Planning • Media Buying • SEM • Broadcast Television • Cable Television • Newspaper • Advertising

Industries

Marketing and Advertising

Resumes

Resumes

Eric Gitlin Photo 1

Vp, Associate Media Director At Tinsley Advertising

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Location:
Miami, Florida
Industry:
Marketing and Advertising
Skills:
Outdoor Advertising
Interactive Advertising
Digital Marketing
Magazines
Radio
Media Planning
Media Buying
SEM
Broadcast Television
Cable Television
Newspaper
Advertising

Publications

Us Patents

Methods For Forming Single Crystal Silicon Ingots With Improved Resistivity Control

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US Patent:
20210071315, Mar 11, 2021
Filed:
Oct 15, 2020
Appl. No.:
17/071714
Inventors:
- Hsinchu, TW
Parthiv Daggolu - Creve Coeur MO, US
Eric Gitlin - St. Peters MO, US
Robert Standley - Chesterfield MO, US
HyungMin Lee - Chungcheongnam-do, KR
Nan Zhang - O'Fallon MO, US
Jae-Woo Ryu - Chesterfield MO, US
Soubir Basak - Chandler AZ, US
International Classification:
C30B 15/20
C30B 15/04
C30B 29/06
Abstract:
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Methods For Forming Single Crystal Silicon Ingots With Improved Resistivity Control

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US Patent:
20180179660, Jun 28, 2018
Filed:
Dec 27, 2017
Appl. No.:
15/855466
Inventors:
- Singapore, SG
Parthiv Daggolu - Creve Coeur MO, US
Eric Gitlin - St. Peters MO, US
Robert Standley - Chesterfield MO, US
HyungMin Lee - Chungcheongnam-do, KR
Nan Zhang - O'Fallon MO, US
Jae-Woo Ryu - Chesterfield MO, US
Soubir Basak - Chandler AZ, US
International Classification:
C30B 15/20
C30B 29/06
C30B 15/04
Abstract:
Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Crystal Pulling Systems And Methods For Producing Monocrystalline Ingots With Reduced Edge Band Defects

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US Patent:
20170107639, Apr 20, 2017
Filed:
Oct 19, 2016
Appl. No.:
15/297853
Inventors:
- Singapore, SG
Gaurab Samanta - Brentwood MO, US
Parthiv Daggolu - Creve Coeur MO, US
Benjamin Michael Meyer - Defiance MO, US
William L. Luter - St. Charles MO, US
Jae Woo Ryu - Chesterfield MO, US
Eric Michael Gitlin - St. Peters MO, US
International Classification:
C30B 15/20
C30B 29/06
C30B 15/22
Abstract:
A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.
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Eric M Gitlin from Saint Peters, MO, age ~59 Get Report