Christopher P Hatem

7642150, Jan 5, 2010

Apr 10, 2007

11/733467

Edwin A. Arevalo - Haverhill MA, US
Christopher R. Hatem - Cambridge MA, US
Anthony Renau - West Newbury MA, US
Jonathan Gerald England - Horsham, GB

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/425
G21K 5/10

438215, 438514, 25049221

Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (GeH), germanium nitride (GeN), germanium-fluorine compounds (GF, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

7655932, Feb 2, 2010

Jul 11, 2007

11/776217

Christopher R. Hatem - Cambridge MA, US
Craig R. Chaney - Rockport MA, US
Eric R. Cobb - Danvers MA, US
Joseph C. Olson - Beverly MA, US
Chris Campbell - Newburyport MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 49/10
H01J 27/02

25049221, 250423 R, 250424, 250425, 250426, 315111011, 315111, 315 21, 700121

Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.

7807961, Oct 5, 2010

Oct 8, 2008

12/247544

Christopher R. Hatem - Salisbury MA, US
Christopher A. Rowland - Rockport MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/317
H01J 37/08
H01L 21/265

250251, 25049221, 250423 R, 250424, 2504922, 2504923, 118723 FI, 31511181, 438514

Techniques for ion implantation of molecular ions are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion implanter for implanting a target material with a molecular ion at a predetermined temperature to improve at least one of strain and amorphization of the target material, wherein the molecular ion is generated in-situ within an ion source.

8003957, Aug 23, 2011

Feb 9, 2009

12/367741

Craig R. Chaney - Rockport MA, US
Adolph R. Dori - Gloucester MA, US
Christopher R. Hatem - Salisbury MA, US
Alexander S. Perel - Danvers MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

G21K 5/10
H01J 37/08

25049221, 250282, 250423 F

To implant a carbon-containing species, a gas containing carbon is ionized in the ion chamber. The ionization of this gas will typically produce a number of ionized species. However, many of these resulting ionized species are not beneficial to the desired implant, as they contain only non-carbon atoms. These species must be eliminated before the implantation, leaving only carbon-based species. However, the current of the desired species may be low, thereby requiring extra energy or time to implant the desired dosage of carbon into a substrate. This can be improved through the use of a second gas. This second gas is used to dilute the primary carbon-containing gas to be ionized in the ion chamber. By incorporating this dilution gas, more of the resulting ionized species are beneficial to the carbon implantation.

8012843, Sep 6, 2011

Aug 5, 2010

12/851141

Christopher R. Hatem - Salisbury MA, US
Benjamin Colombeau - Salem MA, US
Thirumal Thanigaivelan - North Andover MA, US
Dennis Rodier - Francestown NH, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/331

438373, 438372, 438506, 438514, 438519

An improved method of performing pocket or halo implants is disclosed. The amount of damage and defects created by the halo implant degrades the performance of the semiconductor device, by increasing leakage current, decreasing the noise margin and increasing the minimum gate voltage. The halo or packet implant is performed at cold temperature, which decreases the damage caused to the crystalline structure and improves the amorphization of the crystal. The use of cold temperature also allows the use of lighter elements for the halo implant, such as boron or phosphorus.

8101528, Jan 24, 2012

Aug 4, 2010

12/850317

Christopher R. Hatem - Salisbury MA, US
Benjamin Colombeau - Salem MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/31

438766, 438302, 438369, 438480, 438505

A method of processing to a substrate while minimizing cost and manufacturing time is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at low temperatures, such as below 273 K. This low temperature implant reduces the structural damage caused by the impacting ions. Subsequently, the implanted substrate is activated using faster forms of annealing. By performing the implant at low temperatures, the damage to the substrate is reduced, thereby allowing a fast anneal to be used to activate the dopants, while eliminating the majority of the defects and damage. Fast annealing is less expensive than conventional furnace annealing, and can achieve higher throughput at lower costs.

8124506, Feb 28, 2012

Jul 31, 2009

12/533550

Christopher R. Hatem - Salisbury MA, US
Ludovic Godet - North Reading MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/04

438511, 438510

A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

8372735, Feb 12, 2013

Dec 19, 2008

12/339295

Christopher Hatem - Salisbury MA, US
Ludovic Godet - North Reading MA, US
Alexander Kontos - Lynn MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/26

438513, 257E21334

A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.