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Edward Kevin Hutchins

from Durham, NC
Age ~65

Edward Hutchins Phones & Addresses

  • 3805 Valleydale Dr, Durham, NC 27703 (919) 596-6904
  • 717 Pleasant Dr, Durham, NC 27703 (919) 596-3321
  • 715 Pleasant Dr, Durham, NC 27703
  • New Bern, NC

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: High school graduate or higher

Specialities

Accountants Malpractice • Appellate Practice • Attorney Discipline • Defense of Local Governments • Design Professionals Malpractice • Insurance Agents and Brokers Errors and Omissions • Insurance Coverage • Insurance Defense Law • Legal Malpractice • Litigation Law • Professional Malpractice Law • Real Estate Errors and Omissions • Medical Malpractice • Real Estate Title Insurance Law • regulatory law

Professional Records

License Records

Edward J Hutchins

License #:
13989 - Expired
Issued Date:
Mar 10, 1992
Expiration Date:
Jul 31, 1995
Type:
Master Electrician

Lawyers & Attorneys

Edward Hutchins Photo 1

Edward Hutchins - Lawyer

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Office:
Eccleston and Wolf A Professional Corporation
Specialties:
Accountants Malpractice
Appellate Practice
Attorney Discipline
Defense of Local Governments
Design Professionals Malpractice
Insurance Agents and Brokers Errors and Omissions
Insurance Coverage
Insurance Defense Law
Legal Malpractice
Litigation Law
Professional Malpractice Law
Real Estate Errors and Omissions
Medical Malpractice
Real Estate Title Insurance Law
regulatory law
ISLN:
906281923
Admitted:
1982
University:
University of Maryland, B.A., 1979; University of Maryland, B.A., 1979
Law School:
University of Maryland, J.D., 1982; University of Maryland, J.D., 1982

Resumes

Resumes

Edward Hutchins Photo 2

Edward Hutchins

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Edward Hutchins Photo 3

Edward Hutchins

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Edward Hutchins Photo 4

Product Engineering Manager, Materials At Cree

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Location:
Raleigh-Durham, North Carolina Area
Industry:
Semiconductors

Publications

Us Patents

Highly Uniform Group Iii Nitride Epitaxial Layers On 100 Millimeter Diameter Silicon Carbide Substrates

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US Patent:
7405430, Jul 29, 2008
Filed:
Jun 10, 2005
Appl. No.:
11/149664
Inventors:
Adam William Saxler - Durham NC, US
Edward Lloyd Hutchins - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 29/15
US Classification:
257 77, 257183, 257190, 257E29081, 257E29104
Abstract:
A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than three percent; a standard deviation in electron mobility across the wafer of less than 1 percent; a standard deviation in carrier density across the wafer of no more than about 3. 3 percent; and a standard deviation in conductivity across the wafer of about 2. 5 percent.

Laser Diode Backlighting Of Lc Display With At Least One Diode Generating Light Beam Having Divergence Angle And With Display Panel Having Beam Spreader To Increase Divergence

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US Patent:
7508466, Mar 24, 2009
Filed:
Nov 14, 2005
Appl. No.:
11/273431
Inventors:
Edward Lloyd Hutchins - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
G02F 1/1335
US Classification:
349 61
Abstract:
An LCD display includes a planar array of transmissive liquid crystal display (LCD) devices, and at least one laser diode device spaced apart from the planar array of LCD devices and configured to illuminate at least a subset of the LCD devices of the planar array of LCD devices such that, in operation, the laser diode device provides backlighting for the subset of LCD devices of the planar array of LCD devices.

Highly Uniform Group Iii Nitride Epitaxial Layers On 100 Millimeter Diameter Silicon Carbide Substrates

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US Patent:
7662682, Feb 16, 2010
Filed:
May 12, 2008
Appl. No.:
12/118947
Inventors:
Adam William Saxler - Durham NC, US
Edward Lloyd Hutchins - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 21/338
US Classification:
438172, 257E29246, 257E29249, 257E21403, 257E21407
Abstract:
A method for epitaxial growth of Group III nitrides on a substrate using source gases consistent with metal organic chemical vapor deposition is provided. A heterostructure formed from two Group III nitride epitaxial layers is grown on a substrate in an atmosphere containing minimal hydrogen. The two Group III nitride epitaxial layers differ sufficiently in composition from one another in order to generate a two-dimensional electron gas at their interface. The substrate upon which the heterostructure is grown has a diameter of at least 100 mm.

Multi-Element Led Lamp Package

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US Patent:
7829899, Nov 9, 2010
Filed:
May 3, 2006
Appl. No.:
11/416804
Inventors:
Edward Lloyd Hutchins - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 29/26
US Classification:
257 79, 257 89, 257 94, 257 96, 257 98, 257E2502
Abstract:
In one embodiment, a single light emitting diode lamp package includes at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. In another embodiment, a LED device includes a first LED die and at least one additional LED die disposed at different positions within a common reflector cup. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Multi-Element Led Lamp Package

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US Patent:
8324635, Dec 4, 2012
Filed:
Sep 30, 2010
Appl. No.:
12/895108
Inventors:
Edward Lloyd Hutchins - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 29/15
US Classification:
257 79, 257 89, 257 94, 257 96, 257 98, 257E2502
Abstract:
In one embodiment, a single light emitting diode lamp package includes at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. In another embodiment, a LED device includes a first LED die and at least one additional LED die disposed at different positions within a common reflector cup. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Multi-Element Led Lamp Package

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US Patent:
8629459, Jan 14, 2014
Filed:
Nov 12, 2012
Appl. No.:
13/674937
Inventors:
Edward Lloyd Hutchins - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 27/15
US Classification:
257 79, 257 89, 257 94, 257 96, 257 98, 257E2502
Abstract:
A light emitting diode device (e. g. , LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.

Electronic And/Or Optoelectronic Devices Grown On Free-Standing Gan Substrates With Gan Spacer Structures

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US Patent:
20060289891, Dec 28, 2006
Filed:
Jun 28, 2005
Appl. No.:
11/168501
Inventors:
Edward Hutchins - Raleigh NC, US
International Classification:
H01L 33/00
US Classification:
257103000
Abstract:
A GaN-based electronic and/or optoelectronic device formed on a free-standing GaN substrate, wherein a thick GaN spacer layer is provided between the device and the substrate, thereby separating the active region of the electronic and/or optoelectronic device from high impurity content at the substrate-epitaxial interface and reducing the detrimental impact of such interfacial impurity on the performance of the electronic and/or optoelectronic device. The GaN spacer layer has a thickness of at least about 0.5 microns, and preferably from about 0.5 micron to about 2 microns.

Multi-Element Led Lamp

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US Patent:
20140104865, Apr 17, 2014
Filed:
Dec 20, 2013
Appl. No.:
14/136846
Inventors:
- Durham NC, US
Edward Lloyd Hutchins - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
F21S 8/10
F21K 99/00
F21V 7/04
US Classification:
362516, 362308, 362294, 362 84, 362235
Abstract:
A light emitting diode device (e.g., LED package) may include at least two light emitting devices that can be switched independently of one another and thus may be useful in vehicular lighting applications, for example low and high beam headlights. A LED device may include a first LED die and at least one additional LED die disposed at different positions within a common reflector cup or relative to a common lens. Multiple LED sub-assemblies may be mounted to a common lead frame along non-coincident principal axes. Methods for varying intensity or color from multi-LED lamps are further provided.
Edward Kevin Hutchins from Durham, NC, age ~65 Get Report