Inventors:
Franz Kreupl - München, DE
Abhijit Bandyopadhyay - San Jose CA, US
Yung-Tin Chen - Santa Clara CA, US
Chu-Chen Fu - San Ramon CA, US
Wipul Pemsiri Jayasekara - Los Gatos CA, US
James Kai - Santa Clara CA, US
Raghuveer S. Makala - Sunnyvale CA, US
Peter Rabkin - Cupertino CA, US
George Samachisa - San Jose CA, US
Jingyan Zhang - Santa Clara CA, US
Assignee:
SanDisk 3D LLC - Milpitas CA
International Classification:
G11C 11/00
Abstract:
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.